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    71V124 Search Results

    71V124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71V124SA10PHG8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA12PHGI8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA15PHG8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA15YGI8 Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
    71V124SA12PHG Renesas Electronics Corporation 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Visit Renesas Electronics Corporation
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    71V124 Price and Stock

    Renesas Electronics Corporation 71V124SA12TYG

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey 71V124SA12TYG Tube 478 1
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    Renesas Electronics Corporation 71V124SA12TYGI

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey 71V124SA12TYGI Tube 345 1
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    Renesas Electronics America 71V124SA12TYGI Tube 345 1
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    Renesas Electronics Corporation 71V124SA10TYG

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey 71V124SA10TYG Tube 265 1
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    Mouser Electronics 71V124SA10TYG 345
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    Renesas Electronics America 71V124SA10TYG Tube 265 1
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    Renesas Electronics Corporation 71V124SA15TYG

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey 71V124SA15TYG Tube 23 1
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    Renesas Electronics America 71V124SA15TYG Tube 23 1
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    Renesas Electronics Corporation 71V124SA15TYG8

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey 71V124SA15TYG8 Cut Tape 12 1
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    71V124SA15TYG8 Reel 1,000
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    Mouser Electronics 71V124SA15TYG8 988
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    71V124 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    71V124SA Integrated Device Technology 3.3V128K x 8 Static RAM Center Pwr & Gnd Pinout Original PDF
    71V124SA10PHG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10PHG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10PHGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10PHGI8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA10TYG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA10TYG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA10YG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA10YG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12PHG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12PHG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12PHGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12PHGI8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32TSOP II Original PDF
    71V124SA12TYG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12TYG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12TYGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12TYGI8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12YG Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12YG8 Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF
    71V124SA12YGI Integrated Device Technology Integrated Circuits (ICs) - Memory - IC SRAM 1M PARALLEL 32SOJ Original PDF

    71V124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PB44

    Abstract: PRODUCT CHANGE NOTIC (PCN) 9902-02 topmark 71124 PB32 71016s PJ32 PRODUCT CHANGE NOTIC PCN 9902-02
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT CHANGE NOTIC PCN PCN #: SR 9902-02 DATE: 2/15/99 Product Affected: 71V016S, 71016S, 71V124S, 71124S in PB44, PB32 and PJ32 packages Manufacturing Location Affected: N/A


    Original
    PDF 71V016S, 71016S, 71V124S, 71124S FRC-1509-01 QCC-1795 PB44 PRODUCT CHANGE NOTIC (PCN) 9902-02 topmark 71124 PB32 71016s PJ32 PRODUCT CHANGE NOTIC PCN 9902-02

    71V124SA

    Abstract: 71V016SA
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 6/1/99 PCN #: SR9905-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: NA 8/30/99 Date Effective:


    Original
    PDF SR9905-02 71V016S, 71V124S, 71V016SA, 71V124SA FRC-1509-01 QCC-1795 71V124SA 71V016SA

    Reliability product sheet

    Abstract: 71V124S15Y
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR 9905-03 DATE: Product Affected: 71V124S15Y , 71V124S20Y 6/1/99 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark "N" Die Revision on Top Mark


    Original
    PDF 71V124S15Y 71V124S20Y FRC-1509-01 QCC-1795 Reliability product sheet 71V124S15Y

    QS001

    Abstract: 71V124SA
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 11/30/00 PCN #: SR0011-05 DATE: Product Affected: 71V016SA , 71V124SA Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #:


    Original
    PDF SR0011-05 71V016SA 71V124SA QS001 71V124SA

    71V124SA

    Abstract: 71V016SA
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 5/3/00 PCN #: SR0003-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: Date Effective: 8/3/00 Contact:


    Original
    PDF SR0003-02 71V016S, 71V124S, 71V016SA, 71V124SA 71V016S 71V124SA 71V016SA

    H9723

    Abstract: h9740 l9718 L9712 L9709 L9727 T9934 l9731 L9706 l9735
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1998 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1998 TABLE OF CONTENTS Section I: Introduction Section II:


    Original
    PDF 9808M 9806M 9807M H9723 h9740 l9718 L9712 L9709 L9727 T9934 l9731 L9706 l9735

    71V124SA

    Abstract: 71V124 IDT71V124
    Text: 71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to


    Original
    PDF IDT71V124 15/20ns 32-pin IDT71V124 576-bit 71V124SA. S-0004 x4033 71V124SA 71V124

    Untitled

    Abstract: No abstract text available
    Text: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity


    Original
    PDF IDT7MMV4101 IDT7MMV4101 IDT71V124) 7MMV4101 x4033

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original
    PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    71V124SA

    Abstract: 71V124 IDT71V124
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124 Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to


    Original
    PDF IDT71V124 15/20ns 32-pin IDT71V124 576-bit 71V124SA. S-0004 x4033 71V124SA 71V124

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    PDF IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit

    7MMV4101S10BG

    Abstract: IDT71V124 IDT7MMV4101
    Text:  PRELIMINARY IDT7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns


    Original
    PDF IDT7MMV4101 IDT7MMV4101 IDT71V124) 7MMV4101 7MMV4101S10BG IDT71V124

    IDT71V124

    Abstract: IDT71V124SA 71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    PDF IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA 71V124SA

    IDT71V124

    Abstract: IDT7MMV4101
    Text: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity


    Original
    PDF IDT7MMV4101 IDT7MMV4101 IDT71V124) 7MMV4101 IDT71V124

    71v124

    Abstract: IDT71V124 IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    PDF IDT71V124SA 10/12/15/20ns 12/15/20ns 32-pin 400-mil IDT71V124 576-bit x4033 71v124 IDT71V124SA

    71016S20PHG8

    Abstract: 71016S15YG 71256SA15Y 71256SA20YI 71256-sa15y 71256sa25tp 7164 71V124SA12YGI 6116SA25TPGI 71V424L10PHG
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08R1 29-Apr-2010 Last Buy Deadline for Submission of Order:


    Original
    PDF SR-09-08R1 29-Apr-2010 26-Jul-2010 25-Oct-2010 71V424YL15PHI 71V424YL15PHI8 71V424YS10PH 71V424YS10PH8 71V424YS10PHI 71016S20PHG8 71016S15YG 71256SA15Y 71256SA20YI 71256-sa15y 71256sa25tp 7164 71V124SA12YGI 6116SA25TPGI 71V424L10PHG

    71256-sa15y

    Abstract: 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08 Last Buy Deadline for Submission of Order:


    Original
    PDF SR-09-08 31-Jan-2010 31-Jan-2011 30-Apr-2011 Fa024 71V424YL15PHI 71V424YL15PHI8 71V424YS10PH 71V424YS10PH8 71256-sa15y 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI

    SO32-3

    Abstract: SO-323 IDT71V124 IDT71V124SA SO32
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    PDF IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit SO32-3 SO-323 IDT71V124SA SO32

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout 71V124SA Features Description ◆ The 71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative


    Original
    PDF IDT71V124SA IDT71V124 576-bit

    71v416l10

    Abstract: 71256SA15Y 71V424S15PHGI8 71V416S12PHGI8 71V416-S12PHG 71256-SA12YG 71V424S15YGI 71256SA12YG 71V35761SA200BG8 71V416L10PHGI8
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-10-07 Last Buy Deadline for Submission of Order:


    Original
    PDF SR-10-07 31-Oct-2011 30-Jan-2012 01-Nov-2010 71V416YS15BEI8 71V416YS15YG 71V416YS15YG8 71V424YS12YGI 71V424YS12YGI8 71V424YS15PHGI 71v416l10 71256SA15Y 71V424S15PHGI8 71V416S12PHGI8 71V416-S12PHG 71256-SA12YG 71V424S15YGI 71256SA12YG 71V35761SA200BG8 71V416L10PHGI8

    L9939

    Abstract: B897 k9920 L9924 k1917 JESD22-B100 K9928 K2837 P9848 h9910
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II:


    Original
    PDF --D28 723646Y Y12142 77105Z Y12171G 65V500A P27999G 11V256YY B10996 63244L L9939 B897 k9920 L9924 k1917 JESD22-B100 K9928 K2837 P9848 h9910

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY 71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


    OCR Scan
    PDF IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit

    s0324

    Abstract: No abstract text available
    Text: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY 71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.


    OCR Scan
    PDF IDT71V124 12/15/20ns Plastic32-pin 32-pin IDT71V124 576-bit 71V124 400-mil S032-3) s0324

    S0324

    Abstract: S0323
    Text: PRELIMINARY 71V124 o Integrated De o 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED EC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle tim es


    OCR Scan
    PDF IDT71V124 12/15/20ns Plastic32-pin 32-pin 576-bit 200mV 71V124 400-mil S0324 S0323