70 GHZ Search Results

Adapters

Contextual Info: Adapters In Series - Between Series In Series Adapters SPECIFICATIONS MODEL Connector Type Frequency Range VSWR Max 70-500-1 SMA - F/F 18.0 GHz 1.15:1 70-500-2 SMA - M/M 18.0 GHz 1.15:1 70-500-3 SMA - M/F 18.0 GHz 1.15:1 70-500-4 N - F/F 18.0 GHz 1.12:1

Contextual Info: DBS-Band Synthesized Frequency Converter Single / Dual FCS200-DBS Operating Bands Up-Converters Features •       RF Output GHz IF Input (MHz) 17.3 – 18.1 70 17.3 – 18.1 70 RF Input (GHz) IF Output (MHz) 17.3 – 18.1 GHz 70 17.3 – 18.1 GHz

Contextual Info: HMC-T2270 Synthesized Signal Generator, 10 MHz to 70 GHz 2 Elizabeth Drive • Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.tm-hittite.com HMC-T2270 SYNTHESIZED SIGNAL GENERATOR, 10 MHz to 70 GHz v02.0712 Wide Frequency Range, 10 MHz to 70 GHz Signal Generator!

Contextual Info: E GAV30 GAV50 GAV60 GAV100 Electrical Characteristics @ 25 °C GAV30 GAV50 GAV60 GAV100 Units Quantum Efficiency 60 70 60 (70) 60 (70) 60 (70) % min. (typ.) Responsivity @1300nm .76 (.84) .76 (.84) .76 (.84) .76 (.84) AAV min. (typ.) M=1 Breakdown Voltage *

AN1032

Abstract: NES2427P-70
Contextual Info: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3

Contextual Info: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3

NEC 743 a

Abstract: transistor NEC D 586 NES1823P-70
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-70 70 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-70 is a 70 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 70 W of output power CW with high

163DCT

Abstract: EWP63 F137PC0240CB EW63 waveguide EWP63S 163SEM EWP63-59W 163DE EWSH EWFTK-63
Contextual Info: Ordering Information tor Waveguide Assemblies Frequency* GHz Waveguide Type Connectort Tunable Flange Typett Pressure Window - 55000A-137 55001-137 223306-70 F137PA0240BB F137PC0240CB F137MH0600HB 55000A-137 55001-137 223306-70 F137PA0240BA* F137PC0240CA*

Contextual Info: WAVEGUIDE DIPLEXER Waveguide Diplexer Waveguide Insertion Loss dB Max. Flatness (dB) Max. Isolation (dB) Min. Return Loss (dB) Min. Output Type 7.1-8.5 WR112 1.2 0.4 70 18 FBP84/ SMA 10.7-11.745 WR75 1.2 0.4 70 18 FBP120/ SMA 12.751-13.248 WR75 1.2 0.4 70

EPB025A-70

Contextual Info: EPB025A-70 Low Noise High Gain Heterojunction FET FEATURES • • S S 70 • D 40 • 20 NON-HERMETIC LOW COST CERAMIC 70 MIL PACKAGE TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

BPDV3120R

Contextual Info: 70 GHz BALANCED PHOTODETECTOR BPDV3120R PRODUCT BRIEF KEY FEATURES OVERVIEW  70 GHz bandwidth guaranteed The balanced photodetector consists of two 75 GHz, waveguide-integrated photodiodes on one single chip. As a single-balanced photodetector the configuration ensures an excellent uniformity of the paired photodiodes

XPDV3120R

Contextual Info: 70 GHz PHOTODETECTOR XPDV3120R PRODUCT BRIEF KEY FEATURES OVERVIEW  70 GHz bandwidth The XPDV3120R comprises a single 75 GHz waveguide-integrated photodiode, which shows an extremely flat frequency response, both in power and in phase. The on-chip integrated bias-network with an optimized

gold detectors circuit

Abstract: RF Power detector RSSI
Contextual Info: HMC-C054 v00.0608 RMS POWER DETECTOR 70 dB, 0.01 - 2 GHz Features ±1 dB Detection Accuracy to 2 GHz Input Dynamic Range: -70 dBm to +10 dBm RF Signal Wave Shape & Crest Factor Independent +12V Operation from -55°C to +85°C Excellent Temperature Stability

Contextual Info: HMC610LP4 / 610LP4E v02.0607 70 dB RMS POWER DETECTOR, DC - 3.9 GHz Typical Applications Features The HMC610LP4 E is ideal for: Accurate RMS-to-DC Conversion: DC to 3.9 GHz[1] • Cellular / PCS / 3G Input Dynamic Range of >70 dB: -60 to +10 dBm in 50 Ohms

magnetron kw

Abstract: magnetrons MAGNETRON magnetron* -coaxial
Contextual Info: Magnetrons VMU 1134 Magnetron Description: 70 kW, Ku-band coaxial magnetron Features: • · · · · · · · · 150 Sohier Road Beverly, Massachusetts Beverly Microwave Division Frequency 14.0 – 15.2 GHz Peak Power Output 70 kW Duty Cycle .0012 Anode Voltage 18 kV

CHN 703

Abstract: ETC1-1-13 H610 HMC610LP4 HMC610LP4E
Contextual Info: HMC610LP4 / 610LP4E v02.0607 70 dB RMS POWER DETECTOR, DC - 3.9 GHz Typical Applications Features The HMC610LP4 E is ideal for: Accurate RMS-to-DC Conversion: DC to 3.9 GHz[1] • Cellular / PCS / 3G Input Dynamic Range of >70 dB: -60 to +10 dBm in 50 Ohms

Contextual Info: HMC-T2270 Synthesized Signal Generator, 10 MHz to 70 GHz 2 Elizabeth Drive • Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.tm-hittite.com Instrumentation Product Support at TE@hittite.com HMC-T2270 SYNTHESIZED SIGNAL GENERATOR, 10 MHz to 70 GHz

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

Contextual Info: HMC602LP4 / 602LP4E v03.0209 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 10ns Output Response Time

magnetron kw

Abstract: magnetron 1135 Magnetron 1.5 kW
Contextual Info: Q 0UR JDWQH V VMX 1135 Magnetron Description: 70 kW, X-band coaxial magnetron Features: • · · · · · · · · 150 Sohier Road Beverly, Massachusetts Beverly Microwave Division Frequency 8.5 – 9.6 GHz Peak Power Output 70 kW Duty Cycle .0012 Anode Voltage 18 kV

Contextual Info: Programmable Attenuators Models 3404, 3406, 3408 & 3409 Programmable Attenuators dc to 6.0 GHz 1 Watt with optional TTL Interface CELL CONFIGURATIONS: Model Number Cell Increments dB 3404-15 4 15/1 1, 2, 4, 8 3404-55 4 55/5 5, 10, 20, 20 3404-70 4 70/10

HMC602LP4

Abstract: HMC602LP4E
Contextual Info: HMC602LP4 / 602LP4E v03.0209 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 10ns Output Response Time

HMC602LP4

Contextual Info: HMC602LP4 / 602LP4E v02.0109 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 8ns Output Response Time

AN1032

Abstract: NES1823P-70
Contextual Info: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°