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    650 DIODE Search Results

    650 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    650 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STW23NM60ND

    Abstract: STB23NM60ND STF23NM60ND STI23NM60ND STP23NM60ND
    Text: STx23NM60ND N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh II Power MOSFET with fast diode D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND VDSS (@Tjmax) RDS(on) max 650 V 650 V 650 V 650 V 650 V


    Original     		PDF STx23NM60ND O-220, O-220FP, O-247 STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND STW23NM60ND STB23NM60ND STF23NM60ND STI23NM60ND STP23NM60ND

    25NM60ND

    Abstract: F25NM60ND
    Text: STP/F25NM60ND-STW25NM60ND STB25NM60ND-STI25NM60ND N-channel 600V - 0.13Ω - 21A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS @ TJMAX RDS(on) max 650 V 650 V 650 V 650 V 650 V < 0.16 Ω < 0.16 Ω


    Original     		PDF STP/F25NM60ND-STW25NM60ND STB25NM60ND-STI25NM60ND O-220/FP/D2PAK/I2PAK/TO-247 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND O-220 O-220FP 25NM60ND F25NM60ND

    11NM60N

    Abstract: No abstract text available
    Text: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A


    Original     		PDF STx11NM60N O-220, O-220FP, STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N O-220FP 11NM60N

    11NM60N

    Abstract: f11nm60n p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
    Text: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A


    Original     		PDF STx11NM60N O-220, O-220FP, STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N O-220FP 11NM60N f11nm60n p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N

    11NM60N

    Abstract: f11nm60n STF11NM60N p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STP11NM60N
    Text: STD11NM60N-1 - STB11NM60N/-1 STD11NM60N-STP11NM60N-STF11NM60N N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V


    Original     		PDF STD11NM60N-1 STB11NM60N/-1 STD11NM60N-STP11NM60N-STF11NM60N O-220 O-220FP- STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N 11NM60N f11nm60n STF11NM60N p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STP11NM60N

    21nm60n

    Abstract: F21NM60 f21nm60n 21nm60 21nm60nd 21nm6 STB21NM60ND STF21NM60ND STI21NM60ND STP21NM60ND
    Text: STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJmax RDS on max 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω


    Original     		PDF STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND O-220FP, O-220, O-247 STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND 21nm60n F21NM60 f21nm60n 21nm60 21nm60nd 21nm6 STB21NM60ND STF21NM60ND STI21NM60ND STP21NM60ND

    21nm60n

    Abstract: 21nm60 21nm60nd f21nm60n st marking STP MOSFET MARKING STP JESD97 STB21NM60ND STF21NM60ND STI21NM60ND
    Text: STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJmax RDS on max 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω


    Original     		PDF STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND O-220FP, O-220, O-247 STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND 21nm60n 21nm60 21nm60nd f21nm60n st marking STP MOSFET MARKING STP JESD97 STB21NM60ND STF21NM60ND STI21NM60ND

    ISD2520

    Abstract: STF22NM60 W22NM60 ST T4 0560 F22N STB22NM60 STB22NM60-1 STP22NM60 STW22NM60 STW22
    Text: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 650V @ Tjmax- 0.19Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh MOSFET ADVANCED DATA TYPE VDSS @Tjmax RDS(on) STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 650 V 650 V 650 V 650 V


    Original     		PDF STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 O-220/FP/D2PAK/I2PAK/TO-247 STP22NM60 STB22NM60 STB22NM60-1 ISD2520 STF22NM60 W22NM60 ST T4 0560 F22N STW22NM60 STW22

    t4 0560 equivalent

    Abstract: STW22NM60
    Text: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 650V @ Tjmax- 0.19Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh MOSFET ADVANCED DATA TYPE VDSS @Tjmax RDS(on) STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 650 V 650 V 650 V 650 V


    Original     		PDF STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 O-220/FP/D2PAK/I2PAK/TO-247 t4 0560 equivalent STW22NM60

    65083

    Abstract: DM8820 NE555 pulse generator opto-isolators bidirectional
    Text: Issued July 1988 F9085 High speed logic-logic opto-isolators Stock numbers 650-829, 650-835, 650-841, 650-857 These opto-isolators are the first family of truly logic compatible optically coupled interface gates. The family consists of four device types offering LSTTL


    Original     		PDF F9085 15Mbaud NE555 74OL6001 65083 DM8820 NE555 pulse generator opto-isolators bidirectional

    11NM60

    Abstract: STP11NM60FP 11A 650V MOSFET STB11NM60 STB11NM60-1 STP11NM60
    Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 650V@Tjmax 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS @ Tjmax STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω


    Original     		PDF STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 O-220/FP/D2PAK/I2PAK STP11NM60 STB11NM60 O-220 11NM60 STP11NM60FP 11A 650V MOSFET STB11NM60-1

    CF2-12V

    Abstract: dual latching relay ic circuit diagram of relay 8 pin cf2q-12v
    Text: CF NEW DUAL POWER AUTOMOTIVE RELAY 22.5 .886 22.5 .886 16.5 .650 16.5 .650 16.5 .650 CF-RELAYS Normally Normally Open Closed • 7 Amp Steady/30 Amp Inrush current capability • Simple footprint enables ease of PC board layout 16.5 .650 Coil 1 Common Standard type


    Original     		PDF Steady/30 CF2-12V dual latching relay ic circuit diagram of relay 8 pin cf2q-12v

    P8NM60

    Abstract: p8nm60fp d5nm60 p8n*m60fp STP8NM60FP TO252 STB8NM60 STD5NM60 STD5NM60-1 STP8NM60
    Text: STP8NM60 - STP8NM60FP STB8NM60 - STD5NM60 - STD5NM60-1 N-CHANNEL 650V@Tjmax-0.9Ω-8A TO-220/FP/D/IPAK/D²PAK STripFET II MOSFET Table 1: General Features TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 • ■ ■ ■ ■ VDSS 650 V 650 V 650 V 650 V


    Original     		PDF STP8NM60 STP8NM60FP STB8NM60 STD5NM60 STD5NM60-1 O-220/FP/D/IPAK/D STP8NM60 STD5NM60 P8NM60 p8nm60fp d5nm60 p8n*m60fp STP8NM60FP TO252 STD5NM60-1

    20nm60

    Abstract: W 20NM60 STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60
    Text: STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 650V @Tjmax - 0.25Ω -20A TO-220/FP/D2PAK/I2PAK MDmesh MOSFET TYPE VDSS @Tjmax STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 • ■ ■ ■ ■ 650 650 650 650 V V V V RDS(on) ID < 0.29 Ω < 0.29 Ω


    Original     		PDF STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 O-220/FP/D2PAK/I2PAK STP20NM60 STB20NM60 20nm60 W 20NM60 STB20NM60-1 STP20NM60FP

    Untitled

    Abstract: No abstract text available
    Text: CPW2-0650-S010B Silicon Carbide Schottky Diode Chip VRRM VRRM = = 650 650 VV Z-Rec Rectifier IF IF AVG = = 1010 AA Features • • • • • • • QcQ c = = 2525 nCnC Chip Outline 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery


    Original     		PDF CPW2-0650-S010B 650-Volt CPW2-0650-S010B

    Untitled

    Abstract: No abstract text available
    Text: STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS @Tjmax Type RDS(on) max ID 3 2 3 STB8NM60N 650 V < 0.65 Ω 7A STD8NM60N 650 V < 0.65 Ω 7A STD8NM60N-1 650 V < 0.65 Ω 7A STF8NM60N 650 V


    Original     		PDF STx8NM60N O-220, O-220FP, STB8NM60N STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N O-220

    F8NM60N

    Abstract: P8NM60N STB8NM60N stx8nm60n P8NM60 JESD97 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N
    Text: STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS @Tjmax Type RDS(on) max ID 3 2 1 3 STB8NM60N 650 V < 0.65 Ω 7A STD8NM60N 650 V < 0.65 Ω 7A STD8NM60N-1 650 V < 0.65 Ω 7A STF8NM60N 650 V


    Original     		PDF STx8NM60N O-220, O-220FP, STB8NM60N STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N O-220 O-220FP F8NM60N P8NM60N STB8NM60N stx8nm60n P8NM60 JESD97 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N

    Untitled

    Abstract: No abstract text available
    Text: CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM4-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor


    Original     		PDF CDM4-650 CDM4-650

    LC-LMD-650-06

    Abstract: No abstract text available
    Text: Laser Diodes Laser Module LC-LMD-650-06 650 nm Laser Module Features 1. APC auto power control IC inside 2. Low current consumption of the APC circuit 3. Superior laser beam profile Part No. Indications LC-LMD 650 06 XX A Output Power: 01- < 1 mW 03 - < 2 ~ 3 mW


    Original     		PDF LC-LMD-650-06 12/V5/IF/divers-opto/module/lc-lmd-650-06 LC-LMD-650-06

    D5NM6

    Abstract: p8nm60fp b8nm60 d5nm d5nm60 P8NM60 STB8NM60 STB8NM60T4 STD5NM60 STD5NM60-1
    Text: STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS on ID Pw STD5NM60 650 V <1Ω 5A 96 W 1 STD5NM60-1 650 V <1Ω 5A 96 W DPAK STB8NM60 650 V <1Ω 5A 100 W STP8NM60


    Original     		PDF STD5NM60 STB8NM60 STP8NM60 O-220, O-220FP, STD5NM60-1 STB8NM60 STP8NM60FP D5NM6 p8nm60fp b8nm60 d5nm d5nm60 P8NM60 STB8NM60T4 STD5NM60 STD5NM60-1

    Untitled

    Abstract: No abstract text available
    Text: CDM7-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 7.0 AMP, 650 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM7-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor


    Original     		PDF CDM7-650 CDM7-650

    Sanken rb60

    Abstract: rb40 rb60 RECTIFIER CTB34 CTUG3D marking WMM ctu22s CTU-12S CTB-34 fmlg12
    Text: SANKEN y ELECTRIC CO L T D 3 SE ,3> Fast Recovery Diodes Rating/ Characteristics Vrm V (A) Ifsm (A) Tj ("C) 1350 1350 250 450 650 150 250 450 650 250 450 650 250 450 650 150 250 450 650 1300 1300 200 400 600 100 200 400 600 200 400600 200 400 600 100 200


    OCR Scan     		PDF FMU-12S, FMU-14S, FMU-16S, CTB-34/34S/34M, CTB-33 CTB-34. MI-10/15 SFPB-64 Sanken rb60 rb40 rb60 RECTIFIER CTB34 CTUG3D marking WMM ctu22s CTU-12S CTB-34 fmlg12

    150a gto

    Abstract: b958 100P-160 tp102
    Text: SIE D • □□□3C 155 10Ö * S E K G Ö13bb71 s e MIKRDn SEMIKRON INC Vrsm Vrrm V Ifa v Fast Recovery Rectifier Diodes sin. 180; Tease ~ 85 °C 770 A " r - 0 3 - z ,3 SKN 650 F 800 SKN 650 F 08 1200 SKN 650 F 12 1400 SKN 650 F 14 1600 SKN 650 F 16 1800


    OCR Scan     		PDF 13bb71 2000Hz; /150J 150a gto b958 100P-160 tp102

    ctb-34

    Abstract: rb60 51 MARKING V1J fmlg12 333X ES01 ES01A ES01F ES01Z EU02
    Text: •1 3SE D SANKEN ELECTRIC CO LTD Fast Recovery Diodes E 3 7 ^ 0 7 4 1 GOOGÖDS 0 E 3SAKJ7^ 03" û I eVrh: 100~ 1500V Eio:0.5~ i.2A RH/ES/RS/RH/RU/EU V rm V Io Ifsm (A) (A) 450 650 850 250 450 650 1550 250 450 650 1600 650 850 — Ir |R(H) trr (M ) (//A )


    OCR Scan     		PDF Q0DG605 ES01Z ES01A MI-10/15 SFPB-64 ctb-34 rb60 51 MARKING V1J fmlg12 333X ES01 ES01F EU02