6790 PF 27 Search Results

Contextual Info: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010JFLL 600V 47A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

IBGT

Abstract: 100V 100A Mosfet DIODE PN junction diode DIODE 6790 MOSFET 50V 100A
Contextual Info: XI’AN IR-PERI Company .2#6 7 PRELIMINARY ]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK Features • • • • • • ! Advanced Process Technology Ultra Low On-Resistance #  Dynamic dv/dt Rating 175 C Operating Temperature o Fast Switching VDSS=100V

Contextual Info: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

PWSN0008DC-A

Abstract: RJK0206DPA
Contextual Info: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

RJK0206DPA

Contextual Info: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

1548C

Abstract: APT6010B2FLL APT6010LFLL
Contextual Info: APT6010B2FLL APT6010LFLL 600V 54A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Diode 188

Contextual Info: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

ZX95-6840C

Contextual Info: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ZX95-6840C+ 6740 to 6840 MHz Features • Frequency based on multiplication of Carrier Frequency • Low Phase Noise • Low Pushing • Low Pulling • 5V Tuning Voltage range • Protected by US patent 6,790,049

APT-6010

Contextual Info: APT6010B2FLL APT6010LFLL 600V 54A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ROS-6840C-119+ 6740 to 6840 MHz Features • frequency based on multiplication of carrier frequency • low phase noise • low pushing • low pulling • 5V tuning voltage range • aqueous washable

Contextual Info: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ZX95-6840C+ 6740 to 6840 MHz Features • Frequency based on multiplication of carrier frequency • Low phase noise • Low pushing • Low pulling • 5V tuning voltage range • Protected by US patent 6,790,049

ROS-6840C-119

Abstract: MCL 10138
Contextual Info: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ROS-6840C-119+ 6740 to 6840 MHz Features • Frequency based on multiplication of Carrier Frequency • Low Phase Noise • Low Pushing • Low Pulling • 5V Tuning Voltage range • Aqueous washable

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

2n0605

Abstract: d 132 smd code diode INFINEON PART MARKING Q67040-S4245 2N060 INFINEON PART MARKING to263 TRANSISTOR SMD MARKING CODE ag ANPS071E SPB80N06S2-05 SPP80N06S2-05
Contextual Info: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.8 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated

2n0605

Contextual Info: SPP80N06S2-05 SPB80N06S2-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
175°C operating temperature P- TO263 -3-2
Avalanche rated V 4.8 m
80 A P- TO220 -3-1
dv/dt rated Type SPP80N06S2-05

6790

Abstract: TO274 IRFPS3810 TO-274
Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

2n0605

Abstract: BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking
Contextual Info: SPP80N06S2-05 SPB80N06S2-05 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code