65 DIODE 1N Search Results

Contextual Info: 1N4756A asi SILICON ZENER DIODE DESCRIPTION: The 1N4756A is a Silicon Regulator Diode for General Purpose Voltage Control Applications. MAXIMUM RATINGS 200 mA If 47 Vz 1 .0 P diss V W @ TA = 50 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C CHARACTERISTICS

1N5709B

Abstract: "Varactor Diode"
Contextual Info: 1N5709B ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7 DESCRIPTION: The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose applications. MAXIMUM RATINGS IR 20 nA VR 70 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C

Contextual Info: 1N5148A asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

Contextual Info: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

varactor diode

Abstract: 1N5142
Contextual Info: 1N5142 TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C

1N5148A

Contextual Info: 1N5148A TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters

varactor 1N5148

Abstract: 1N5148 D0-204AA D0204
Contextual Info: 1N5148 TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The ASI 1N5148 is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C

O41 DIODE

Contextual Info: 1N5148A asii TUNING VARACTOR DIODE DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS 250 mA If Vr 60 V Pd i s s 400 mW @ Ta $ 25 0C Tj -65 0C to +175 °C Ts t g -65 0C to +200 0C

1N5147A

Contextual Info: 1N5147A asii TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5147A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Millimeters MAXIMUM RATINGS If 250 mA Vr 60 V Pd i s s 400 mW @ Ta = 25 0C Tj -65 °C to +175 0C Ts t g -65 0C to +200 0C

1N5140A

Abstract: microwave varactor diode
Contextual Info: 1N5140A TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D0-204AA The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters

1N5142A

Contextual Info: 1N5142A TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D0-204AA The ASI 1N5142A is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C

Contextual Info: 1N5147A TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5147A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters

CD laser pickup assembly

Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
Contextual Info: Numbering System • New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category 0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser Wavelength (63 : 635nm band, 65 : 650nm band, 78 : 780nm band etc.) Optical power output

1N4396

Abstract: diode 1n4396
Contextual Info: 1N4386 SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE DO- 4 The 1N4396 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS If 200 mA Vr 250 V Pd is s 20 W @ Te = 25 °C Tj -65 0C to +150 0C Ts t g -65 0C to +175 0C 0 jc 5.0 0C/W

Contextual Info: 1N5142 asii TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon Hyper­ Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS 250 mA If Vr 60 V Pd i s s 400 mW @ Ta = 25 °C Tj -65 0C to +175 0C Ts t g -65 0C to +200 0C

varactor multiplier

Abstract: 1N4387 varactor "Varactor Diode"
Contextual Info: 1N4387 SILICON MULTIPLIER VARACTOR DIODE PACKAGE STYLE DO- 4 DESCRIPTION: The 1N4387 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS IO 200 mA VR 150 V PDISS 20 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 5.0 C/W O O O O O

varactor multiplier

Abstract: 1N4388 varactor
Contextual Info: 1N4388 SILICON MULTIPLIER VARACTOR DIODE PACKAGE STYLE DO- 4 DESCRIPTION: The 1N4388 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS IF 200 mA VR 100 V PDISS 10 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 10 C/W O O O O O

1N4396

Abstract: 1N4386 varactor multiplier diode 1n4396
Contextual Info: 1N4386 SILICON MULTIPLIER VARACTOR DIODE PACKAGE STYLE DO- 4 DESCRIPTION: The 1N4396 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS IF 200 mA VR 250 V PDISS 20 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 5.0 C/W O O O O O

zener diode 1N4756a

Abstract: 1N4756A
Contextual Info: 1N4756A asii SILICON ZENER DIODE DESCRIPTION: The 1N4756A is a Silicon Regulator Diode for General Purpose Voltage Control Applications. MAXIMUM RATINGS If 200 mA Vz 47 V Pd i s s 1.0 W @ Ta $ 50 °C Tj -65 0C to +200 0C Ts t g -65 0C to +200 0C m in im u m

1N4387

Contextual Info: 1N4387 SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE DO- 4 The 1N4387 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS Io 200 mA Vr 150 V Pd i s s 20 W @ Te ! 25 0C Tj -65 0C to +150 0C Ts t g -65 0C to +175 0C 0jc 5.0 0C/W

Contextual Info: 1N4388 SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE DO- 4 The 1N4388 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS If 200 mA Vr 100 V Pd i s s 10 W @ Tc= 25 0C Tj -65 0C to +150 0C Ts t g -65 0C to +175 0C ö 10 0C/W jc

Contextual Info: 1N4387 asi SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D O - 4 The 1N4387 is a High Power Silicon Multiplier Varactor Diode. s Y M B L MAXIMUM RATINGS MIN. 150 V P diss 20 W @ T C= 2 5 °C Tj -65 °C t o +150 °C T stg -65 °C t o +175 °C

Contextual Info: 1N4386 asi SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D O - 4 The 1N 4396 is a High Power Silicon Multiplier Varactor Diode. s Y M B O L MAXIMUM RATINGS 10.28 0 250 6.35 Vr 250 V P diss 20 W @ Tc = 25 °C J Tj -65 °C to +150 °C T stg -65 °C to +175 °C

IN914

Contextual Info: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV 1N914 PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C