70-065-65 2A Search Results

Contextual Info: 108&3
#0045&3
".1-*'*&3 PB50 551888"1&9.*$305&$)$0.



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 M I C R O T E C H N O L O G Y FEATURES • WIDE SUPPLY RANGE — ±30V to ±100V • HIGH OUTPUT CURRENT — Up to 2A Continuous • VOLTAGE AND CURRENT GAIN • HIGH SLEW RATE — 50V/µs Minimum

10W ZENER DIODES

Abstract: 10W zener diode zener diode 30c 10 watt zener diode NTE5182A Zener Diode NTE5198A 12 volt zener diode 10 watts 3.9V ZENER DIODE zener 10w NTE5178A
Contextual Info: NTE5174A thru NTE5232A Zener Diode, 10 Watt ±5% Tolerance Features: D Zener Voltage 3.9V to 200V D DO4 Stud Mount Package Absolute Maximum Ratings: Forward Voltage IF = 2A , VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V

1N9245

Abstract: 1N9242 1N9280 1N9241 1N9239 1N9247 IN750 1N9232 1NS226 IN757
Contextual Info: INTERNATIONAL SEHICOND 4TE D T00037Ô ZENER DIODES JEOEC TYPE NO. T-!M MAXIMUM REVERSE CURRENT @ V. = 1 VOLT NOMINAL ZENER VOLTAGE Vt @ l „ ZENER TEST CURRENT In MAXIMUM ZENER IMPEDANCE l v @ Iji @25°C @*150°C V0LÎS mA OHMS -A TYPICAL TEMP COEFF.OF ZENER

KFS2-440

Abstract: NASM45938 KFS2-M3 kfse-116-4 KPS6-m3-3 KFS2-632 KFS2-256 kps6 KF2-M3 KFSE-116
Contextual Info: F ASTENERS FOR U SE IN OR WITH P C B OA R D S FASTENERS FOR USE IN OR WITH PC BOARDS PennEngineering Fastening Technologies manufactures and sells a wide variety of fasteners to satisfy component-to-board, board-to-board, and board-to-chassis production-fastening needs. These fasteners are

A0100

Contextual Info: 65 & 100 Amp Filter Connector Female Power Connector ACARA ORDERING INFORMATION Crimp Termination Pre-wired Termination Part Number AFC065-PC/4AWG AFC065-PC/6AWG AFC065-PC/M25 AFC065-PC/M16 AFC100-PC/2AWG AFC100-PC/4AWG AFC100-PC/M35 AFC100-PC/M25 C/M25

mil-std-202, method 107

Abstract: BY121 mil-std-202 method 107 condition B 2052-3354-02 C17300 C1730
Contextual Info: .375 95mm REVISIONS DESCRIPTION .065 (1.7mm) o o REV DATE RELEASED APPROVED 12/1/93 102 DIA (2.6mm) (2 PLACES) .005 MIN (0.1mm) EMI GASKET I OSM JACK .250-36.UNS-2A .299 REF (7.6mm) ELECTRICAL ENVIRONMENTAL MECHANICAL Interface Dimensions MIL-STD-348 Nominal Impedance (Ohms) 50

Contextual Info: PRODUCT: 2410SFV Family Marked Surface Mount Fuse Very Fast Acting DOCUMENT: SCD27651 REV LETTER: F REV DATE: JANUARY 11, 2013 PAGE NO.: 1 OF 7 Specification Status: Released Termination Material: Copper, Ni, Tin Fuse Element: Copper/Copper alloy Body Material: Fiberglass/Epoxy

pin diagram of 741 op-amp

Abstract: op amp current booster using transistors op amp transistor current booster circuit transistor current booster circuit op amp 741 high voltage booster welding mosfet 741 OP Amp 8 pin can dc welding machine circuit diagram PB58
Contextual Info: 108&3
#0045&3
".1-*'*&34 PB58 • PB58A 551888"1&9.*$305&$)$0.



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 M I C R O T E C H N O L O G Y FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • HIGH OUTPUT CURRENT — 1.5A Continuous PB58) 2.0A Continuous (PB58A)

1n3346

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N3305 thru 1N3350 50 WATT SILICON ZENER DIODES Available in Voltages from 6.8 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by suffix R. (EX. 1N3305RB). • • •

in3314

Abstract: in3333 1N3307 IN3306 in3331 1N3327 1N3328 1N3326 1N3316 IN3305
Contextual Info: 1N3305 thru 1N3350 50 WATT SILICON ZENER DIODES Available in Voltages from 6.8 V thru 200 V POLARITY : FEATURES: Standard polarity anode to case. Reverse polarity cathode to case indicated by suffix R. (EX. 1N3305RB). • ZENER VOLTAGE 6 .8 TO 200 V •

PA02A

Abstract: PA02U PA02
Contextual Info: PA02••PA02A PA02A PA02 Product Innovation From 108&3
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".1-*'*&34 FEATURES • High power bandwidth — 350kHz • High slew rate — 20V/µs • Fast settling time — 600ns • Low crossover distortion — Class A/B • Low internal losses — 1.2V at 2A

PA76A

Abstract: PA74A 12v audio amplifier 60W single phase half bridge inverter schematic
Contextual Info: 108&3
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".1-*'*&34 PA74/76 • PA74/76A M I C R O T E C H N O L O G Y 551888"1&9.*$305&$)$0.



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 FEATURES • LOW COST • WIDE COMMON MODE RANGE — Includes negative supply • WIDE SUPPLY VOLTAGE RANGE

V10220

Abstract: V10470 smd inductors .33uH 20A V10271 smd inductors 4.7uH 20A V1047 IF transformers 10.7 mhz smd 222 150UH V10150C
Contextual Info: FILTER CHOKES, 1 to 25 AMP CA, CH, CV SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS SERIES CA AXIAL LEAD SPECIFICATIONS RCD Ty pe Induc. R ated D C D C R , SR F 1 K H z C urrent max Ω MH z , min C A1 C A2

IF transformers 10.7 mhz

Abstract: INDUCTORS 30 uh 20a
Contextual Info: FILTER CHOKES, 1 to 25 AMP CA, CH, CV SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS SERIES CA AXIAL LEAD SPECIFICATIONS RCD Type Induc. Rated DC DCR, SR F 1 KHz Current max Ω MHz , min C A1 C A2 C A3 A (Max.)

CV5220

Abstract: smd inductors 4.7uH 20A IF transformers 10.7 mhz CV103 CV20-4R7
Contextual Info: FILTER CHOKES, 1 to 25 AMP CA, CH, CV SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS SERIES CA AXIAL LEAD SPECIFICATIONS RCD Type Induc. Rated DC DCR, SR F 1 KHz Current max Ω MHz , min C A1 C A2 C A3 A (Max.)

IN3308

Abstract: ne002 in3314 IN3337 in3331 1N3307 1N3326 1N3328 1N3316 1N3327
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N3305 thru 1N3350 50 WATT SILICON ZENER DIODES Available in V oltages from 6.8 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by suffix R. (EX. 1N3305RB). • ZENER VOLTAGE 6.8 TO 200 V

ne002

Abstract: 1n4551 ir705 1N3307 1N3316 1N3326 1n4554 1N3340 IN3310 1N3309
Contextual Info: Back to Zener Diodes 1N3305 1N4549 1N3350 1N4556 'li'i NEW ENGLAND SEMICONDUCTOR 50 WATT SILICON ZENER DIODES Available in Voltages from 3.9 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by

IXBT2N250

Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM VCES = 2500V IC110 = 2A VCE sat ≤ 3.50V IXBH2N250 IXBT2N250 Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications VCES = 2500V IC110 = 2A VCE sat ≤ 3.1V IXGH2N250 IXGT2N250 TO-247 (IXGH) Symbol VCES Test Conditions Maximum Ratings TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGH2N250

Abstract: IXGT2N250 2N250
Contextual Info: Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = 2500V IC110 = 2A VCE sat ≤ 3.1V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 VCGR TJ = 25°C to 150°C, RGE = 1MΩ

P300232

Abstract: A070UD33LI1250 T300236 T300029 R300234 L300206 A070UD30KI100 A070UD33LI800 Q300233 B301071
Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 3x - 450V to 700 VAC Main characteristics 450 TO 700VAC / 63 TO 2800A Recognized Exceptionally low I2T, Watt losses. Non-magnetic construction, Highly reliable low voltage

1367-000-G91P

Abstract: 1367-000-G91P-21 1367-000-G911 1369-000-G000 1358-000-G051-34 1367-000-G91P-20 1332-000-K00A-1 1307-036-G001 k091 1301-031-K003
Contextual Info: SMA Series Coaxial Connectors ISO 9001 CERTIFIED 2003 ONLINE CATALOG Contents CLICK ON ANY LINE TO GO DIRECTLY TO THE INDICATED PAGE Navigation Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Specifications and interface dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

LT1178

Contextual Info: LT1178/LT1179 17µA Max, Dual and Quad, Single Supply, Precision Op Amps FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 17µA Max Supply Current per Amplifier 70µV Max Offset Voltage 250pA Max Offset Current 5nA Max Input Bias Current 0.9µVP-P 0.1Hz to 10Hz Voltage Noise

IXBH2N250

Abstract: IXBT2N250 2N250
Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM IXBH2N250 IXBT2N250 VCES = 2500V IC110 = 2A VCE sat ≤ 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ