70A DIODE Search Results

70HF100

Abstract: 70HF120 70HF140 70HF160 70HF20 70HF40 70HF80 70HFR10 70HFR100 70HFR140
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-365-36 70HF100 diod 1000V 70A 70-365-44 70HF120 diod 1200V 70A 70-365-50 70HF140 diod 1400V 70A 70-365-69 70HF160 diod 1600V 70A

D70N03L

Abstract: D70N03L-1 JESD97 STD70N03L STD70N03L-1
Contextual Info: STD70N03L STD70N03L-1 N-channel 30V - 0.0059Ω - 70A - DPAK / IPAK STripFET III Power MOSFET General features • Type VDSS RDS on ID STD70N03L 30V <0.0073Ω 70A STD70N03L-1 30V <0.0073Ω 70A ■ Conduction losses reduced ■ Switching losses reduced

0N06

Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.

P70NF

Abstract: B70NF03L STB70NF03L-1 JESD97 STB70NF03L STP70NF03L
Contextual Info: STB70NF03L STP70NF03L - STB70NF03L-1 N-channel 30V - 0.0075Ω - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB70NF03L 30V < 0.0095Ω 70A STP70NF03L 30V < 0.0095Ω 70A STB70NF03L-1 30V < 0.0095Ω

STD70N03L-1

Abstract: D70N03L D70N03L-1 JESD97 STD70N03L
Contextual Info: STD70N03L STD70N03L-1 N-channel 30V - 0.0059Ω - 70A - DPAK / IPAK STripFET III Power MOSFET General features • Type VDSS RDS on ID STD70N03L 30V <0.0073Ω 70A STD70N03L-1 30V <0.0073Ω 70A ■ Conduction losses reduced ■ Switching losses reduced

Contextual Info: SANSHA ELECTRIC MFG CO 5bE D OODDMMq 3E0 M S E I I J DIODE MODULE DW F R 70A T-u-oi DW F(R)70A is a non-isolated diode module designed for 3 phase rectification. • • • • If(av) = 70A, V rrM = 400V Easy Construction with Joint-Cathode(F)Type and Joint-Anode(R)Type.

Contextual Info: FZ06NPA070FP preliminary datasheet flowNPC 0 600V/75A & 70A PS* Features flow0 12mm housing ● *PS: 70A parallel switch 60A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● SiC buck diode ● low inductance layout Target Applications

General Electric thyristor

Abstract: MFC55A MTC55A MFC55 thyristor battery charger circuit with notes
Contextual Info: Thyristor/Thyristor Module Thyristor/Diode Module MTC55A/70A MFC55A/70A MECHANICAL DESCRIPTION The MTC, MFC module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with

RFP70N03

Contextual Info: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs [ /Title RFP7 0N03, RF1S7 0N03S M /Subject (70A, 30V, 0.010 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB

Contextual Info: RFK70N06 Semiconductor 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET September 1998 Features Description • 70A,60V • 175°C Operating Temperature The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­

diode 70A

Abstract: 400v 70a
Contextual Info: DIODE MODULE DWF R 70A30/40 DWF R 70A is a non-isolated diode module designed for 3 phase rectification. IF AV 70A, VRRM 400V Easy Construction with Joint-Cathode F Type and Joint-Anode R type. Non-isolated. Mounting Base as terminals. High Surge Capability

Contextual Info: DIODE MODULE DWF R 70A30/40 DWF R 70A is a non-isolated diode module designed for 3 phase rectification. IF AV 70A, VRRM 400V Easy Construction with Joint-Cathode F Type and Joint-Anode R type. Non-isolated. Mounting Base as terminals. High Surge Capability

Contextual Info: DIODE MODULE DWF R 70A D W F(R )7 0 A is a non-isolated diode module designed for 3 phase rectification. • If(av>= 70A, Vbbm = 400V • Easy Construction with Joint-Cathode(F)Type and Joint-Anode(R)Type. • Non-isolated. (Mounting Base as terminals.) • High Surge Capability

Contextual Info: FZ06NPA070FP01 preliminary datasheet flowNPC 0 600V/75A & 70A PS* Features flow0 12mm housing ● *PS: 70A parallel switch 60A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● low inductance layout Target Applications Schematic

FSJ160D

Abstract: FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3 2E12 Rad hard MOSFETS in Harris
Contextual Info: FSJ160D, FSJ160R Semiconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

RFP70N06

Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω

B70NF3LL

Abstract: JESD97 STB70NF3LL STB70NF3LLT4
Contextual Info: STB70NF3LL N-channel 30V - 0.0075Ω - 70A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB70NF3LL 30V < 0.0095Ω 70A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced

fga70n33

Contextual Info: FGA70N33BTD tm 330V, 70A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.7V @ IC = 70A Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP

MDE1751

Abstract: trench mosfet
Contextual Info: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ General Description Features The MDE1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in

75339P3

Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery

16E-5

Abstract: HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3
Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 Features Description • 70A, 55V • Ultra Low On-Resistance, rDS ON = 0.012Ω • Diode Exhibits Both High Speed and Soft Recovery

AN9321

Abstract: AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
Contextual Info: RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs Features • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

RFP70N06

Contextual Info: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

FDB8444TS

Abstract: 439MJ
Contextual Info: FDB8444TS N-Channel PowerTrench MOSFET with Temperature Sensor tm 40V, 70A, 5mΩ Features Applications „ Typ rDS on = 3.8mΩ at VGS = 10V, ID = 70A „ Automotive Engine Control „ Typ Qg(TOT) = 130nC at VGS = 10V „ Powertrain Management „ Low Miller Charge