680UM Search Results

Contextual Info: Data Sheet PT7C5509 series Crystal Oscillator Module ICs |

Contextual Info: epitex Φ5 MOLD LED LAMP L850-09LH Opto-Device & Custom LED L850-09LH LN850-09LH Oval type Infrared LED L850-09LH is composed of rectangular AlGaAs die and is mounted on a lead frame with a clear oval type epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 850nm.

Contextual Info: Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size

839 DIODE

Abstract: PIN PHOTO DIODE OPD0606 068mm DIODE 839
Contextual Info: Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure unit : ㎛ 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size

L850-06LH

Abstract: 850nm
Contextual Info: epitex Φ5 MOLD LED LAMP L850-06LH Opto-Device & Custom LED L850-06LH LN850-06LH Infrared LED Lamp L850-06LH is composed of rectangular AlGaAs die and is mounted on a lead frame with a clear unspherical epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 850nm.

Contextual Info: Data Sheet PT7C5009 series |

Contextual Info: Preliminary Data Sheet PT7C5009 series |