682 SOT23 MARKING Search Results

Contextual Info: Product specification Philips Semiconductors PNP switching transistors BSR15; BSR16 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Medium power switcning. DESCRIPTION

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

UCD224

Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
Contextual Info: GOEHOST Philips Sem iconductors E33 IAPX N-channel silicon field-effect transistors N a piE R Prelim inary specification PM B FJ308/309/310 P H IL IP S /D IS C R E T E b7E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

Contextual Info: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking 109

Contextual Info: NCP584 Tri−Mode 200 mA CMOS LDO Regulator with Enable The NCP584 series of low drop out regulators are designed for portable battery powered applications which require precise output voltage accuracy, low supply current, and high ripple rejection. These devices feature an enable function which lowers current

Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

ZXTP19060CFF

Abstract: ZXTN19060CFF ZXTN19060CFFTA
Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

ZXTN19060CFF

Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

BC848

Abstract: BC847
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

SOT23 MARKING ZWA

Contextual Info: B U R R -B R O W N OPA682 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable FEATURES APPLICATIONS • • • • • • • • BROADBAND VIDEO LINE DRIVERS • VIDEO MULTIPLEXERS • MULTIPLE LINE VIDEO DA INTERNALLY FIXED GAIN +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

transistor MARKING NC KRC

Abstract: OPA2680 OPA2681 OPA2682 OPA3680 OPA3681 OPA3682 OPA680 OPA681 OPA682
Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN: +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA

Contextual Info: OPA682 OPA 682 OPA 682 OPA6 82 Wideband, Fixed Gain BUFFER AMPLIFIER With Disable TM FEATURES ● ● ● ● ● ● ● ● APPLICATIONS INTERNALLY FIXED GAIN: +2 OR ±1 HIGH BANDWIDTH G = +2 : 240MHz LOW SUPPLY CURRENT: 6mA LOW DISABLED CURRENT: 320µA

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
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TLV2252AQPWREP

Contextual Info: TLV225xĆEP, TLV225xAĆEP Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER OPERATIONAL AMPLIFIERS ą SGLS217A − NOVEMBER 2003 − REVISED MARCH 2004 D Controlled Baseline D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of

TLC2252A-EP

Contextual Info: TLC225xĆEP, TLC225xAĆEP Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER OPERATIONAL AMPLIFIERS ą SGLS216 − NOVEMBER 2003 D Controlled Baseline D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C

Contextual Info: TLC225xĆEP, TLC225xAĆEP Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER OPERATIONAL AMPLIFIERS ą SGLS216 − NOVEMBER 2003 D Controlled Baseline D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C