6X MOSFET Search Results

Contextual Info: EVALUATION KIT AVAILABLE ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?

Contextual Info: EVALUATION KIT AVAILABLE ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?

IR7309

Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
Contextual Info: 19-1245; Rev 2; 5/09 ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?

IRFP260 equivalent

Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
Contextual Info: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details PRMAC-6X Product Details Quick Links Military/Aerospace High Performance Relays

Contextual Info: PRODUCT SPECIFICATION DATE 09/01/2006 SOLID STATE RELAY - MOSFET OUTPUT NO.62M20009 REV. cosmo KAQW216S ELECTRONICS CORPORATION 1 SHEET 1 OF 7 OUTSIDE DIMENSION e d o C e t a D SX 6X 1X 2 W 8 . 9 4 . 4 5 . 00 3 . 2 Unit mm Tolerance 4 5 . 2 . x a M 5 3 . 2

Contextual Info: PRMAC-6X Product Details Military/Ae rospace High Pe rform an ce Re lays Not reviewed for RoHS Compliance Previous 1 . 11 12 13 14 [15] . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product

KAQW216S

Abstract: w216s kaqw216
Contextual Info: PRODUCT SPECIFICATION DATE：09/01/2006 cosmo SOLID STATE RELAY - MOSFET OUTPUT NO.62M20009 REV. KAQW216S ELECTRONICS CORPORATION SHEET 1 OF 7 1 OUTSIDE DIMENSION︰ e d o C e t a D SX 6X 1X 2 W 8 . 9 4 . 4 5 0. +- 3 . 2 4 . 3 . 5 . . x a M 5 3 . 2 Unit︰mm

F7101

Abstract: EIA-541 IRF7101
Contextual Info: IRF7470PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 6X 2 3 MIN .0532 .0688 1.35 1.75 A1 .0040 0.25 .0098 0.10 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC

F7101

Abstract: IRF7101 EIA-541
Contextual Info: IRF7469PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 6X 2 3 MIN .0532 .0688 1.35 1.75 A1 .0040 0.25 .0098 0.10 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC

Contextual Info: Reduce GSM B attery Peak C urrent by 6x The MAX1687/MAX1688^ step -u p DC-DC converters deliver 2W from a single Li+ cell or three NiCd cells. Their control scheme is optimized for applications requiring short, high-current b u rs ts such a s GSM h an d sets and wireless

F7101

Abstract: EIA-541 IRF7101
Contextual Info: IRF7471PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 6X 2 3 MIN .0532 .0688 1.35 1.75 A1 .0040 0.25 .0098 0.10 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC

MIP30N03A

Contextual Info: w w w .fairchildsem i.com S E M I C O N D U C T O R tm RC5041 Pr ogr ammabl e DC-DC Conver t er for Penti um P55C, K6 , and 6x 86MX™ M2 Processors Features Applications • Programmable power supply for P54C, P55C, K6, and M2 based CPU motherboards

EIA-541

Abstract: F7101 IRF7101
Contextual Info: PD- 95731 IRF7452PbF • Lead-Free 1 IRF7452PbF 2 IRF7452PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 6X e1 .0098 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098

Contextual Info: w w w .fairchildsem i.com S E M I C O N D U C T O R tm RC5041 Pr ogr ammabl e DC-DC Conver t er for Penti um P55C, K6 , and 6x 86MX™ M2 Processors Features Applications • Programmable power supply for P54C, P55C, K6, and M2 based CPU motherboards

resistor 2012

Abstract: IRF7821 lmk107bj105ma GMK316BJ105ML IRF7832 JMK212BJ475MG JMK432BJ107MU MAX8538 2.2nF X5R 1206 6dl2
Contextual Info: 10.8V to 13.2V VIN VL D1 C2 10uF 25V X5R 2x 1.25V @8A VOUT2 N2 IRF7821 R1 0.02 0.5W L2 0.6uH N4 IRF7832 R21 1.5 0.5W C11 100uF 6V X5R (6x) R2 1.21k C5 0.1uF C8 10pF C39 2.2nF D2 1 BST2 BST1 28 2 DH2 DH1 27 3 LX2 U1 MAX8538 LX1 26 4 ILIM2 ILIM1 25 6 DL2 DL1 23

O2W transistor

Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

6X MOSFET

Abstract: NCP304 NUS1204MN
Contextual Info: NUS1204MN Product Preview Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to

6x fet

Abstract: NUS1204MN NCP304 battery charger NCP304 NUS1204MNT1G 100 6x DIODE 47-25 l
Contextual Info: NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and

ovp ic

Abstract: NUS1204MN
Contextual Info: NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: NTLJF1103P Product Preview Power MOSFET and Schottky Diode −8 V, −4.3 A, mCool] P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, WDFN Package http://onsemi.com MOSFET Features V BR DSS RDS(on) Max −8 V 120 mW @ −2.5 V • WDFN 2x2 mm Package with Exposed Drain Pad for

5M MARKING CODE SCHOTTKY DIODE

Abstract: NTLJF3118N
Contextual Info: NTLJF3118N Product Preview Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • • 70 mW @ 4.5 V

Contextual Info: NTLUD3191PZ Product Preview Power MOSFET −20 V, −1.8 A, mCoolt Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features http://onsemi.com • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • • Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving