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    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEHICOND/DISCRETE 'IS NPN DIFFUSED JUNCTION i - 33. D ËT | 725GS33 □oo4cmb j / T A B L E 1 - N P N S IL IC O N D IF F U SE D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a


    OCR Scan     		PDF 725GS33 2N6103 O-220 2N3055 FGT3055 2N3442 2N6101 T0-220 2N6099

    zvn2110

    Abstract: G156 ZVN2110L G158
    Text: PLESSEY SEMCOND/MSCRETE 7220533 PLESSEY ìT^ C ON D / DI S C R E T E S E M I C eI 7250533 0DQSt,S3 1 F 9 5D 05653 -o7 N-channel enhancement mode vertical DMOS FET ZVN2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •


    OCR Scan     		PDF ZVN2110 ZVN2110A* ZVN2110B* ZVN2110 G-158 725GS33 G-159 722Q533 G156 ZVN2110L G158