6A, 100V FAST RECOVERY DIODE Search Results

K02N120

Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

K02N120

Abstract: fast recovery diode 2a trr 200ns
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

K02N120

Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation  Short circuit withstand time – 10 s

Harris 721

Abstract: RURM1610CC RURM1615CC RURM1620CC
Contextual Info: HA RR IS S E M I C Q N D S E C T O R HARRIS S E M I C O N D U C T O R bflE D 4 3 Ü2 27 1 QOJaOHflQ STS • H A S RURM1610CC RURM1615CC, RURM1620CC 16A ,100V - 200V Ultrafast Dual Diodes December 1993 Package Features • ■ JEDEC T 0 -2 0 4 A A BOTTOM VIEW

Contextual Info: 1N3879 R THRU 1N3883(R) DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-400 Volts Types Up to 400V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175

Contextual Info: FR6A R 02 THRU FR6J(R)02 DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-600 Volts Types Up to 600V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175

K02N120

Abstract: fast recovery diode 1a trr 200ns
Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:

K02N120

Abstract: k02n12 SKP02N120
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

Contextual Info: FR6A R 05 THRU FR6M(R)05 DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-1000 Volts Types Up to 1000V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175

1BH62

Abstract: IS1835 1DH62 30JG11 0R06YXZ31 1n61a1 25FXF12 1GH62 toshiba 6jg11 1JH62
Contextual Info: p p 9097250 Q 1 » TOSHIBA | N' \ v ^ DDDHEm <DI S C R E TE /O P TO f STANDARD RECTIFIERS _ M D T -O f- 0 / 39C 0 2 2 1 4 p .io ~ p .24_ ~ _ Average Forward Current —» Peak Reverse Voltage 1A 1.2A 1.5A 100V S5277B 1S1885

SKP02N120

Abstract: 15v 60w smps smps 10w 5V SKB02N120
Contextual Info: SKP02N120 Preliminary SKB02N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter

Q67040-S4279

Abstract: FAST RECOVERY DIODE 200ns SKB02N120 FAST RECOVERY DIODE 200ns 2a 15v 60w smps SKP02N120
Contextual Info: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

k02n120

Abstract: PG-TO-263-3-2 SKB02N120 k02n12
Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,

Contextual Info: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation  Short circuit withstand time – 10 s

k02n120

Abstract: 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

1200V

Abstract: P-TO220-3-45 K02N120
Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

UES1303

Abstract: UESI301 6A, 100v fast recovery diode
Contextual Info: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 LIES1303 BYV28-150 High Efficiency, 3.5A DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are required. FEATURES

IC 7805

Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Contextual Info: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)

Q67040-S4340

Abstract: SKA06N60
Contextual Info: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

FAST RECOVERY DIODE 200ns 8A 40V

Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

Contextual Info: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are