702 Z TRANSISTOR Search Results

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

702 y TRANSISTOR

Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

rt9146

Abstract: rt914 WQFN-16L LCD VCOM WDFN-8L RICHTEK MARKING CODE 702 Z TRANSISTOR
Contextual Info: RT9146/7 20V, 1A, Rail-to-Rail Operational Amplifier General Description Features The RT9146/7 consists of a low power, high slew rate, single supply rail-to-rail input and output operational amplifier. z The RT9146 contains a single amplifier and RT9147

EL 14v 4c

Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
Contextual Info: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

MJE800

Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent
Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

OPB814

Abstract: OP8813 transistor k 425 OPB813S10 OPB817 C1969 MST6120 e/H21A1
Contextual Info: ÖUALITY T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E D 7MbböSl QQQ3b53 1 SLOTTED TRANSISTOR OPTOSWITCHES MST6XXX MST8XXX MST7XXX MST9XXX PACKAGE TYPES liL E D TYPE 6 E DESCRIPTION E The MSTXXXX series of optoswitohes is designed to allow the user maximum flexibility in his application.

transistor k 702

Abstract: TRANSISTOR S 802 kse800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

blv 33 transistor

Abstract: BLV25 rf 2222 vp1020 multilayer
Contextual Info: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;

DTC144WKA ROHM BY SMT

Abstract: DTC144 DTC144WU dtC144 transistor
Contextual Info: h 7 > V \X £ /'Transistors DTC144 WE/DTC144 WUA/DTC144 WKA DTC144WE/DTC144WU A/DTC144WKA Digital Transistors Includes Resistors h7>y Z ' f y ^-/Transistor Switch fl.Jg-^-;±EÜ]/Dimensions (Unit : mm) • w * 1) A 'i'77 :xffl<7)iêjjî;£p*3jK LT i'-S/c

transistor LB 13003 C

Abstract: t13003 T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j e 13003 transistor E 13003 TRANSISTOR transistor 13003 13003 j TRANSISTOR
Contextual Info: S G S -T H O M S O N E fi M lF3m i g ? [ M 0igS S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:

Contextual Info: Central" 2N7002 S e m ic o n d u c to r C o rp . N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

Contextual Info: r T T N I / I A dvanced 1 ALD1702A/ALD1702B ALDI 702/ALD1703 L in e a r D e v ic e s , I n c . 5V RAIL TO RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The A LD 1702/A LD 1703 is a monolithic operational amplifier intended primarily for a wide range of analog applications in +5V single power

transistor marking s72

Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
Contextual Info: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW

D965

Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
Contextual Info: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay

BUX23

Abstract: SGS-Thomson bux23 transistor bux23
Contextual Info: £ Z 7 ^ 7# S G S -T H O M S O N noû^ ûm [i ir^ io©s B U X 23 NPN SILICON TRANSISTOR D E S C R IP T IO N High speed, high current, high power NPN transis­ tor intended for use in switching and amplifier appli­ cations. T TO-3 ABSOLUTE M AXIMUM RATINGS

ALD1702

Contextual Info: E A dvanced ALD1702A/ALD1702B ALD1702/ALD1703 L iN E A R D e vic es , In c . 5V RAIL TO RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1702/ALD1703 is a mqnqlittiic operational amplifier intended primarily for a wide range of analog applications in +5V single power

transistor+2146

Contextual Info: MDS-GN-650 ELM Rev 1 MDS-GN-650ELM 650 Watts - 65 Volts, Mode-S ELM Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The MDS-GN-650ELM is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for Mode-S ELM

Contextual Info: 2729GN-500 Rev 1 2729GN-500 500 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-500 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 12dB gain, 500 Watts

2SC4775

Abstract: 701b7 702 P TRANSISTOR 702 y TRANSISTOR 2SC4776M
Contextual Info: h ~7> V 7 2 /T ra n s is to rs 2S C 4775/2S C 4776M /2S C 4777/2S C 4778 2 S C 4 7 7 5 /2 S C 4 7 7 6 M x t: * * y 7 7“U•-*% NPN y 1J □ > h7 > y 7 £ 2 3 Q 4 7 7 7 /2 S C 4 7 7 8 Epitaxial Planar NPN Silicon Transistor - « 'J 'O T * M /G e n e r a l Small Signal Amp.

1702A

Contextual Info: r ^ T N I / I A dvanced 1 ALD1702A/ALD1702B ALDI 702/ALD1703 L in e a r D e v ic e s , I n c . 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1702/ALD1703 is a monolithic operational amplifier intended primarily for a wide range of analog applications in +5V single power

5UTA

Abstract: 702 Z TRANSISTOR SCN5 SD1526 SD1526-01 SD1526-1 TACAN transistor
Contextual Info: H ftw 'n m n r-t S^ - * n . n _->m 140 Commerce Drive È V I Ê C r O S G iT I Ê Montgomeryville, PA 18936-1013 P ro g re s s P o w e re d b y T e c h no log y Tel: 215 631-9840 SD1526-1 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS • DESIGNED FOR HIGH POWER PULSE IFF,

Contextual Info: • 140 Com merce Drive Monígomeryvüfe, PA 18936-1013 SD1526-1 T e l: 2 1 S 631-9840 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS * DESIGNED FOR h ig h POWER p u l s e ¡FP DME. TACAN s fs.-OW {iypi i f f 1030- 1090M Hx • 5 OW W (i) O M E 1025-1150MHJ

transistor c830

Contextual Info: P ow er _ l - 3 3 - O f i 2 N 170 0 HARR IS S E M I C O N D S E CT OR File Number 141 B7E D • M 3 0 2 2 7 1 G G l ^ f l Q ^ ■ HAS Silicon N-P-N Power-Switching Transistor TERMINAL DESIGNATIONS

Contextual Info: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC