7 PIN IC DIP DATASHEET Search Results

A2388

Abstract: C1005y5v1c104zt AN1060 TAJA106M016 C1005Y5V1C104 ISL6292 A23879-ND 5002k-nd 5002K V298
Contextual Info: ISL6292EVAL1Z Evaluation Board Application Note January 26, 2007 AN1060.1 Description Features The ISL6292EVAL1Z is a complete platform for the evaluation on all datasheet specifications and functionalities. The on board 9-bit DIP switch facilitates programming

A2388

Contextual Info: Application Note 1064 ISL6292EVAL2Z Evaluation Board Description Key Features The ISL6292EVAL2Z is a complete platform for the evaluation on all datasheet specifications and functionalities. The on board 9-bit DIP switch facilitates programming charging current, setting EN input, battery thermal status, and so on.

A2388

Abstract: C1005y5v1c104zt USB A PCB MALE AN1064 ISL6292 ISL6292EVAL2 WM-64 5002k-nd
Contextual Info: ISL6292EVAL2 Evaluation Board Application Manual PRELIMINARY July 2003 AN1064 Description Features The ISL6292EVAL2 is a complete platform for the evaluation on all datasheet specifications and functionalities. The on board 9-bit DIP switch facilitates programming charging

A2388

Abstract: C1005y5v1c104zt AN1060 ISL6292 ISL6292EVAL1 dip 2.54mm Header 3 Pin 5002K
Contextual Info: ISL6292EVAL1 Evaluation Board Application Manual PRELIMINARY AN1060 July 2003 Description Features The ISL6292EVAL1 is a complete platform for the evaluation on all datasheet specifications and functionalities. The on board 9-bit DIP switch facilitates programming charging

heartbeat sensor piezo

Abstract: heartbeat sensor piezo sensor 78l05 so8 QT112 heartbeat sensor QT115H QT110 QT111 QT111-I QT115
Contextual Info: QT11x VARIATIONS QT111 QT112 QT115 Longer recalibration timeouts Faster response time Variable gain, daisy-chaining 4 August 2004 Copyright QRG Ltd. UK 4 August 2004 Quantum Research Group Ltd. QT111-I / QT111H-I QProx 8-pin Sensor See QT110 datasheet for primary information. This sheet only lists differences with the QT110.

oz9938

Abstract: OZ9938GN oz993
Contextual Info: OZ9938 Change Summary CHANGES No. Applicable Section 1. Electrical Characteristics 2. Throughout datasheet Description Update 慞rotection release threshold in ‘Timer & protection’ parameter Min & Max limits Miscellaneous changes Page s 3 - REVISION HISTORY

M1482

Abstract: ML4825
Contextual Info: July 1992 Micro Linear ML4825 High Frequency Power Supply Controller GENERAL DESCRIPTION easily im plem ented. Please refer to the FB3480 datasheet for more information. The ML4825 High Frequency PW M Controller is an IC controller optimized for use in Switch Mode Power

9.6 soft start

Contextual Info: July 1992 % M ic r o Linear ML4825 High Frequency Power Supply Controller GENERAL DESCRIPTION easily implemented. Please refer to the FB3480 datasheet for more information. The ML4825 High Frequency PWM Controller is an IC controller optimized for use in Switch Mode Power

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

Contextual Info: ADVANCEINFORMATION Datasheet in Preparation yi/i/jxi/i/i Video Operational Am plifier _Features ♦ 0.0170.05% Differential Phase/Gain The MAX404 remains stable while driving unlimited capaci­ tive loads. As a result, flash A/D converter inputs, long

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

JANSR2N3700UB

Abstract: ESCC
Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram

micro linear ml4825

Contextual Info: July 1992 Micro Linear ML4825 High Frequency Power Supply Controller GENERAL DESCRIPTION easily implemented. Please refer to the FB3480 datasheet for more information. The ML4825 High Frequency PWM Controller is an IC controller optimized for use in Switch Mode Power

Contextual Info: UMFT201XE Version 1.0 Document Reference No.: FT_000650 Clearance No.: FTDI# Future Technology Devices International Ltd Datasheet UMFT201XE USB to I2C Development Module UMFT201XE is a USB to I2C DIP module with a 0.6” row pitch. 1 Introduction The UMFT201XE is a development module

marking code RAD SMD Transistor npn

Abstract: JS55
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

J2N2222

Abstract: soc2222
Contextual Info: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.

520200107R

Abstract: 2N2907A1 2N2907AUB
Contextual Info: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.

520100204R

Abstract: SOC2222ARHRT JANS2N2222AUB JANSR2N2222AUB JS2222 J2N2222A JANS2N2222AUBT JANSR2N2222AUBT 520100212R 520100204
Contextual Info: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Hermetic packages LCC-3UB LCC-3 • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

Contextual Info: User Guide 001 ISL78692EVAL1Z Evaluation Board User Guide Description Key Features The ISL78692EVAL1Z is a complete platform for the evaluation on all datasheet specifications and functionalities. The onboard 8-bit DIP switch facilitates battery charge current

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 LCC-3UB Pin 4 in LCC-3UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

5201/002/05R

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram