6508 STATIC Search Results

HM-6508-9

Abstract: 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508 HM-6508B-9
Contextual Info: HM-6508 TM 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Contextual Info: HM-6508/883 Semiconductor 102 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to M IL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

HM3-6508-9

Abstract: HM-6508-9 HM-6508 6508B9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508B-9 6508 RAM HM16508B-9
Contextual Info: HM-6508 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

6508 RAM

Contextual Info: HM-6508/883 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

6508 RAM

Abstract: HM-6508-9 HM3-6508-9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508 HM-6508B-9
Contextual Info: HM-6508 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

6508+(RAM)

Abstract: 6508
Contextual Info: Wiftsras HM-6508/883 1 0 2 4 x 1 C M O S RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

1024X1

Contextual Info: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

harris 6508

Contextual Info: HM-6508 HARRIS S E M I C O N D U C T O R 102 4x 1 CMOS RAM March 1997 Features Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high per­

harris 6508

Abstract: HM-6508
Contextual Info: HM-6508/883 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

Contextual Info: HM-6508/883 fS l H A R R I S S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and Is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

365089

Abstract: LA 6508
Contextual Info: HM-6508 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Description Features • Low Power Max • Low Power O p eratio n . 20mW/MHz Max • Fast Access Time. 180ns Max

Intersil 6508B

Abstract: HM-6508
Contextual Info: HM-6508/883 TM 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max

2MBI225U4N-120-50

Abstract: diode ITT itt 5-8 ED-4701 MT5F12959 2mbi225u4n trivalent RoHs compliant Chromate Specification trivalent RoHs compliant
Contextual Info: SPECIFICATION Device Name : IGBT MODULE RoHS compliant product Type Name Spec. No. : : Feb. 14 ’06 H.Kaneda Feb. 14 ’06 M.W atanabe T.Miyasaka K.Yamada 2MBI225U4N-120-50 MS5F 6508 MS5F6508 1 a 14 H04-004-07b R e v i s e d Date Classification Feb. -14 -’06

Contextual Info: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.

LA 6508

Abstract: HM-6508-9 HM-6508 HM-6508-5 HM-6508B-8 HM-6508B-9 HM-6508-8 6508-5 6508 ram
Contextual Info: ¡2 HARRIS HM-6508 1024 x 1 CMOS RAM Features P in o u t • • • • • • • • • TO P VIEW Low Standby P o w e Max. Low Operating P o w e r . 20m W /M H z Max.

Contextual Info: 3 J H A R R HM-6508 IS 1024 x 1 CMOS RAM Features • • • • • • • • • Pinout TOP VIEW Low Standby P o w e r. 50|iW Max. Low Operating P o w e W /M H z Max.

Contextual Info: a HM-6508 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 1 CM O S RAM August 1996 Features Description • Low Power S ta n d b y .50|iW Max • Low Power O p e ra tio n . 20m W /MHz Max •

Contextual Info: S HM-6508/883 HARRIS S E M I C O N D U C T O R 1024 X 1 CMOS RAM August 1996 Description Features • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. • Low Power S ta n d b y .50^W Max

Contextual Info: MCM6508 MCM6518 H , _ 1024 x 1 BIT STATIC RANDOM ACCESS MEMORY T he M C M 6508 and M C M 6518 are fu lly sta tic 1 02 4x 1 R A M s fabricated using CM O S silicon gate tec h n o lo g y . They o ffe r lo w p ow er o pe ratio n fro m a single + 5 V supp ly w ith data rete ntion to 2.0 V. The

im6508

Abstract: im6518 MC146805 6508 intersil HM6508 1024x1 MCM6508 MCM6508-25 MCM6518-25 ICM6518
Contextual Info: MCM6508 MCM6518 ''I -_ 1024 X 1 B IT S T A T IC R A N D O M A C C E S S M E M O R Y The M C M 6508 and M C M 6518 are fu lly s ta tic 1 0 2 4 x 1 R A M s fabricate d using CM O S silicon gate tech n o lo g y. They o ffe r lo w pow er ope ration fro m a single + 5 V supp ly w ith data rete ntio n to 2.0 V - T h e

CY7C1350B

Abstract: CY7C1329 CY7C1351B CY7C1352B CY7C1353B
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 99245 VERSION 3.0 December, 2000 4 Meg Synchronous SRAM R52D-3 Technology, Fab 4 CY7C1350B 128K x 36 Pipeline SRAM with NoBL Architecture CY7C1351B 128K x 36 Flow Through SRAM with NoBL™ Architecture

SCB-100

Abstract: PCI-6503 SH100-100-F 777778-01 CB-50LP SH100 SCB-100 8255 ISA PC-DIO-96 USB 8255 PXI-6508
Contextual Info: Digital I/O, 24 or 96 Lines, 5 V TTL/CMOS 24 or 96-Line Digital I/O NI 650x • 24 or 96 digital input/output lines • 5 V TTL/CMOS • 2-wire handshaking capability • Known power-up states • NI-DAQ driver simplifies configuration and measurements Operating Systems

777600-01

Abstract: 777779-01 CB-50LP 777601-01 SH68-68-D1 PCB MOUNTING CONNECTORS 777601-01 PCI-DIO-32HS TBX-68 776832-01 777778-01
Contextual Info: Digital I/O Accessories and Cables Digital I/O Accessories and Cables Accessory Selection Process Step 1. From Tables 1 through 3, locate the table with your digital I/O device. Step 3. Using the table from Step 1, determine the appropriate cable solution for your selected digital I/O device

CB-50LP

Abstract: SH100 SCB-100 PCI-DIO-96 SCB-100 777810-01 CB-50LP 6527 8255 ISA SH100-100-F SCXI 1163 185095-02
Contextual Info: 48-Bit Isolated Digital I/O 48-Bit Isolated Digital I/O NI 6527 • 24 optically isolated digital inputs 0-28 VDC • 24 isolated, solid-state relay digital outputs (0-60 VDC, 0-30 Vrms) • Switch up to 120 mA • Digital filtering on inputs • Messaging (change notification)