72 038 Search Results

Contextual Info: MOSEL VITELIC V437216S04V C TG-10PC 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • The V 437216S04V (C )TG -1 OPC memory module is organized 16,777,216 x 72 bits in a 168 pin dual in line memory module (D IM M ). The 1 6 M x 72 mem­

DM-60

Contextual Info: 2, 4, 8 M E G X 72 N O N B U F F E R E D D R A M DIMMs MICRON I TECHNO LO GY, INC. MT9LD272A X MT18LD472A(X) MT36LD872A(X) DRAM MODULE FEATURES * * * * * * * * * * * JED EC eight CAS#, EC C pinout in a 168-pin, dual-inline memory module (D IM M ) 16M B (2 Meg x 72), 32MB (4 Meg x 72),

Contextual Info: Extract from the online catalog HC-B 32-SMQ-72/M1PG29 Order No.: 1775703 Box mounting base, with double locking latch, height 72 mm, with screw connection, 1x Pg29 Product notes

Contextual Info: MOSEL VITELIC V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100AND 100 M HZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: 9 NO. OF CIRC. "XX” DIM. "B " DIM. "A" 8 MATERIAL NO. STANDARD MATERIAL NO. ( -10A OPTION) 7 MATERIAL NO. (-72 OPTION! MATERIAL NO, ( -10A-72 O PT .) 02 10.2 (.401 5.00 I . 197) 398503102 398503202 398503302 398503502 03 15.2 1.60) 10.00 1.394) 398503103

THMY7232G1EG-80

Abstract: 3DE3 D036 SA247 M9101
Contextual Info: TOSHIBA THMY7232G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7232G1EG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

PC100U-222-612-A

Abstract: V437332S04VTG-10PC PC100U VTG-10PC
Contextual Info: M OSEL VITELIC V437332S04VTG-10PC 3.3 VOLT 32M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 33,554,432 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 128Mbit, 16M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: Cable Interface Units RS VERT8 LPK2 Distributors for 8, 16 and 72 positive and negative potentials RS VERT16 LPK2 RS LPK3/144 VERT • Adapts 2 supply connections to 8/16 or 72 potential distribution terminals • Potential distributor designed as tw o- or

1gb 2rx8 pc2-6400u-666-12-e0

Abstract: pc2-6400u-666 1gb 2rx8 pc2-6400u-666 PC2-3200U-333-11-A1 1gb 2rx8 pc2-6400u-666-12 512MB 1Rx8 PC2-3200U PC2-4200U-444-11-C1 512MB 1Rx8 PC2 4200u 444 pc2-6400u-666-12-e0 DDR2 SDRAM
Contextual Info: Data Sheet, Rev. 1.3, Sep. 2005 HYS64T[32/64]0[01/20]HU–2.5–A HYS[64/72]T[32/64]0[00/01/20]HU–[3/3S]–A HYS[64/72]T[16/32]00[0/1]HU–3.7–A HYS[64/72]T[16/32]00[0/1]HU–5-A 240-Pin Unbuffered D D R 2 S D R A M M o d u l e s DDR2 SDRAM UDIMM SDRAM

Contextual Info: MOSEL VITELIC V43728S04VTG 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 AND 100 M H Z SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: MOSEL VITELIC V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 AND 100 M H Z SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

1gb 2rx8 pc2-6400u-666-12-e0

Abstract: 1gb 2rx8 pc2-6400u-666-12 pc2-6400u-666-12-e0 PC2-6400U-666-12-D0 PC2-4200U-444-11-a1 pc2-5300u-555 PC2-3200U-333-11-A1 5300U 1gb 2rx8 pc2-6400u-666 pc2-6400u-666
Contextual Info: Data Sheet, Rev. 1.2, Mai. 2005 HYS64T[32/64]0[01/20]HU–2.5–A HYS[64/72]T[32/64]0[00/01/20]HU–[3/3S]–A HYS[64/72]T[16/32]00[0/1]HU–3.7–A HYS[64/72]T[16/32]00[0/1]HU–5-A 240-Pin Unbuffered D D R 2 S D R A M M o d u l e s DDR2 SDRAM UDIMM SDRAM

Contextual Info: PRELIMINARY M IC ^ C a iü lN I MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K, 64K x 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM SYNCHRONOUS SRAM MODULE 256KB/512KB, 3.3V, PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES • • • • PIN ASSIGNMENT Front View

Contextual Info: MOSEL V I T E L I C V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 AND 100 MHZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in

Contextual Info: MOSEL V I T E L I C V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 AND 100 MHZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in

Contextual Info: M O S E L V IT E L IC V437332S04VTG-75 3.3 VOLT 32M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 33,554,432 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 128Mbit, 16M x 8

Contextual Info: M O S E L V IT E L IC V437316S04VTG-10PC 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 16M x 8 SDRAM in

Contextual Info: TO SH IB A THMY7216H1EG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216H1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

PD4516821G5

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454AC724 4 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : /¿PD4516821 are assembled.

k2718

Contextual Info: M OSEL V I T E L I C V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 AND 100 M H Z SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in

Contextual Info: M O SEL V ITELIC V43728S04V C TG-75 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM ECC DIMMs ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: MOSEL V IT E L IC V43728S04VTG 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 AND 100 M H Z SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: M O S E L V IT E L IC V437316S04VTG-75 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM ECC DIMMs ■ Utilizes High Performance 128 Mbit, 16M x 8