Adapters
Abstract: No abstract text available
Text: Adapters In Series - Between Series In Series Adapters SPECIFICATIONS MODEL Connector Type Frequency Range VSWR Max 70-500-1 SMA - F/F 18.0 GHz 1.15:1 70-500-2 SMA - M/M 18.0 GHz 1.15:1 70-500-3 SMA - M/F 18.0 GHz 1.15:1 70-500-4 N - F/F 18.0 GHz 1.12:1
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Abstract: No abstract text available
Text: DBS-Band Synthesized Frequency Converter Single / Dual FCS200-DBS Operating Bands Up-Converters Features • RF Output GHz IF Input (MHz) 17.3 – 18.1 70 17.3 – 18.1 70 RF Input (GHz) IF Output (MHz) 17.3 – 18.1 GHz 70 17.3 – 18.1 GHz
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FCS200-DBS
ARUN-70DBS
ARUD-70DBS
PB-FCS200-DBS-13150
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Untitled
Abstract: No abstract text available
Text: HMC-T2270 Synthesized Signal Generator, 10 MHz to 70 GHz 2 Elizabeth Drive • Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.tm-hittite.com HMC-T2270 SYNTHESIZED SIGNAL GENERATOR, 10 MHz to 70 GHz v02.0712 Wide Frequency Range, 10 MHz to 70 GHz Signal Generator!
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HMC-T2270
HMC-T2270
HMC-PC01
HMC-PC02
HMC-PC03
HMC-PC04
HMC-PC05
HMC-PC06
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AN1032
Abstract: NES2427P-70
Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3
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NES2427P-70
NES2427P-70
24-Hour
AN1032
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3
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NES2427P-70
NES2427P-70
24-Hour
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NEC 743 a
Abstract: transistor NEC D 586 NES1823P-70
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-70 70 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-70 is a 70 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 70 W of output power CW with high
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NES1823P-70
NES1823P-70
IMT2000
NEC 743 a
transistor NEC D 586
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Untitled
Abstract: No abstract text available
Text: WAVEGUIDE DIPLEXER Waveguide Diplexer Waveguide Insertion Loss dB Max. Flatness (dB) Max. Isolation (dB) Min. Return Loss (dB) Min. Output Type 7.1-8.5 WR112 1.2 0.4 70 18 FBP84/ SMA 10.7-11.745 WR75 1.2 0.4 70 18 FBP120/ SMA 12.751-13.248 WR75 1.2 0.4 70
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WR112
FBP84/
FBP120/
FBP140/
FBP220
FBP220/
DIPLEXW-28-3704439452
FBP320
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EPB025A-70
Abstract: No abstract text available
Text: EPB025A-70 Low Noise High Gain Heterojunction FET FEATURES • • S S 70 • D 40 • 20 NON-HERMETIC LOW COST CERAMIC 70 MIL PACKAGE TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPB025A-70
12GHz
EPB025A-70
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BPDV3120R
Abstract: No abstract text available
Text: 70 GHz BALANCED PHOTODETECTOR BPDV3120R PRODUCT BRIEF KEY FEATURES OVERVIEW 70 GHz bandwidth guaranteed The balanced photodetector consists of two 75 GHz, waveguide-integrated photodiodes on one single chip. As a single-balanced photodetector the configuration ensures an excellent uniformity of the paired photodiodes
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BPDV3120R
log10|
S21-S31
BPDV3120R
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XPDV3120R
Abstract: No abstract text available
Text: 70 GHz PHOTODETECTOR XPDV3120R PRODUCT BRIEF KEY FEATURES OVERVIEW 70 GHz bandwidth The XPDV3120R comprises a single 75 GHz waveguide-integrated photodiode, which shows an extremely flat frequency response, both in power and in phase. The on-chip integrated bias-network with an optimized
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XPDV3120R
XPDV3120R
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gold detectors circuit
Abstract: RF Power detector RSSI
Text: HMC-C054 v00.0608 RMS POWER DETECTOR 70 dB, 0.01 - 2 GHz Features ±1 dB Detection Accuracy to 2 GHz Input Dynamic Range: -70 dBm to +10 dBm RF Signal Wave Shape & Crest Factor Independent +12V Operation from -55°C to +85°C Excellent Temperature Stability
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HMC-C054
HMC-C054
gold detectors circuit
RF Power detector
RSSI
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Untitled
Abstract: No abstract text available
Text: HMC610LP4 / 610LP4E v02.0607 70 dB RMS POWER DETECTOR, DC - 3.9 GHz Typical Applications Features The HMC610LP4 E is ideal for: Accurate RMS-to-DC Conversion: DC to 3.9 GHz[1] • Cellular / PCS / 3G Input Dynamic Range of >70 dB: -60 to +10 dBm in 50 Ohms
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HMC610LP4
610LP4E
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AT-31625
Abstract: AT-33225 AT-36408 AT-38086
Text: Medium/High Power Transistors Typical Specifications @ 25°C Case Temperature Part Number Frequency (GHz) VCE (V) Pout (dBm) Power Gain (dB) Collector Efficiency (%) Package Page No. AT-31625 0.9 4.8 +28, CW 9 70 MSOP-3 4-43 AT-33225 0.9 4.8 +31, CW 9 70
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AT-31625
AT-33225
AT-36408
AT-38086
AT-31625
AT-33225
AT-36408
AT-38086
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magnetron kw
Abstract: magnetrons MAGNETRON magnetron* -coaxial
Text: Magnetrons VMU 1134 Magnetron Description: 70 kW, Ku-band coaxial magnetron Features: • · · · · · · · · 150 Sohier Road Beverly, Massachusetts Beverly Microwave Division Frequency 14.0 – 15.2 GHz Peak Power Output 70 kW Duty Cycle .0012 Anode Voltage 18 kV
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Abstract: No abstract text available
Text: HMC-T2270 Synthesized Signal Generator, 10 MHz to 70 GHz 2 Elizabeth Drive • Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.tm-hittite.com Instrumentation Product Support at TE@hittite.com HMC-T2270 SYNTHESIZED SIGNAL GENERATOR, 10 MHz to 70 GHz
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HMC-T2270
HMC-T2270
HMC-PC01
HMC-PC02
HMC-PC03
HMC-PC04
HMC-PC05
HMC-PC06
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Untitled
Abstract: No abstract text available
Text: HMC602LP4 / 602LP4E v03.0209 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 10ns Output Response Time
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HMC602LP4
602LP4E
HMC602LP4E
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magnetron kw
Abstract: magnetron 1135 Magnetron 1.5 kW
Text: Q 0UR JDWQH V VMX 1135 Magnetron Description: 70 kW, X-band coaxial magnetron Features: • · · · · · · · · 150 Sohier Road Beverly, Massachusetts Beverly Microwave Division Frequency 8.5 – 9.6 GHz Peak Power Output 70 kW Duty Cycle .0012 Anode Voltage 18 kV
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Abstract: No abstract text available
Text: Programmable Attenuators Models 3404, 3406, 3408 & 3409 Programmable Attenuators dc to 6.0 GHz 1 Watt with optional TTL Interface CELL CONFIGURATIONS: Model Number Cell Increments dB 3404-15 4 15/1 1, 2, 4, 8 3404-55 4 55/5 5, 10, 20, 20 3404-70 4 70/10
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HMC602LP4
Abstract: HMC602LP4E
Text: HMC602LP4 / 602LP4E v03.0209 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 10ns Output Response Time
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HMC602LP4
602LP4E
HMC602LP4E
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HMC602LP4
Abstract: No abstract text available
Text: HMC602LP4 / 602LP4E v02.0109 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 8ns Output Response Time
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HMC602LP4
602LP4E
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AN1032
Abstract: NES1823P-70
Text: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°
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NES1823P-70
NES1823P-70
IMT2000
24-Hour
AN1032
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Untitled
Abstract: No abstract text available
Text: E GAV30 GAV50 GAV60 GAV100 Electrical Characteristics @ 25 °C GAV30 GAV50 GAV60 GAV100 Units Quantum Efficiency 60 70 60 (70) 60 (70) 60 (70) % min. (typ.) Responsivity @1300nm .76 (.84) .76 (.84) .76 (.84) .76 (.84) AAV min. (typ.) M=1 Breakdown Voltage *
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GAV30
GAV50
GAV60
GAV100
GAV30
GAV60
1300nm
IL-45208
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163DCT
Abstract: EWP63 F137PC0240CB EW63 waveguide EWP63S 163SEM EWP63-59W 163DE EWSH EWFTK-63
Text: Ordering Information tor Waveguide Assemblies Frequency* GHz Waveguide Type Connectort Tunable Flange Typett Pressure Window - 55000A-137 55001-137 223306-70 F137PA0240BB F137PC0240CB F137MH0600HB 55000A-137 55001-137 223306-70 F137PA0240BA* F137PC0240CA*
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UG-344/Uttt
CPR137G
PDR70
163DCT
163DET
EWP63S
5000A-137
163SEM
F137PA0240BB
F137PC0240CB
EWP63
EW63 waveguide
163SEM
EWP63-59W
163DE
EWSH
EWFTK-63
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40
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023SbOS
CGY50
OT-143
CGY40
CLY10
CGY52
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