650V 10A Search Results

P12NK60

Contextual Info: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability

Contextual Info: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability

CEP1175

Abstract: CEF1175
Contextual Info: CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP1175 650V 1Ω 10A 10V CEB1175 650V 1Ω 10A 10V CEF1175 650V 1Ω 10A e 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability.

Contextual Info: Advance Technical Information IXYP10N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 10A 2.50V 23ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR

Mosfet

Abstract: SSF10N65
Contextual Info: SSF10N65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.9Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and

f11nm60

Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
Contextual Info: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V

F11NM60N

Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
Contextual Info: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V

p10nk60

Abstract: p10nk60z p10nk60zfp B10n STP10NK60ZFP
Contextual Info: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @T jMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V

p10nk60

Abstract: p10nk60zfp VDD-300 STP10NK60ZFP B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z
Contextual Info: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @TjMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V

P12NM60

Abstract: STP12NM60N
Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

P12NM60

Abstract: F12NM60N STF12NM60N
Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

P12NM60

Abstract: F12NM60N STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

Contextual Info: Advance Technical Information IXYP10N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 10A 2.5V 23ns CE Tab TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

F12NM60N

Abstract: STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

F10N65

Abstract: P10N65
Contextual Info: PJP10N65 / PJF10N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

Contextual Info: Advance Technical Information IXYP15N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 8A 2.5V 28ns OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information IXYP15N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Electrically Isolated Tab VCES = IC110 = VCE(sat)  tfi(typ) = 650V 9A 2.5V 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol

10N65F

Contextual Info: HY10N65T / HY10N65FT 650V / 10A 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS

SML25SCM650N2B

Contextual Info: SiC 650V N-CHANNEL MOSFET SML25SCM650N2B • 650V SiC MOSFET In A Hermetic SMD1 TO-276AB Package • Designed for High Temperature Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID IDM PD

10N65C

Contextual Info: Advance Technical Information IXYP10N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Electrically Isolated Tab VCES = IC110 = VCE(sat)  tfi(typ) = 650V 7A 2.6V 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions

Contextual Info: Preliminary Technical Information IXYA20N65C3 IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 20A 2.5V 28ns TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings

Infineon diffusion solder

Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
Contextual Info: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices

Contextual Info: Preliminary Technical Information IXYH50N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.10V 27ns TO-247AD Symbol Test Conditions Maximum Ratings

Contextual Info: APT45GR65B_SSCD10 APT45GR65BSCD10 APT45GR65SSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and