6A 700V MOSFET Search Results

STP7NC70ZFP

Abstract: 7NC70Z STB7NC70Z STB7NC70Z-1 STP7NC70Z
Contextual Info: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A TYPICAL RDS(on) = 1.1Ω

ea211

Contextual Info: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.1Ω

7NC70Z

Abstract: MOSFET 7A 700V TO 220 STP7NC70ZFP MOSFET 50V 100A TO-220
Contextual Info: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.1Ω

7NC70Z

Abstract: 7NC70 STB7NC70Z STB7NC70Z-1 STP7NC70Z STP7NC70ZFP EP 0520
Contextual Info: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A 3 1 TYPICAL RDS(on) = 1.1Ω

7NC70Z

Abstract: MOSFET 700V TO 220 L9 Zener STB7NC70Z-1 STP7NC70Z STP7NC70ZFP
Contextual Info: STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z-1 700V < 1.38Ω 6A TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE

2SK2333

Abstract: 2SK2333 equivalent F6F70HVX2 6A 700V mosfet
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2333

Abstract: F6F70HVX2 DIODE 240v 3a 6A 700V mosfet
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

AP2761I-H-HF

Contextual Info: AP2761I-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 700V RDS ON 1.3Ω ID ▼ Simple Drive Requirement 6A G ▼ RoHS Compliant S Description

AP2761

Contextual Info: AP2761I-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 700V RDS ON 1.3Ω ID ▼ Simple Drive Requirement 6A G ▼ RoHS Compliant S Description

2SK2333

Abstract: F6F70HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

Contextual Info: AP2761I-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic BVDSS 700V RDS ON 1.3 ID Simple Drive Requirement 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for

Contextual Info: SSD06N70SL 6A , 700V , RDS ON 1.7Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252 DESCRIPTION The SSD06N70SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Contextual Info: AP2761I-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic BVDSS 700V RDS ON 1.3 ID Simple Drive Requirement 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for

Contextual Info: ICE6N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: SEMICONDUCTOR KF6N70F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C O F A FEATURES K ・VDSS=700V, ID=6A ・Drain-Source ON Resistance : L M R J RDS ON (Max)=1.65Ω @VGS=10V ・Qg(typ.)= 19nC D N N H SYMBOL RATING UNIT Drain-Source Voltage

Contextual Info: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply

NTE2976

Abstract: DIODE 240v 3a mosfet for dc to ac inverter
Contextual Info: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply

Contextual Info: SSW/I6N70A Advanced Power MOSFET FEATURES BVdss = 700 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA M ax. @ Vos = 700V

SSP6N70

Abstract: ssp6n70a
Contextual Info: SSP6N70A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA Max. @ VOS= 700V ^DS(on) = 1 .8 & < CO II _o • ■

6A 700V mosfet

Abstract: 1552Q diode SM 6A
Contextual Info: SSW/I6N70A A d v a n c e d Power MOSFET FEATURES BVDSs ~ 700 V ^DS on = • Lower Input Capacitance _D ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V 1.8 Q < Rugged Gate Oxide Technology II

SSH6N70A

Contextual Info: Advanced SSH6N70A Power MOSFET FEATURES B^D SS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 700V H Low Rds(0n) ■ "I -552 £1 (Typ.)

Contextual Info: Advanced SSH6N70A Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V B Low Rds(0n) ■ "I -552 £1 (Typ.) CD Rugged Gate Oxide Technology

Contextual Info: SSH6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 £2 < CD Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (M ax) @ Low Rdsjon) •*1-552 £2 (Typ.)

SSF6N70A

Contextual Info: SSF6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 Q < Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (Max.) @ VDS= 700V Low RDS(on) : 1-552 ft (Typ.)