6E SOT23 Search Results

si2333dds

Abstract: si2333dd SI2333DDS-T1-GE3
Contextual Info: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V

Contextual Info: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V

si2329

Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

mar 835 mosfet

Abstract: sot-23 MARKING CODE 41B Si2399 Si2399DS
Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

SI2329DS-T1-GE3

Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

si2329

Abstract: SI2329DS
Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

sot-23 MARKING CODE 41B

Abstract: mar 835 mosfet Si2399 SI2399DS
Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

2N5460

Abstract: 5461 2N5461 2N5462 CBVK741B019 MMBF5460 MMBF5461 PN2222N
Contextual Info: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

transistor 2N5461

Abstract: 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N
Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

Contextual Info: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

Contextual Info: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

BC817

Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 PAR TM AR KIN G DETAILS: C O M P L EM EN T A R Y TYPES: FMMTA92 FMMTA93 O_ - FMM TA92 FMM TA93 FMM TA92R FM M TA93R - 4E - 2E - 8E - 6E - FM M TA92 - FMM TA42 - FM M TA93 - FMMTA43

2N5460

Abstract: 7-segment+4+digit+5461
Contextual Info: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

MMBF5462

Abstract: 2N5460 2N5461 2N5462 CBVK741B019 MMBF5460 MMBF5461 LA 5461
Contextual Info: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

2N5461

Abstract: 5461 AS MMBF5462 61V
Contextual Info: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

Si2323CDS

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

2n5461

Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
Contextual Info: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch