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    6680 MOSFET Search Results

    6680 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    6680 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CBVK741B019

    Abstract: F63TNR FDD6030BL FDD6680
    Contextual Info: FDD6030BL N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for


    Original     		FDD6030BL O-252 CBVK741B019 F63TNR FDD6030BL FDD6680 PDF

    6680

    Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6630A FDD6680 FZ9935
    Contextual Info: FDD6630A N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDD6630A O-252 6680 d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6630A FDD6680 FZ9935 PDF

    TO-252 N-channel MOSFET

    Contextual Info: FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 26 A, 100 V.


    Original     		FDD3680 TO-252 N-channel MOSFET PDF

    FDD6680

    Abstract: CBVK741B019 F63TNR FDD5670 FDD marking
    Contextual Info: FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge.


    Original     		FDD5670 FDD6680 CBVK741B019 F63TNR FDD5670 FDD marking PDF

    Mosfet FDD

    Abstract: 6680 MOSFET TO-252 fairchild CBVK741B019 F63TNR FDD5612 FDD6680 marking 300 to252 C1 MARKING TO-252
    Contextual Info: FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 19 A, 60 V. RDS ON = 0.055 Ω @ VGS = 10 V


    Original     		FDD5612 Mosfet FDD 6680 MOSFET TO-252 fairchild CBVK741B019 F63TNR FDD5612 FDD6680 marking 300 to252 C1 MARKING TO-252 PDF

    Contextual Info: FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 26 A, 100 V.


    Original     		FDD3680 PDF

    Contextual Info: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		MTD3055V MTD3055V* PDF

    Contextual Info: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		MTD2955V MTD2955V* PDF

    34A-100

    Abstract: CBVK741B019 F63TNR FDD3670 FDD6680 A1626
    Contextual Info: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V.


    Original     		FDD3670 34A-100 CBVK741B019 F63TNR FDD3670 FDD6680 A1626 PDF

    fdd2670

    Contextual Info: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 0.125 Ω @ VGS = 10 V


    Original     		FDD2670 fdd2670 PDF

    MTD2955

    Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
    Contextual Info: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		MTD2955V MTD2955 CBVK741B019 F63TNR FDD6680 MTD2955V PDF

    Mosfet FDD

    Abstract: ON 534 TO252 fdd 690
    Contextual Info: FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDD6644/FDU6644 O-251AA) O-252 O-252) O-252 30TYP Mosfet FDD ON 534 TO252 fdd 690 PDF

    Contextual Info: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		IRFR9024 IRFR9024* PDF

    Mosfet FDD

    Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
    Contextual Info: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		MTD3055V Mosfet FDD CBVK741B019 F63TNR FDD6680 MTD3055V PDF

    a9hv

    Contextual Info: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		MTD2955V a9hv PDF

    CBVK741B019

    Abstract: F63TNR FDD2670 FDD6680
    Contextual Info: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V


    Original     		FDD2670 CBVK741B019 F63TNR FDD2670 FDD6680 PDF

    CBVK741B019

    Abstract: F63TNR FDD5690 FDD6680 Mosfet FDD
    Contextual Info: FDD5690 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge 23nC typical .


    Original     		FDD5690 CBVK741B019 F63TNR FDD5690 FDD6680 Mosfet FDD PDF

    Contextual Info: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDD6630A O-252 PDF

    FDD5614P

    Contextual Info: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 95 mΩ @ VGS = –10 V


    Original     		FDD5614P O-252 FDD5614P PDF

    Contextual Info: FDD6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDD6692 O-252 PDF

    M3247

    Abstract: dpak DIODE
    Contextual Info: FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDD6530A O-252 M3247 dpak DIODE PDF

    CBVK741B019

    Abstract: F63TNR FDD6612A FDD6680 TO-252 fairchild
    Contextual Info: FDD6612A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		FDD6612A O-252 CBVK741B019 F63TNR FDD6612A FDD6680 TO-252 fairchild PDF

    CBVK741B019

    Abstract: F63TNR FDD6676 FDD6680
    Contextual Info: FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDD6676 O-252 CBVK741B019 F63TNR FDD6676 FDD6680 PDF

    CBVK741B019

    Abstract: F63TNR FDD6644 FDD6680
    Contextual Info: FDD6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDD6644 O-252 CBVK741B019 F63TNR FDD6644 FDD6680 PDF