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    6T SRAM Search Results

    6T SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    6T SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TN-45-18: CellularRAM Replacing NEC Mobile Specified RAM Introduction Technical Note Using CellularRAM Memory to Replace NEC Mobile Specified RAM µPD46128512 Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM


    Original     		PDF TN-45-18: PD46128512) PD46128512, 09005aef821620d5/Source: 09005aef8213f7b7 tn4518

    micron vccp

    Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
    Text: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring


    Original     		PDF TN-45-13: 09005aef8201fbdc TN4513 09005aef8201fb90/Source: micron vccp TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816

    6T SRAM

    Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
    Text: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM


    Original     		PDF TN-45-17: sheet--MT45W1MW16PD 09005aef8214f7dc/Source: 09005aef821149d2 TN4517 6T SRAM SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram

    Micron 32MB NOR FLASH

    Abstract: variable resistor 104 micron resistor MT45W4MW16B micron 128MB NOR FLASH MT45W4MW16BC 4522
    Text: TN-45-22: Variable vs. Fixed Latency CellularRAM Operation Introduction Technical Note Variable vs. Fixed Latency CellularRAM Operation Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous/page PSRAM. Backward compatibility is essential


    Original     		PDF TN-45-22: 128Mb 09005aef823e94b1/Source: 09005aef823e9a7d Micron 32MB NOR FLASH variable resistor 104 micron resistor MT45W4MW16B micron 128MB NOR FLASH MT45W4MW16BC 4522

    alks

    Abstract: as7c1024a-15jc
    Text: March 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O


    Original     		PDF AS7C1024A AS7C31024A 128KX8 AS7C1024A 32-pin AS7C1024A) AS7C31024A) alks as7c1024a-15jc

    AS7C1024A

    Abstract: AS7C31024A as7c1024a-15jc
    Text: January 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O


    Original     		PDF AS7C1024A AS7C31024A 128KX8 32-pin AS7C1024A) AS7C31024A) AS7C1024A AS7C31024A as7c1024a-15jc

    TN-45-20

    Abstract: No abstract text available
    Text: TN-45-20: Low-Power Options for Async/Page CellularRAM Introduction Technical Note Low-Power Options for Async/Page CellularRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM, early-generation asynchronous, and page PSRAM. This backward compatibility


    Original     		PDF TN-45-20: 128Mb 09005aef822cf141/Source: 09005aef822cf0d2 TN-45-20

    Untitled

    Abstract: No abstract text available
    Text: March 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging


    Original     		PDF AS7C1026A AS7C31026A AS7C1026A 44-pin 48-ball AS7C1026A) AS7C31026A)

    AS7C1026A

    Abstract: AS7C1026A-10 AS7C31026A AS7C31026A-10
    Text: May 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging • AS7C1026A 5V version


    Original     		PDF AS7C1026A AS7C31026A 44-pin 48-ball AS7C1026A) AS7C31026A) 10ailable AS7C1026A AS7C1026A-10 AS7C31026A AS7C31026A-10

    6T SRAM

    Abstract: SRAM 6T UT62256B UT62256BPC-70LI UT62256BPC-70LLI UT62256BSC-35LI UT62256BSC-35LLI UT62256BSC-70LI UT62256BSC-70LLI Utron Technology
    Text:  UTRON UT62256B I 32K X 8 BIT LOW POWER (6T) CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION Access time : 35/70ns (max.) Low power consumption: Operating : 45/30 mA (max.) Standby : 1uA (typical) L-version 0.5uA (typical) LL-version Single 5V power supply


    Original     		PDF UT62256B 35/70ns 28-pin 144-bit P80026 6T SRAM SRAM 6T UT62256BPC-70LI UT62256BPC-70LLI UT62256BSC-35LI UT62256BSC-35LLI UT62256BSC-70LI UT62256BSC-70LLI Utron Technology

    AS6SA1288

    Abstract: 32-PIN 32PIN
    Text: August 2001 Advance Information AS6SA1288 2.7 - 5.5 V 128K x 8 Low Power CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1 and CE2 • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages


    Original     		PDF AS6SA1288 32-pin AS6SA1288 32PIN

    as7c1024a-15jc

    Abstract: No abstract text available
    Text: May 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages


    Original     		PDF AS7C1024A AS7C31024A 128KX8 AS7C1024A AS7C1024A) AS7C31024A) 32-pin as7c1024a-15jc

    Untitled

    Abstract: No abstract text available
    Text: May 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging • AS7C1026A 5V version


    Original     		PDF AS7C1026A AS7C31026A AS7C1026A AS7C1026A) AS7C31026A) 44-pin 48-ball

    AS7C1026A

    Abstract: AS7C1026A-10 AS7C31026A
    Text: January 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging


    Original     		PDF AS7C1026A AS7C31026A 44-pin 48-ball AS7C1026A) AS7C1026A AS7C1026A-10 AS7C31026A

    as7c1024a-15jc

    Abstract: No abstract text available
    Text: September 2001 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages


    Original     		PDF AS7C1024A AS7C31024A 128KX8 AS7C1024A AS7C1024A) AS7C31024A) 32-pin as7c1024a-15jc

    AS7C1024A

    Abstract: AS7C31024A as7c1024a-15jc
    Text: February 2002 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages


    Original     		PDF AS7C1024A AS7C31024A 128KX8 32-pin AS7C1024A) AS7C31024A) AS7C1024A AS7C31024A as7c1024a-15jc

    as7c1024a-15jc

    Abstract: No abstract text available
    Text: May 2002 Advance Information AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages


    Original     		PDF AS7C1024A AS7C31024A 128KX8 AS7C1024A AS7C1024A) AS7C31024A) 32-pin as7c1024a-15jc

    FCRAM

    Abstract: No abstract text available
    Text: TN-45-14: CellularRAM Replacing Fujitsu 3V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 3V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and


    Original     		PDF TN-45-14: CellularR9e486 TN4514 09005aef8209e446/Source: 09005aef8209e486 FCRAM

    MB82DBS04163C

    Abstract: MT45W4MW16B Micron 256MB NOR FLASH micron vccp MT45W4MW
    Text: TN-45-16: CellularRAM Replacing Fujitsu 1.8V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and


    Original     		PDF TN-45-16: sheet--MT45W4MW16B 09005aef8213291b/Source: 09005aef8209e486 TN4514 MB82DBS04163C MT45W4MW16B Micron 256MB NOR FLASH micron vccp MT45W4MW

    P80030

    Abstract: 6T SRAM SRAM 6T UT62W256BLS-35L UT62W256BLS-35LL UT62W256BPC-70L UT62W256BPC-70LL UT62W256BSC-35L UT62W256BSC-35LL UT62W256BSC-70L
    Text:  UTRON Rev. 1.0 UT62W256B 32K X 8 BIT LOW POWER 6T CMOS SRAM FEATURES GENERAL DESCRIPTION The UT62W256B is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS


    Original     		PDF UT62W256B UT62W256B 144-bit P80030 P80030 6T SRAM SRAM 6T UT62W256BLS-35L UT62W256BLS-35LL UT62W256BPC-70L UT62W256BPC-70LL UT62W256BSC-35L UT62W256BSC-35LL UT62W256BSC-70L

    AS7C1024A-15TI

    Abstract: AS7C1024A AS7C31024A as7c1024a-15jc
    Text: May 2002 AS7C1024A AS7C31024A 5V/3.3V 128KX8 CMOS SRAM Evolutionary Pinout Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages • AS7C1024A (5V version)


    Original     		PDF AS7C1024A AS7C31024A 128KX8 32-pin AS7C1024A) AS7C31024A) AS7C1024A-15TI AS7C1024A AS7C31024A as7c1024a-15jc

    Untitled

    Abstract: No abstract text available
    Text: March 2001 Advance Information AS7C1025A AS7C31025A 5V/3.3V 128K X 8 CMOS SRAM Revolutionary pinout • • • • • • Latest 6T 0.25u CMOS technology 2.0V data retention Easy memory expansion with CE, OE inputs Center power and ground TTL/LVTTL-compatible, three-state I/O


    Original     		PDF AS7C1025A AS7C31025A AS7C1025A AS7C1025A) AS7C31025A)

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


    OCR Scan     		PDF P4C150 24-Pin 28-Pin SMD-5962-88588 -15LM -20LM -25LM

    Untitled

    Abstract: No abstract text available
    Text: P4C151 ULTRA HIGH SPEED 1K x 4 RESETTABLE CACHE-TAG STATIC CMOS RAM SCRAM x f - FEATURES • Single Power Supply - 5V ±10% ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)


    OCR Scan     		PDF P4C151 MIL-STD-883C P4C151 -10PC -12PC -12DC -15PC -15DC -20PC -20DC