724397 Search Results

12v relay 8 pin diagram

Contextual Info: H April 1999 C - 5 5 File Num ber 2 B 1 4127.2 SLIC Subscriber Line Interface Circuit Features The Harris SLIC incorporates many of the BORSHT function on a single 1C chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is

pinout lcd

Contextual Info: HI3197 Semiconductor Data Sheet October 1998 10-Bit, 125 MSPS D/A Converter Features • Resolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Bits The HI3197 is a high-speed D/A converter which can perform the multiplexed input of the two system 10-bit data.

traveler

Contextual Info: FSL110D, FSL110R Semiconductor Data Sheet 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s October 1998

Contextual Info: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

smd transistor NG

Contextual Info: FSYE13A0D, FSYE13A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e

10N120BND

Abstract: 10n120bnd equivalent
Contextual Info: HGTG10N120BND Semiconductor J an u ary 1999 D ata S h eet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best

Contextual Info: H M P 8 1 7 0 , H M P 8 1 7 1 , Data Sheet H M P 8 1 7 2 , May 1999 H M P 8 1 7 3 File Number 4284.5 NTSC/PAL Video Encoder Features The HMP8170, HMP8171, HMP8172, and HMP8173 NTSC and PAL encoders are designed for use in systems requiring the generation of high-quality NTSC and PAL video.

Contextual Info: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a

EM- 534 motor

Contextual Info: HGTG18N120BN Semiconductor Data Sheet November 1998 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

Contextual Info: FSYE430D, FSYE430R June 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically designed for

Contextual Info: FSS923A0D, FSS923A0R June 1999 D ata S h eet 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.

Contextual Info: HUF76105DK8 Semiconductor Data Sheet October 1998 Features 5A, 30 V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AM79R70

Abstract: HC55183 HC55184 PBL3860 harris slic
Contextual Info: This data sheet has been combined with document FN4519 Please see HC5518X FN4519 Semiconductor August 1998 PRELIMINARY Short Loop Ringing SLIC 55184) thor () Key features across these products include: Low power bject ywords (Harris Semiconductor, Telecom, SLICs,

hin213eca

Abstract: HIN202E HIN203E HIN205E HIN206E HIN235E HIN241E HIN238
Contextual Info: HIN202E thru HIN241E S em iconductor Data Sheet December 1998 File Number 4315.3 Features +/-15kV, ESD-Protected, +5V Powered, RS-232 Transmitters/Receivers • High Speed ISDN C o m p a tib le . 230kbits/s • ESD Protection for RS-232 I/OPins to ±15kV IEC1000

HI5702

Abstract: HI5703 HI5703EVAL HI5703KCB HI5746 HI5767 HI57
Contextual Info: NDS Semiconductor OMME C E R ARRIS 46KCB NS, H G 57 I S E D OR HI Data Sheet November 1998 W B E C N 4 / FOR 5767 I H E TH HI5703 File Number 3950.7 10-Bit, 40 MSPS A/D Converter Features The HI5703 is a monolithic, 10-bit, analog-to-digital converter fabricated in Harris’ BiCMOS process. It is

Contextual Info: DG408, DG409 Data Sheet Single 8-Channel/Differential 4-Channel, CMOS Analog Multiplexers The DG408 Single 8-Channel, and DG409 Differential 4-Channel monolithic CMOS analog multiplexers are drop-in replacements for the popular DG508A and DG509A series devices. They each include an array of eight analog

HI1-0381-2

Abstract: HI1-0381-5 HI1-0384-2 HI2-0381-2 HI2-0381-5 HI3-0381-5 HI-381 HI-387
Contextual Info: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark HI-381 thru HI-387 UCT TE PROD E PRODUCT OBSOLE ITUT E SUBST -7747 L IB S S O P Sheet cations 1-800-442 FOR AData li p m p is.co al A call Centr il: centapp@harr

76105DK8

Contextual Info: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

52VA

Abstract: AN9824 HC55181 HC55180 HC55180CIM HC55182 HC55183 HC55184
Contextual Info: R M S HC55180, HC55181, HC55182, HC55183, HC55184 S e m iconductor October 1998 Data Sheet Extended Reach Ringing SLIC Family File Number Features The RSLIC18 family of ringing subscriber line interface circuits RSLIC supports analog Plain Old Telephone Service (POTS) in

r4543

Abstract: transistor smd Y2
Contextual Info: ACS11MS S em iconductor N o v e m b e r 1998 D a ta S h e e t Radiation Hardened Triple 3-Input AND Gate The Radiation Hardened A C S 11 MS is a Triple 3-input AND Gate. When all three inputs to one of the gates are at a HIGH level, the corresponding Y output will be HIGH. A LOW

20N120CND

Contextual Info: HGTG20N120CND Semiconductor D a ta s h e e t 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

Contextual Info: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

1 L 0380 R

Contextual Info: FSYA150D, FSYA150R Semiconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: HI5766 Semiconductor October 1998 Data Sheet File Number 4130.4 10-Bit 60 MSPS A/D Converter Features The HI5766 is a monolithic, 10-bit, analog-to-digital converter fabricated in a CMOS process. It is designed for high speed applications where wide bandwidth and low