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Matra MHS HM3-65768BH-5
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Bristol Electronics	HM3-65768BH-5		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Matra MHS HM3-65768BM-5
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Bristol Electronics	HM3-65768BM-5		8		2	1 - 10 $2.8392 100 $2.8392 1000 $2.8392 10000 $2.8392	Buy Now
Spectrum Control 68BCN-1001FH Thin Film Resistors - SMD RESISTOR CHIP 1.0K*
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	68BCN-1001F*H	WAFL			484	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Spectrum Control 68BCN-49R9FH Thin Film Resistors - SMD 20X20 NICR BACK CONT, 49.9 OHM*
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	68BCN-49R9F*H	WAFL			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Spectrum Control 68BCN-3002BH Thin Film Resistors - SMD 20X20 NICR BACK CONT*
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	68BCN-3002B*H	WAFL			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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65768B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
hm65768 Abstract: No abstract text available Text: HM 65768B MATRA MHS 4 K x 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 × 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip	Original	PDF	65768B 65768B hm65768
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	PDF	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
TEMIC K153P Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2	Original	PDF	WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
P-Channel Depletion-Mode Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545 Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385	Original	PDF	2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Untitled Abstract: No abstract text available Text: M il DATA SHEET_ HM 65768B 4 Kx4 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME	OCR Scan	PDF	65768B 65768B 65768B/Rev
TELIC Abstract: hm 65728b Text: HM 65768B BURN-IN SCHEMATICS F4W VW — \| 1 F 5 - y \W — 2 20 - VCC F6—v \W — 3 18 —A W — R1- 19 - A W — R1- F 7 -M W — 4 17 —A W — R1- F 8 -A W — 5 16 - A W — R1- F9- t A W - i 6 15 - A W — RHR2-	OCR Scan	PDF	F10-AWâ F11-AWâ R2-F12 R2-F13 R2-F15 300Qperrow 25KHzÂ 65768B option50 65787/RSV TELIC hm 65728b
s6T making Abstract: HM65768 Text: Tem ic HM 65768B MATRA MHS 4 K X 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip	OCR Scan	PDF	65768b 20pins -S0j20pins Sflbfl45tj s6T making HM65768
Untitled Abstract: No abstract text available Text: mw March 1994 DATA SHEET_ HM 65768B 4 Kx4 HIGH SPEED CMOS SRAM FEATURES • FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) . LOW POWER CONSUMPTION ACTIVE: 200 mW(typ) STANDBY : 35 mW (typ) . WIDE TEMPERATURE RANGE :	OCR Scan	PDF	65768B 65768B/Rev
Untitled Abstract: No abstract text available Text: Tem ic HM 65768B MATRA MHS 4 K X 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip	OCR Scan	PDF	65768B 65768B 0G05420
Untitled Abstract: No abstract text available Text: T em ic HM 65768B Semi co n du ct o rs 4 K x 4 High Speed CMOS SRAM Short description. P lease refer to the full datasheet for detailed technical inform ation. Introduction T he H M 65768B is a high speed C M O S static RA M organized as 4096 x 4 bits. It is m anufactured using	OCR Scan	PDF	65768B 65768B n97tgB
PDIL20 Abstract: e6210 Text: Temic S e m i c o n d u c t o r s Memories EEPROM Devices Funcdon Part Number Key Features Package e6210 64-bit serial EEPROM ' Ultra low current consumption 1 2-V operation for reading e6220 64-bit low-voltaee serial EEPROM • 2.5-V operation for program	OCR Scan	PDF	e6210 64-bit e6220 HM65767Bx-5 HM65767BX-2 HM65768BX-5 65768Bx-2 HM65728B HM65789X-5 PDIL20