6M 950 Search Results

2048 x 1 ccd linear array

Contextual Info: IMAGE SENSORS DATA SHEET FTF3020C-HS 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 September 5 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020C-HS • 35mm film compatible image format 36 x 24 mm

Allen-Bradley MSR127

Abstract: MSR126 MSR126.1T 440R-N23132 1794-PS3 Allen-Bradley 1794-PS3 GuardMaster msr127 440R-N23135 440R-N23131
Contextual Info: Presence Sensing Safety Devices Safety Light Curtains Point of Operation Control Maximum scanning range 6m/18m 19.69ft/59.06ft Resolution (object sensitivity) 14mm/30mm (0.55in/1.18in) Maximum height of protective field 1814mm/1832mm (71.4in/72.1in) Minimum height of protective field

Contextual Info: High-Speed Triple Differential Receiver with Comparators AD8143 Preliminary Technical Data FEATURES PINOUT DIAGRAM High Speed 300MHz -3dB Bandwidth @ G = +1, VO = 1 V P-P 1000V/µs Slew Rate High CMRR: 70dB @ 10MHz High Differential Input Impedance: 6MΩ

GI85L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/28 REVISED DATE : GI85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GI85L02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 80A, RDS ON = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D

GU85L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/12/06 REVISED DATE : GU85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GU85L02 provide the designer with the best combination of fast switching, ruggedized device design, low

GJ85L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/28 REVISED DATE : GJ85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GJ85L02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: DC2958-2 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.45Â @If (A)100m Ct{Cj} Nom. (F) Junction Cap.950f Carrier Lifetime (S)2.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)6m

GE85L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/12/06 REVISED DATE : GE85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GE85L02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: Ordering number : ENA0324A 2SK4065 N-Channel Power MOSFET http://onsemi.com 75V, 100A, 6mΩ, TO-263-2L Features • • ON-resistance RDS on 1=4.6mΩ (typ.) 4V drive • Input capacitance Ciss=12200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

CED83A3

Contextual Info: CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 80A, RDS ON = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

AD8143

Abstract: AD8133 MO-220-VHHD-2 CP-32-3
Contextual Info: High-Speed Triple Differential Receiver with Comparators AD8143 Preliminary Technical Data FEATURES PINOUT DIAGRAM High Speed 300MHz, 1000V/ µs @ G = 1, VO = 1 V P-P High CMRR: 70dB @ 10MHz High Differential Input Impedance: 6MΩ Imput Common Mode Range: ± 10 V ± 12 V Supplies

toko skm3

Contextual Info: r^TOKO TYPE CFSK FM Ceram ic Filters 157 TYPE CFSK Standard S Series Dimensions l Ji nt. niM 3 5M ax SKM1 SKM3 SKM2 l 6M ax - * - X 1 Description • FM-IF step ceramic filters developed for use in compact slimline sets. • Increased number of bandwidth variations, ideal for BS

20R4CT-3

Contextual Info: PRELIMINARY DATASHEET_ A 0 O C >Û Oj 20R4CT-3 40 A M P SURFACE HYPER FAST FOSITIV'E SSDI MOUNT RECTIFIER 14849 FIRESTONE BLVD. LA MIRADA. CA 90638 TEL: 213 921-9660 FAX: (213) 921-2396 C E N T E R TAF> 200 V O L T S CASE FEATURES STYLE 6M JPA or

PEB22822

Abstract: PEB22811
Contextual Info: is k h E L M VDSL CO Tx PASS FILTER DT 6 0 - 2008 D d B to -10 ft ft ft ft •20 ft ft -30 -40 DT60-2008D •DELTAXXXX y y y y -50 -60 -70 500K 900K 2M y y 3M 4M 5M 6M 7M 7.9M FREQUENCY (d B ) 40 30 20 10 -10 FEATURE -20 -30 -40 • Design to meet UH 950

atz drawings

Contextual Info: 6M Bl 10OF-060 100A *± : Outline Drawings IG B T ^EiSzL-JU IGBT MODULE : Features • Low S a tu ra tio n V o lta g e • W EE» ( M O S y - M * iS ) • V o lta g e D rive V a rie ty o f P ow er C apacity Series : A p p lica tio n s • i — $ — S E W ffl'f > ' < — 9

ICX409AK

Abstract: FZIT ccd sony super HAD LTZ4
Contextual Info: SONY IC X 409A K £fÄ 6m m 1 / 3 M PA Lti nü ICX409AK(âPALÆ’Â (Ot^M6mm ( 1 / 3 Í Í ) # 7 ~ ? ÿ ' f > M C C D |ü ^ ftít f i t t o » pdhICX0 5 9 C K 1 I^ L , D i '> V , S 7 * - a, / N & L i ¿ iJt, i rm m m & m l^ ä - c , f e * ^ 7, o m # iw r H

Contextual Info: .5 0 0 MA X . .69 9 MA X . [1 2 .7 0 ] .5 3 0 MAX . [1 3 .4 6 ] g DOT LO CA T ES TERM. LOT C O D E #1 - > & (6?)(6M)\ DATE COD E .6 4 4 [1 6 .3 6 ] PRI G> <10) & <D <D CD- AREA R E P R E S E N T S T E R M IN A L PAD D IM E N S IO N S .0 5 0 (9 ) [1 .2 7 ]

varistor k60

Abstract: K30 varistor varistor k30 ZV30K0603
Contextual Info: Multilayer Technology Varistor Plus ZV Series Low Voltage SMD Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: marketing@seielect.com • ISO 9002 / QS 9000 Registered

Contextual Info: 16Mx72 bits Unbuffered DDR SO-DIMM HYMD216726A L 6-M/K/H/L DESCRIPTION Hynix HYMD216726A(L)6-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD216726A(L)6-M/K/

Contextual Info: 16Mx72 bits Unbuffered DDR SO-DIMM HYMD216726C L 6-M/K/H/L DESCRIPTION Hynix HYMD216726C(L)6-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD216726C(L)6-M/K/

Contextual Info: mmmm ^ I Z 'C CKc +105°C Standard Radial Lead Aluminum Electrolytic Capacitors I: M L r For all long life ge neral p u rp o s e a p p lic a tio n s FEATURES • Standard size Wide capacitance range: 0.47 pF to 22,000 pF ■ Wide voltage range: 6.3 WVDC to 450 WVDC

e62320

Abstract: E 62320 26MT120A 36MB80B E.62320 26MB10B 36MB60B 36MB40B 6m 950 36MB100B
Contextual Info: Power Modules International iö r !R e c tifie r Single Phase Diode Bridges 10-35 Amps Part Number U.S. Series 'O TC VFM @ If 4 Vr r m 00 100JB05L 100JB1L 100JB2L 100JB4L 100JB6L 100JB8L 100JB10L 100JB12L 50 100 200 400 600 800 1000 1200 2 6 M B 05A 26M B10A

Contextual Info: KSS E1102-95013-AA1 1 9 95.6 C R Y S T A L O S C I L L A T O R DATA SHEET V C - D T C X O - 1 3 A D I M E N S I O N S [FEATURES] ° Digital processing Tempreature Compensad Crystal Oscillator. ° Excellent Frequency temperature charactteristized ° SineWave O u tp u t.