IF100A
Abstract: IF100A-di 6kv power diode 7272 igbt module power diode 200A QRD3310001 100a pulse diode IGBT Power Module DIODE 6kv
Text: QRD3310001 Dual Fast Diode Module 100A 3300V Per Switch Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Description: Powerex Dual Common Emitter IGBT Power Module features two common emitter IGBT’s. Features: • Two Diodes • 6KV Isolated Mounting
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QRD3310001
-200A/
IF100A
IF100A-di
6kv power diode
7272
igbt module
power diode 200A
QRD3310001
100a pulse diode
IGBT Power Module
DIODE 6kv
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7272
Abstract: igbt module QRD3310002 IF100A powerex diode module material dt200a DIODE 6kv
Text: QRD3310002 Dual Fast Diode Module 100A 3300V Per Switch Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Description: Powerex Dual Common Emitter IGBT Power Module features two common emitter IGBT’s. Features: • Two Diodes • 6KV Isolated Mounting
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QRD3310002
-200A/
7272
igbt module
QRD3310002
IF100A
powerex diode module material
dt200a
DIODE 6kv
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60WX2
Abstract: ultravolt AA
Text: TABLE OF CONTENTS SINGLE OUTPUT HIGH VOLTAGE POWER SUPPLIES STANDARD AA Series Reduced-size product line with enhanced features . . . . . . . . . . . . . . . . . . . . . . . . . .4 High-voltage bias from 0 to 62V through 0 to 6kV @ 0 to 4W, 20W & 30W A Series
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schematic thyristor based inverter
Abstract: HIGH VOLTAGE DIODE 6kv Thyristor 6kV GTO MODULE mitsubishi inverter fr schematic power GCT Thyristor 6kV 500a gct thyristor GTO thyristor 4500V 4000A DIODE 6kv
Text: A 6KV/5KA REVERSE CONDUCTING GCT Y. Yamaguchi*, K. Oota*, K. Kurachi*, F. Tokunoh*, H. Yamaguchi*, H. Iwamoto*, J. Donlon*, E. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan
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FG6000AU
-120DA
6000AX
-120DS
R5000AX
schematic thyristor based inverter
HIGH VOLTAGE DIODE 6kv
Thyristor 6kV
GTO MODULE
mitsubishi inverter fr schematic
power GCT
Thyristor 6kV 500a
gct thyristor
GTO thyristor 4500V 4000A
DIODE 6kv
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Untitled
Abstract: No abstract text available
Text: JT-V Surge withstand voltage: 6kV 1a/1c 30A power relays PCB type JT-V RELAYS FEATURES TYPICAL APPLICATIONS • Surge withstand voltage: 6,000 V • High switching capacity — 30 A for 1 Form A • 2 contact arrangements — 1 Form A or 1 Form C • “TMP” types available
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E43028
290212J
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24V 30A PCB RELAY
Abstract: coil 28v dc JTV1AS-PA-12V relay 24v 30a JTV1G-PA-12V JTV1G-PA-18V JTV1G-PA-24V JTV1G-PA-48V JTV1G-TMP-12V JTV1G-TMP-18V
Text: JT-V Surge withstand voltage: 6kV 1a/1c 30A power relays PCB type JT-V RELAYS FEATURES TYPICAL APPLICATIONS • Surge withstand voltage: 6,000 V • High switching capacity — 30 A for 1 Form A • 2 contact arrangements — 1 Form A or 1 Form C • “TMP” types available
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E43028
24V 30A PCB RELAY
coil 28v dc
JTV1AS-PA-12V
relay 24v 30a
JTV1G-PA-12V
JTV1G-PA-18V
JTV1G-PA-24V
JTV1G-PA-48V
JTV1G-TMP-12V
JTV1G-TMP-18V
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JTV1AS-PA-12V
Abstract: JTV1S-TMP-24V
Text: JT-V Surge withstand voltage: 6kV 1a/1c 30A power relays PCB type JT-V RELAYS FEATURES TYPICAL APPLICATIONS • Surge withstand voltage: 6,000 V • High switching capacity — 30 A for 1 Form A • 2 contact arrangements — 1 Form A or 1 Form C • “TMP” types available
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E43028
ASCTB188E
201202-T
JTV1AS-PA-12V
JTV1S-TMP-24V
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ULTVSJJ5VCESGP
Abstract: diode t25 4 A8 DIODE T25 4 diode T25-4
Text: CHENMKO ENTERPRISE CO.,LTD Ultra Low Capacitance ESD Protection Array VOLTAGE 5 V Features ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces. The ULTVSJJ5VCESGP has been specifically designed to protect sensitive
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100ns
ULTVSJJ5VCESGP
diode t25 4 A8
DIODE T25 4
diode T25-4
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CSRV065V0P RoHs Device Features SC70-6L SOT-363 ESD Protect for 4 high-speed I/O channels. 0.084(2.10) 0.076(1.90) IEC61000-4-2 (ESD)±14kV(Contact),±18kV(Air). IEC61000-4-4 (FET)20A for I/O,80A for Power. 0.054(1.35)
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CSRV065V0P
SC70-6L
OT-363)
IEC61000-4-2
IEC61000-4-4
MIL-STD-750
CSRV065V0P)
100ns
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Untitled
Abstract: No abstract text available
Text: Low Capacitance ESD Protection Array SMD Diodes Specialist CSRS065V0P RoHs Device Features ESD Protect for 4 high-speed I/O channels. SOT-23-6 IEC61000-4-2 ESD ±14kV(Contact),±18kV(Air). IEC61000-4-4 (FET)20A for I/O,80A for Power. 0.119(3.02) 0.111(2.82)
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CSRS065V0P
OT-23-6
IEC61000-4-2
IEC61000-4-4
OT-23-6
MIL-STD-750
QW-BP018
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CSRS065V0P RoHs Device Features ESD Protect for 4 high-speed I/O channels. SOT-23-6 IEC61000-4-2 ESD ±14kV(Contact),±18kV(Air). IEC61000-4-4 (FET)20A for I/O,80A for Power. 0.119(3.02) 0.111(2.82) Working voltage: 5V
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CSRS065V0P
OT-23-6
IEC61000-4-2
IEC61000-4-4
OT-23-6
MIL-STD-750
QW-BP018
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DIODE T25 4
Abstract: DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
Text: AZC299-02R Low Capacitance High ESD Level Protection Array For High Speed I/O Port Features Description ESD Protect for 2 high-speed I/O lines and one VDD line z Provide ESD protection for each line to AZC299-02R is a design which includes ESD rated diode arrays to protect high speed data
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AZC299-02R
5/50ns)
DIODE T25 4
DIODE T25-4
DIODE T25
DIODE T25 4 C
DIODE T25-4-I6
DIODE T25-4-B4
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Untitled
Abstract: No abstract text available
Text: AZC299-02S Low Capacitance High ESD Level Protection Array For High Speed I/O Port Features Description ESD Protect for 2 high-speed I/O lines and one VDD line z Provide ESD protection for each line to AZC299-02S is a design which includes ESD rated diode arrays to protect high speed data
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AZC299-02S
5/50ns)
C29XY
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Untitled
Abstract: No abstract text available
Text: Contents Glossary Chart Previous Overvoltage / Suppression Protection Te l e c o m m u n i c a t i o n s P r o d u c t C a t a l o g Transient Voltage Suppression SP72X Series SCR/Diode Arrays Glossary The SP72X family of diode arrays are Features designed to withstand extreme ESD
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SP72X
SP720
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ComChip Date code
Abstract: CSRV065V0P SC-70-6L SC70-6L marking 6l 23C05 smd code marking sot363 smd DIODE code marking 20A IEC61000-4-4 smd 5 pin marking
Text: Low Capacitance ESD Protection Array SMD Diodes Specialist CSRV065V0P RoHs Device Features SC70-6L SOT-363 ESD Protect for 4 high-speed I/O channels. IEC61000-4-2 (ESD)±14kV(Contact),±18kV(Air). 0.087(2.20) 0.079(2.00) IEC61000-4-4 (FET)20A for I/O,80A for Power.
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CSRV065V0P
SC70-6L
OT-363)
IEC61000-4-2
IEC61000-4-4
MIL-STD-750
QW-BP010
ComChip Date code
CSRV065V0P
SC-70-6L
marking 6l
23C05
smd code marking sot363
smd DIODE code marking 20A
IEC61000-4-4
smd 5 pin marking
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Untitled
Abstract: No abstract text available
Text: Low Capacitance ESD Protection Array SMD Diodes Specialist CSRS065V0P RoHS Device Features ESD Protect for 4 high-speed I/O channels. IEC61000-4-2 (ESD)±14kV(Contact),±18kV(Air). IEC61000-4-4 (FET)20A for I/O,80A for Power. SOT-23-6 Working voltage: 5V
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CSRS065V0P
IEC61000-4-2
IEC61000-4-4
OT-23-6
OT-23-6
MIL-STD-750
QW-BP018
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sot-23-6 marking c05
Abstract: SMD MARKING CODE 302 smd sot 323 diode code 14 smd DIODE code marking 20A IEC61000-4-4
Text: Low Capacitance ESD Protection Array SMD Diodes Specialist CSRS065V0P RoHS Device Features ESD Protect for 4 high-speed I/O channels. IEC61000-4-2 (ESD)±14kV(Contact),±18kV(Air). IEC61000-4-4 (FET)20A for I/O,80A for Power. SOT-23-6 Working voltage: 5V
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CSRS065V0P
IEC61000-4-2
IEC61000-4-4
OT-23-6
OT-23-6
MIL-STD-750
QW-BP018
sot-23-6 marking c05
SMD MARKING CODE 302
smd sot 323 diode code 14
smd DIODE code marking 20A
IEC61000-4-4
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Untitled
Abstract: No abstract text available
Text: Contents Chart Overvoltage / Suppression Protection Te l e c o m m u n i c a t i o n s P r o d u c t C a t a l o g Transient Voltage Suppression SP72X Series SCR/Diode Arrays Glossary The SP72X family of diode arrays are Features designed to withstand extreme ESD
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SP72X
SP720
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DIODE 6kv
Abstract: HIGH VOLTAGE DIODE 6kv
Text: rp a fL -n RECTIFIER, up to 6kV, 100mA, Ü 300ns January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE • • • • • F40A F50A F60A QUICK REFERENCE DATA Low reverse recovery time
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100mA,
300ns
TEL805-498-2111
DIODE 6kv
HIGH VOLTAGE DIODE 6kv
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, up to 6kV, 260mA, 5\is January 7, 1998 M50A M60A TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE Q UICK REFERENCE DATA V r = 5kV - 6kV If = 260mA trr = 5|iS
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260mA,
TEL805-498-2111
260mA
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F60A diode
Abstract: F40A F50A F60A DIODE 6kv HIGH VOLTAGE DIODE 6kv
Text: ]l~i\/ZlS H I1—J f r ^ r H ìLfv/U U s L t ^ L r n J January 7, 1998 RECTIFIER, up to 6kV, 100mA, 300ns F40A fs o a F60A TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE QUICK REFERENCE
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100mA,
TEL805-498-2111
300nS
F60A diode
F40A
F50A
F60A
DIODE 6kv
HIGH VOLTAGE DIODE 6kv
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g84 diode
Abstract: No abstract text available
Text: RECTIFIER, 6kV, 500mA, 350ns IDIOTI i s t i January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 35QnS
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500mA,
350ns
TEL805-498-2111
500mA
35QnS
g84 diode
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, 6kV, 500mA, 350ns January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 350nS Vf= 11.2V
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500mA,
350ns
TEL805-498-2111
500mA
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, January 7, 1998 up to 6kV, 260mA, 5|JS TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • • • • • M50A M60A QUICK REFERENCE DATA Vr = 5kV - 6kV
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260mA,
TEL805-498-2111
260mA
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