720UA Search Results

TDA5255

Abstract: AG1129 EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES IC TX 434 pll fsk MODULATOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 rx 434 TRANSMITTER TX-434 xtal 16mhz 8pf P-TSSOP-38-1
Contextual Info: P re liminary Spe c ification, Versio n 1.1, 2 002-11-28 TDA5255 E1 ASK/FSK 434MHz Wireless Transceiver Wireless Components N e v e r s t o p t h i n k i n g . Edition 2002-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

Marking P71

Abstract: DDTB123EU DDTB123YU P72 c marking code P60 DDTB113EU DDTB113ZU DDTB114EU DDTB122JU DDTB133HU
Contextual Info: DDTB xxxx U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR NEW P PR R OD UC UCT T Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2 Lead Free/RoHS Compliant (Note 2)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-8L-G Plastic-Encapsulate Transistors-MOSFETS CJZM718 DFNWB3×2-8L-G PNP Transistor and N-ch MOSFET DESCRIPTIONS The CJZM718 is Integrated a 20V N-ch MOSFET with low on-state resistance, and an independently connected PNP transistor

CHDTA114GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

EvalBoard

Abstract: TDA5252 lna vco mixer quadrature 2GHz pll fsk MODULATOR 50E3 TDA5250 TDA5255 300mhz demodulator dip fsk CV182 receiver tda 1072
Contextual Info: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.

FLM2023L-30F

Abstract: EUDYNA flm2023l-30f ED-4701 26dBm
Contextual Info: FLM2023L-30F L-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.0dBm Typ. ・High Gain: G1dB=13.0dB(Typ.) ・High PAE: ηadd=43%(Typ.) ・Broad Band: 2.025~2.285GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

sot-23 marking code 20

Abstract: DDTC114GCA DDTC115GCA DDTC124GCA DDTC144GCA J-STD-020D 250MHz marking code ca
Contextual Info: DDTC R2-ONLY SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PROD UCT Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA)

SOT-346

Abstract: INVERTER CIRCUIT Ic 346 marking eka
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC114GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346

Contextual Info: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.

MDT10P57

Abstract: PA34 PA52 PB55
Contextual Info: MDT10P57 1. General Description Power-on Reset This EPROM-Based 8-bit micro-controller uses Power edge-detector Reset a fully static CMOS technology process to Sleep Mode for power saving achieve higher speed and smaller size with the 5 types of oscillator can be selected by

MT3S20P

Contextual Info: MT3S20P 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S20P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.45dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11dB(標準) (@ f=1GHz)

MT3S20R

Contextual Info: MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.45dB Typ. (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz)

MT3S22P

Abstract: T1600
Contextual Info: MT3S22P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S22P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.5dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz)

MT3S20P

Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini

TDA5250

Abstract: smiq PLL FSK DEMODULATOR correlator 300MHz SPI GPIB FSK modulator and demodulator sma e 1017 Schematics 5250 433mhz ask remote control IC TDA 2002 amplifier circuit
Contextual Info: Da ta S heet, Versio n 1.7, 2 007-02-26 TDA5250 D2 ASK/FSK 868MHz Wireless Transceiver Wireless Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 3/7/07.

DTC114GKA

Abstract: DTC114GUA T106 T146
Contextual Info: 100mA / 50V Digital transistors with built-in resistor DTC114GUA / DTC114GKA  Applications Inverter, Interface, Driver  Dimensions (Unit : mm) DTC114GUA 2.0 0.3 0.7 2.1 (3) 1.25 (1) (2) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 0.1Min.  Features

ice3ar0680jz

Abstract: DEMO BOARD ice3ar0680jz 631V AN-EVAL3AR0680JZ opto coupler protction circuit B32922C3334M000 BEER28-1110CPFR DSP-301N-S00B DIP7 SMPS PC40EER28-Z
Contextual Info: Application Note, V1.1, Aug 2010 AN-EVAL3AR0680JZ 30W 12V SMPS Evaluation Board with CoolSET F3R80 ICE3AR0680JZ Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2010-08-11 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,

Contextual Info: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 T6 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e| =13 dB typ. (@ f = 1 GHz) 0.166±0.05 Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)

DDTB123EU

Abstract: DDTD (xxxx) U
Contextual Info: DDTB xxxx U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW P PR R OD UC UCT T Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2

Contextual Info: DDTC R2-ONLY SERIES E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistor, R2 only

MT3S19TU

Contextual Info: MT3S19TU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19TU ○ VHF～UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 3 1 UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準 2 絶対最大定格 (Ta = 25°C)

MT3S21P

Contextual Info: MT3S21P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S21P ○ VHF～UHF 帯 低雑音・低歪み増幅用 特 単位: mm 長 • 雑音特性が優れています。:NF=1.55dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11dB (標準) (@ f=1GHz)

CHDTD114GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTD114GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .103 2.64 .086 (2.20) .028 (0.70) .020 (0.50)

CHDTC114GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC114GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .103 2.64 .086 (2.20) .028 (0.70) .020 (0.50)