700V 7.5A MOSFET Search Results

350v ZENER DIODE

Abstract: STW9NC70Z
Contextual Info: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STW9NC70Z

Abstract: TL 078
Contextual Info: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STW9NC70Z

Contextual Info: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

w9nk70

Abstract: p9nk70zfp w9nk70z p9nk70
Contextual Info: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on

w9nk70z

Abstract: P9NK70Z p9nk70zfp b9nk70z STP9NK70Z P9NK70 w9nk70z equivalent w9nk70 B9NK70Z-1 STW9NK70Z
Contextual Info: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on

w9nk70z

Abstract: P9NK70Z P9NK70ZFP B9NK70Z w9nk70z equivalent P9NK70 w9nk70 STP9NK70Z STW9NK70Z STP9NK70ZFP
Contextual Info: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS R DS on

700v 5A mosfet

Abstract: 700v 7.5A mosfet 5A 700V MOSFET 700v 4A mosfet
Contextual Info: SSFP9N70 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 700V Simple Drive Requirement ID25 = 7.5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

w9nk70z equivalent

Abstract: w9nk70z P9NK70Z B9NK70Z-1 w9nk70
Contextual Info: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS R DS on

8N65

Abstract: 700v 7.5A mosfet F 8N65 20/tubes
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN8N65FP Spec. No. : C727FP Issued Date : 2009.06.23 Revised Date : Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS ON : 0.95Ω(typ.) ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It

Contextual Info: ICE11N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.20Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE11N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.20Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •

FQA15N70

Abstract: 700v 5A mosfet
Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BV qss = 700V Advanced New Design R DS ON Avalanche Rugged Technology = 0.56Î2 lD = 15A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)

6.8 B2 zener

Contextual Info: STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1Ω - 6.8A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.2Ω 6.8 A STB7NC70Z-1 700V < 1.2Ω 6.8 A TYPICAL RDS(on) = 1Ω

Contextual Info: AOW15S60/AOWF15S60 600V 15A α MOS TM Power Transistor General Description Product Summary The AOW15S60 & AOWF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AOB15S60

Contextual Info: AOT15S60/AOB15S60/AOTF15S60 600V 15A α MOS TM Power Transistor General Description Product Summary The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOV15S60 600V 12A α MOS TM Power Transistor General Description Product Summary The AOV15S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area

SSM6N70

Contextual Info: 7 9 6 4 142 T fi DE § 7 ^ ^ 4 1 4 5 S AMSUN6 SEM I CONDUCTOR. I H C 0 DDS3 S4 7 98D | 05324 D N-CHANNEL POWER MOSFETS SSM6N70 FEATURES • Low RDS on at high voltage • Improved inductive ruggedness Excellent high voltage stability Fast switching times

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: AOK53S60 600V 53A α MOS TM Power Transistor General Description Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOK53S60 600V 53A α MOS TM Power Transistor General Description Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AC 440V Motor Speed Controller igbt circuit

Abstract: 220v DC MOTOR SPEED CONTROLLER EMI filter 20a 220v 400hz 600V igbt dc to dc boost converter AC motor current limiter board 220v dc motor speed control circuit SMCS6M40-10-1 SMCT6M40-10-1 SMC6G25-60-1 SMCS6G070-060-1
Contextual Info: Motor Controllers Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 146-1109 Total Motion Control Solutions www.sensitron.com/motorcontrollers.htm