655U Search Results

FC FB mh

Contextual Info: JL R^kb^l 065:uC1 RmZg]Zk].ymJ/ FEASTQER 63 QZm^] phkdbg` ohemZ`^ kZg`^ ;38 mh 655U DC46;5 mh 9:5U DC Zm hi^kZmbhg m^fi^kZmnk^ kZg`^ 295 mh 065:uC427: mh 065:uC3 73 Sabl l^kb^l bl _hk \hffngb\Zmbhg ^jnbif^gml1 lpbm\abg` ihp^k lniier1 bg]nlmkbZe f^Zlnkbg` bglmknf^gml1 Znmhfhmbo^ ^e^\mkb\ ikh]n\ml1 ^m\3

LM 2536

Contextual Info: ;9=E/>0;9=E/>E 4FEA?AE<G8 C8>4I 9MJWXUMV , , , , , , MZq3 \hgmbghnl \nkk^gm :5B MZq3 fZdbg` \nkk^gm 755B Fqm^g]^] m^fi3 kZg`^ ni mh 67: Wbma ab`aer ^lmZ[ebla^] k^ebZ[bebmr Smkhg` k^lblmZg\^ Z[bebmr mh lah\d - ob[kZmbhg Nh \aZg`^ h_ lpbm\abg` lmZm^ o^klbhg Zm [k^Zd]hpg

129u

Abstract: 468m MDT*2010E 106U MDT2005E MDT2010E
Contextual Info: Date : 8-06-‘09 MDT2005E & MDT2010E JE 使用注意事項 由於 MDT2005E & MDT2010E(JE) 與 IB 版製程不同注意下列事項 : I. Power edge detector (PED)的功能，(@VDD=5V ,PED=ENABLE)啟動電位約在 1.9V~2.3V 左右 II. 使用 RC 振盪時，需調整 RC 值 .

EHP 16

Abstract: 65A0 IQM695561
Contextual Info: 42?+8 .>=979=5?1 ;16.A 2EBOPMEN U 95A lpbm\abg` \ZiZ[bebmr U TZkbhnl fhngmbg` m^kfbgZmbhgl ZoZbeZ[e^ U 6 Fhkf A /7q=<0 \hgmZ\m ZkkZg`^f^gm U PhHQ - EJT \hfiebZgm /4.;./=1;5<=5/< ChgmZ\m ZkkZg`^f^gm 6A Rri3? 95fT /Zm 65A0 ThemZ`^ ]khi /bgbmbZe0 KZq3? 7:5fT /Zm 65A0

LM 739 N

Abstract: lm 538 n A083 65A0 IQM695561 L6395 lm 538
Contextual Info: 75B- 1A@<:<@8B4 >491D 5IFSTQIR Y 95A lpbm\abg` \ZiZ[bebmr Y TZkbhnl fhngmbg` m^kfbgZmbhgl ZoZbeZ[e^ Y 6 Fhkf A - 6 Fhkf C \hgmZ\m ZkkZg`^f^gm Y UZla mb`am Zg] ]nlm ikhm^\m^] mri^l ZoZbeZ[e^ @VPKGFL 1PPLKGFSKONR Y PhHQ - EJT \hfiebZgm Fh` eZfi - a^Z]eb`am \hgmkhe1 P^Zk pbg]hp ]^_h``^k1

w636

Abstract: 7V65 7A17C OBP16 SA 537 7816A
Contextual Info: 6481~6481}@ /A@<:<@7B3 >39/D 4IFSTQIR Z Rn[fbgZmnk^ Znmhfhmbo^ k^eZr Z Spbg l^iZkZm^ lrlm^fl .Spbg o^klbhg/ Rbg`e^ Spbg Z Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ZoZbeZ[e^ .HFJC2S/ @WPKGFL /PPLKGFSKONR Z QhHR - EKU \hfiebZgm C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1

Contextual Info: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q

Contextual Info: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection;

EMT CONDUIT

Abstract: ul listed conduit E22132 651SUS crouse-hinds locknut 66-2U 650SUS 653u 666US emt conduit set screw connector
Contextual Info: 8-9.qxp 7/22/2010 1:05 PM Page 9 Thin Wall Conduit Fittings For EMT Conduit Compression Type Fittings - Made in the USA Connector – Non-Insulated MADE IN THE USA FITTINGS UL File No. E-22132 Applications: Made in the USA conduit fittings are used: EMT Fittings

LMM 2057

Abstract: TLC 7555 MBI 5066 samxon GR chn 809 LM 805 CV yx 805 3054 CHN 747 CHMC 46 CHN 932
Contextual Info: aJ}1E R^kb^l SZ[e^ O37 aJ3@s R^kb^l CaZkm O39 ,5M- Aiieb\Zmbhg Gnb]^ebg^l O3: aJ{z OZkm Mnf[^k Rrlm^f O369 {`aJbW SZiibg` Ri^\b_b\Zmbhgl O36: 1obW OZ\dbg` Ri^\b_b\Zmbhgl O36; K^Z] Fhkfbg` Ri^\b_b\Zmbhg O36< LbgbZmnk^ Sri^ O36= ymJ G^g^kZe Onkihl^ O387 =H>J

BJ 938

Abstract: LQH6c 7B339 MJN7
Contextual Info: 648: /A@<:<@7B3 >39/D 4IFSTQIR Z Roal[`af_ [YhYZadalq mh lg 75A Z Rap \a^^]j]fl [gflY[l YjjYf_]e]flk Z Tf]f[dgk]\ Yf\ hdYkla[ k]Yd]\ lqh]k YnYadYZd] Z QgHR - EKU [gehdaYfl @VPKGFL /PPLKGFSKONR C]fljYd \ggj dg[c1 Ogo]j \ggjk - oaf\gok1 Ka_`laf_1 ^dYk`da_`l - af\a[Ylgj dYeh [gfljgd1 Ifkljme]fl [gfljgd1

Samsung S3C4510

Abstract: S3C4520 IC Timer Cookbook S3C4520A LT 0934 as011 FM0 encoder verilog coding
Contextual Info: 22-S3-C4520A-032001 USER'S MANUAL S3C4520A 32-Bit RISC Microprocessor Revision 2 Product Overview Programmer′′s Model Instruction Set System Manager Unified Instruction/Data Cache HDLC Controller IOM2 Controller TSA Timer Slot Assigner DMA Controller

Contextual Info: 5370~5370}? .@?;9;?6A2 =28.C 3HERSPHQ Y Rn[fbgbZmnk^ Znmhfhmbo^ k^eZr Y Sa^ p^b`am bl hger 9` _hk lbg`e^ k^eZr Y Eqm^g]^] m^fi3 kZg`^ ni mh 65: Y Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ?VOJFEK .OOKJFERJNMQ ZoZbeZ[e^ .HFJC2S/ C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1

1291H

Abstract: ILM12
Contextual Info: H A RR IS S E M I C O N D SE CT OR S6E D HARRIS • 4 3 0 2 27 1 0 0 4 5 7 5 3 lbfl « H A S ¿IV SHififU, 2N 7298R 2N7298H u -, S E M IC O N D U C T O R REGISTRATION PENDING Currently Available as FRF450 D, R, H December 1992 R adiation Hardened N -C hannel Pow er M OSFETs

U638

Abstract: RRQ1
Contextual Info: 31;*| ;854/ ;<,<0 :05,@ 1DAOPMDN y Da]d][lja[ klj]f_l` 7:55U y KED klYlmk af\a[Ylgj y O`glg akgdYlagf y BahgdYj ljYfkaklgj gmlhml y Ojafl]\ [aj[mal ZgYj\ egmfl y Efnajgfe]flYd ^ja]f\dq hjg\m[l .QgHR [gehdaYfl/ 479=< .SY @ 7: /0;.:49<487 / Cgfljgd ngdlY_] jYf_]

104k capacitor

Abstract: .47k capacitor 47k capacitor MDT*2010E 470k capacitor 15p capacitor 610k A 115U mdt2010e mdt2005e
Contextual Info: Date : 8-06-‘09 Note for the JE version of MDT2005E & MDT2010E Please note the difference between version JE and IB for MDT2005E & MDT2010E: I. The action voltage of power edge detector PED is about 1.9V~2.3V while Vdd=5V. II. A capacitor (about 10~15pf) is built in for version JE. So, the RC values should

Contextual Info: h a r r is ^ S E M I C O N D U C T O R FRM450D, FRM450R, FRM45ÛH 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.6000 TO-204AA • Second Generation Rad Hard MOSFET Result» From New Design Concepts

2N7298D

Contextual Info: Œk H U U a r r is S E M I C O N D U C T O R 2N7298D, 2N7298R 2N72QQH REGISTRATION PENDING Currently Available as FRF450 D, R, H . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 9A, 500V, RDS(on) >0.6150 TO-254AA • Second Generation Rad Hard MOSFET Retults From New Design Concept*

omnix om-310

Abstract: G2M5477 telemetry block diagram LFM-70W RN-131G RN-131-DS almit RN-131C U3O-G2M5477 OM-310
Contextual Info: RN-131G & RN-131C www.rovingnetworks.com RN-131-DS v2.5 12/23/2009 WiFly GSX 802.11 b/g Wireless LAN Module Features • Qualified 2.4GHz IEEE 802.11b/g transceiver • High throughput, 1Mbps sustained data rate with TCP/IP and WPA2 • Ultra-low power - 4uA sleep, 40mA Rx,

MDT2010E

Abstract: mdt2005e 313u MDT*2010E 129u 614k 792mA 468m 106U 113u
Contextual Info: Date : 8-06-‘09 MDT2005E & MDT2010E JE 使用注意事项 由于 MDT2005E & MDT2010E(JE) 与 IB 版制程不同注意下列事项 : I. Power edge detector (PED)的功能，(@VDD=5V ,PED=ENABLE)激活电位约在 1.9V~2.3V 左右 II. 使用 RC 振荡时，需调整 RC 值 .

G2M5477

Abstract: omnix om-310 U30-G2M5477 RN-131G LFM-70W RN-131C adc 809 block diagram pin configuration RN-131-DS wifi RECEIVER CIRCUIT DIAGRAM almit lfm-70w
Contextual Info: RN-131G & RN-131C www.rovingnetworks.com RN-131-DS v2.6 10/5/2011 WiFly GSX 802.11 b/g Wireless LAN Module Features • Qualified 2.4GHz IEEE 802.11b/g transceiver  High throughput, 1Mbps sustained data rate with TCP/IP and WPA2  Ultra-low power - 4uA sleep, 40mA Rx,

Contextual Info: flJ h a r fr is U U S E M I C O N D U C T O R FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 9A.500V, RDS on = 0.61511 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

DFE252012R-H-2R2N

Abstract: EN07
Contextual Info: Datasheet Power Management LSI for Mobile Phone BD71801GWL General Description The BD71801GWL is an integrated Power Management LSI available in a small 80-pins 0.4mm-pitch 3.8mm-by3.8mm Wafer-level CSP package, which is designed to meet demands for space-constrained Smart phones.

Contextual Info: 5379 .@?;9;?6A2 =28.C 3HERSPHQ Y Roal[`af_ [YhYZadalq mh lg 75A Y Rap \a^^]j]fl [gflY[l YjjYf_]e]flk Y Tf]f[dgk]\ Yf\ hdYkla[ k]Yd]\ lqh]k YnYadYZd] Y QgHR - EKU [gehdaYfl ?UOJFEK .OOKJFERJNMQ C]fljYd \ggj dg[c1 Ogo]j \ggjk - oaf\gok1 Ka_`laf_1 ^dYk`da_`l - af\a[Ylgj dYeh [gfljgd1 Ifkljme]fl [gfljgd1