6X109 Search Results

mic4427

Abstract: MIC4428 MIC4426 SMD MOSFET DRIVE DATASHEET 4427 8 PIN SMD MOSFET DRIVE 4427 8 PIN tl494 5962-8850308PA 5952-8850308PA MIC4426BM MIC4426CN
Contextual Info: MIC4426/4427/4428 Micrel, Inc. MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers

InSb spectral response

Abstract: P5172 detector inas
Contextual Info: In As, InSb Photovoltaic Detectors Photovoltaic Detectors with High-speed Response and Low Noise InAs detectors cover a wavelength range equivalent to that o f PbS cells, and InSb detectors cover a range equivalent to PbSe cells. How­ ever, InAs and InSb detectors have higher response speed and lower

2N2907AUE1

Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
Contextual Info: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

MIC4427YM

Abstract: mic4426yn MIC4428YMM MIC4426ZM MIC4427-YMM mic4428z MIC4428YM MIC4428YN MIC4427yn mic4426cm
Contextual Info: MIC4426/4427/4428 Micrel, Inc. MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers

MIC426CN

Abstract: tl494 equivalent tsc170 MIC427CM mic427cn TL494 MIC426BM mic4428 mic4426bn MIC1428CN
Contextual Info: MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS pro­ cess for low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels to output

OCXO S15

Abstract: 50/OCXO S15
Contextual Info: CFPO-2 S: Ultra Low Phase Noise & High Stability OCXO ISSUE 4; 1 APRIL 2002 Marking Includes Description • Model number including options ■ Frequency ■ Serial number ■ Date code (Year/Week) Ultra low phase noise and high stability OCXO Package Outlines

CFPO-5

Abstract: MARKING CODE 36b
Contextual Info: CFPO-5: Standard OCXO for Stratum 3E and UMTS ISSUE 3; 1 SEPTEMBER 2001 Environmental Specification (non-operating) Description • Vibration: 10g for 10 to 500Hz ■ SC Cut Standard OCXO (CFPO-5A) ■ Shock: 50g for 11ms ■ AT Cut Standard OCXO (CFPO-5B)

tl494 application notes

Abstract: MIC4426YN mic4427ym TL494 MIC4427ZM mic4426CN mic4428ym am 4428 MIC427 MIC4426BN
Contextual Info: MIC4426/4427/4428 Micrel, Inc. MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers

manson

Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113
Contextual Info: INCH-POUND MIL-PRF-19500/695 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

79LV2040

Contextual Info: 79LV2040 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

cfpo-4

Abstract: ocxo 10MHz 12v
Contextual Info: CFPO-4: High Stability OCXO High stability OCXO Bottom View • 40.0 x 30.0 x 20.0mm 40 ■ 51.0 x 41.0 x 25.0mm (51) ■ 50.8 x 50.8 x 25.0mm (50) Standard 12V (12) ■ Optional 9V (9), 15V (15) 4 5 2 6 1 40.0 max ∅0.8±0.05 Frequency Ranges ■ 2.0 to 16.3840MHz (CFPO-4, -A1, -A2)

P4115

Abstract: B1919 G5832-11
Contextual Info: PbSe Photoconductive Detectors Capable of detecting to 5 fim range TE-cooled types • High-speed response • Operates at room temperature Compared to other types of detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at

lem lt 100 p

Abstract: P791-01
Contextual Info: PbSe Photoconductive Detectors Capable of detecting to 5 pm range TE-cooled types • High-speed response • Operates at room temperature Com pared to other types o f detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at

Oscilloquartz

Abstract: oscilloquartz ocxo 5MHz OCXO 8653 OCXO8653 Oscilloquartz SA 3X108 6x109 8653 p ocxo 5mhz sma
Contextual Info: OCXO 8653 ultra low phase noise Oven Controlled Crystal Oscillator The 8653 OCXO model offers Ultra Low Phase Noise, excellent stability and spurious rejection in a 65x65x 65 mm package. Outline and Electrical connections. All dimensions in mm inches The 8653 OCXO standard frequencies include 5 and

MIC426CM

Abstract: 4427 mosfet mic426cn Speed control USING TL494 MIC426BN MIC4426BN MIC426BM mic4428bn tl494 mosfet MIC4427BM
Contextual Info: MIC4426/4427/4428 Micrel MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver Final Information General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These

CFPO-2

Contextual Info: CFPO-2 S: Ultra Low Phase Noise & High Stability OCXO ISSUE 4; 1 APRIL 2002 Marking Includes Description • Model number including options ■ Frequency ■ Serial number ■ Date code (Year/Week) ■ Ultra low phase noise and high stability OCXO Package Outlines

Contextual Info: CFPO-4: High Stability OCXO Outline in mm - Package 40 Description Bottom View High stability OCXO 17.8 • 40.0 x 30.0 x 20.0mm 40 ■ 51.0 x 41.0 x 25.0mm (51) ■ 50.8 x 50.8 x 25.0mm (50) Standard 12V (12) ■ Optional 9V (9), 15V (15) 4 5 2 6 1 40.0 max

mo-36b-s 10.0mhz

Contextual Info: CFPO-5: Standard OCXO for Stratum 3E and UMTS ISSUE 3; 1 SEPTEMBER 2001 • Vibration: 10g for 10 to 500Hz Description ■ Storage Temperature Range: –55 to 90°C ■ SC Cut Standard OCXO (CFPO-5A) ■ AT Cut Standard OCXO (CFPO-5B) Marking Includes Package Outlines

Contextual Info: CFPO-5: Standard OCXO for Stratum 3E and UMTS ISSUE 3; 1 SEPTEMBER 2001 • Vibration: 10g for 10 to 500Hz Description ■ Storage Temperature Range: –55 to 90°C ■ SC Cut Standard OCXO (CFPO-5A) ■ AT Cut Standard OCXO (CFPO-5B) Marking Includes Package Outlines

TL494

Abstract: MIC4427YN
Contextual Info: MIC4426/4427/4428 Micrel, Inc. MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers

P5172

Contextual Info: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass d e w a r cooled by liq u id nitrogen is used for stan d ard d e te cto r package. It allow s for 8-h o u r co n tin u o u s cooling.

4427 mosfet

Abstract: am 4428 4427 MIC427CM mic4427 Switching power supply TL494 tl494 mosfet MIC4426 tl494 MIC4426AM
Contextual Info: MIC4426/4427/4428 Micrel MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These

P791-01

Abstract: P791-02 p903 P3207 P791 P791-03 G708 hamamatsu PIN TO5
Contextual Info: HAMAMATSU CORP 1=1E D • 422^ 30^ 0G02722 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) fC ) Peak Respon­ sivity