6T SRAM Search Results

Contextual Info: TN-45-18: CellularRAM Replacing NEC Mobile Specified RAM Introduction Technical Note Using CellularRAM Memory to Replace NEC Mobile Specified RAM µPD46128512 Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM

micron vccp

Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
Contextual Info: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring

6T SRAM

Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
Contextual Info: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM

Micron 32MB NOR FLASH

Abstract: variable resistor 104 micron resistor MT45W4MW16B micron 128MB NOR FLASH MT45W4MW16BC 4522
Contextual Info: TN-45-22: Variable vs. Fixed Latency CellularRAM Operation Introduction Technical Note Variable vs. Fixed Latency CellularRAM Operation Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous/page PSRAM. Backward compatibility is essential

Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

Contextual Info: P4C151 ULTRA HIGH SPEED 1K x 4 RESETTABLE CACHE-TAG STATIC CMOS RAM SCRAM x f - FEATURES • Single Power Supply - 5V ±10% ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)

alks

Abstract: as7c1024a-15jc
Contextual Info: March 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O

AS7C1024A

Abstract: AS7C31024A as7c1024a-15jc
Contextual Info: January 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O

TN-45-20

Contextual Info: TN-45-20: Low-Power Options for Async/Page CellularRAM Introduction Technical Note Low-Power Options for Async/Page CellularRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM, early-generation asynchronous, and page PSRAM. This backward compatibility

Contextual Info: March 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging

AS7C1026A

Abstract: AS7C1026A-10 AS7C31026A AS7C31026A-10
Contextual Info: May 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging • AS7C1026A 5V version

6T SRAM

Abstract: SRAM 6T UT62256B UT62256BPC-70LI UT62256BPC-70LLI UT62256BSC-35LI UT62256BSC-35LLI UT62256BSC-70LI UT62256BSC-70LLI Utron Technology
Contextual Info:  UTRON UT62256B I 32K X 8 BIT LOW POWER (6T) CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION Access time : 35/70ns (max.) Low power consumption: Operating : 45/30 mA (max.) Standby : 1uA (typical) L-version 0.5uA (typical) LL-version Single 5V power supply

AS6SA1288

Abstract: 32-PIN 32PIN
Contextual Info: August 2001 Advance Information AS6SA1288 2.7 - 5.5 V 128K x 8 Low Power CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1 and CE2 • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages

as7c1024a-15jc

Contextual Info: May 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages

AS7C1026A

Abstract: AS7C1026A-10 AS7C31026A
Contextual Info: January 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging

AS7C1025A

Abstract: AS7C31025A
Contextual Info: May 2001 Advance Information AS7C1025A AS7C31025A 5V/3.3V 128K X 8 CMOS SRAM Revolutionary pinout • • • • • Latest 6T 0.25u CMOS technology Easy memory expansion with CE, OE inputs Center power and ground TTL/LVTTL-compatible, three-state I/O

as7c1024a-15jc

Contextual Info: September 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages

AS7C1024A

Abstract: AS7C31024A as7c1024a-15jc
Contextual Info: February 2002 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages

as7c1024a-15jc

Contextual Info: May 2002 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages

FCRAM

Contextual Info: TN-45-14: CellularRAM Replacing Fujitsu 3V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 3V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and

MB82DBS04163C

Abstract: MT45W4MW16B Micron 256MB NOR FLASH micron vccp MT45W4MW
Contextual Info: TN-45-16: CellularRAM Replacing Fujitsu 1.8V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and

P80030

Abstract: 6T SRAM SRAM 6T UT62W256BLS-35L UT62W256BLS-35LL UT62W256BPC-70L UT62W256BPC-70LL UT62W256BSC-35L UT62W256BSC-35LL UT62W256BSC-70L
Contextual Info:  UTRON Rev. 1.0 UT62W256B 32K X 8 BIT LOW POWER 6T CMOS SRAM FEATURES GENERAL DESCRIPTION The UT62W256B is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS

AS7C1024A-15TI

Abstract: AS7C1024A AS7C31024A as7c1024a-15jc
Contextual Info: May 2002 AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages • AS7C1024A (5V version)

Contextual Info: March 2001 Advance Information AS7C1025A AS7C31025A 5V/3.3V 128K X 8 CMOS SRAM Revolutionary pinout • • • • • • Latest 6T 0.25u CMOS technology 2.0V data retention Easy memory expansion with CE, OE inputs Center power and ground TTL/LVTTL-compatible, three-state I/O