73060 Search Results

73K224L-CP

Abstract: QAM modulator demodulator a33k 73K224lcp 73K224L-CH
Contextual Info: SSI 73D2240 M m M b n V.22bis 2400 Bit/s Modem Device Set s Advance Information July, 1990 FEATURES DESCRIPTION Multi-mode V.22bls/V.22/V.21 & Bell 212A/103 com­ patible device set for Intelligent modem designs The SSI 73D2240 is a set of two ICs that provide the

2Sh13

Contextual Info: A D E - 2 0 8 - 2 8 6 Z 2SH13 Silicon N-Channel IGBT 1 St. Edition HITACHI Application High speed power switching Features • High speed switching • Low on saturation voltage Table 1 Absolute Maximum Ratings (Ta = 25^C) Item Sym boi Ratin gs Unit Collector to emitter voltage

581-250-00

Contextual Info: ADE-207-062 HD153081 Hard Disk Drive Programmable Filter/Frequency Synthesizer HITACHI Preliminary Mar. 1992 differentiation equalizer is provided. T h e g a in a t th e c u to f f fre q u e n c y c a n be boosted by up to 15 dB. The group delay characteristics w hen boost is

Contextual Info: A D E - 2 0 8 - 2 9 0 Z 2SH17 Silicon N-Channel IGBT 1 st. Edition Feb. 1995 HITACHI Application TO-22QAB High speed power switching Features • High speed switching • Low on saturation voltage 1. G ate 2. C o lle cto r 3. E m itter T ab le 1 A b so lute M a x im u m R atin g s (Ta = 2 5 ^ C )

67s18258

Contextual Info: for spcc. confirrnation SUN HM67S18258 Series 262144 words x 18 bits Synchronous Fast Static R A M P ro d u c t P review Rev. 3 HITACHI Features Dec. 10 1996 Pin A rrangem ent 3,3 V ± 5 % Operation LV C M O S C om patible Input and Output 1 2 ro O o OOo

Intronic

Contextual Info: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag

Contextual Info: HB56D836IB Series 8,388,608-W ord x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D836IB is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS) sealed in SOJ package. An outline of the HB56D836IB is

N-Channel IGBT

Contextual Info: A D E - 2 0 8 - 2 9 4 Z 2SH21 Silicon N-Channel IGBT 1 st. Edition Feb. 1995 HITACHI Application TO-3P High speed power switching Features • High speed switching • Low on saturation voltage 1. Gate 2. Collector 3. Emitter Table 1 Absolute M axim u m Ratings (Ta = 25^C)

Contextual Info: for spec. confirmation SUN HM67S36130 Series 131072 words x 36 bits Synchronous Fast Static RAM Product Preview Rev. 3 HITACHI Features Pin Arrangement • 3.3V:t 5% Operation • LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

HM514101

Abstract: FL256
Contextual Info: HM514101 C/CL Series 4,194,304-word x Preliminary 1-bit Dynamic Random Access Memory Rev. 0.0 Sep. 15,1994 HITACHI The Hitachi HM514101C/CL is a CMOS dynamic RAM organized 4,194,304-w ord x 1-bit. HM514101C7CL has realized higher density, higher performance and various functions by

2SH15

Contextual Info: A D E - 2 0 8 - 2 8 8 Z 2SH15 Silicon N-Channel IGBT 1 st. Edition Feb. 1995 HITACHI Application TO-3P High speed power switching Features • High speed switching • Low on saturation voltage 1. Gate 2. Collector 3. Emitter Table 1 A b s o l u t e M a x i m u m R a t i n g s (Ta = 25^C )

2sh11

Contextual Info: A D E - 2 0 8 - 2 7 4 Z 2SH11 Silicon N-Channel IGBT HITACHI 1 St. Edi ti on Application High speed power switching Features • High speed switching • Low on saturation voltage Table 1 Absolute Maximum Ratings (Ta = 25^C) Item Sym boi R a ting s U n it

11010

Contextual Info: SPICE Device Model SUM110N06-3m4L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

HM63021P

Contextual Info: HM63021 Series 2048-word x 8-bit Line Memory The HM63021 is a 2048-word × 8-bit static serial access memory SAM with separate data inputs and outputs. Since it has an internal address counter, no external address signal is required and internal addresses are scanned serially. Using five different address scan modes, it is applicable to FIFO

OSRAM DULUX S

Abstract: OSRAM halogen light OSRAM DULUX L OSRAM electronic halogen transformer design OSRAM halogen lamp OSRAM DULUX el OSRAM DULUX f 43721 halotronic
Contextual Info: T ABLE LIGHTS – BRILLIANT ECONOMY L IGHT EXACTLY WHERE IT IS NEEDED THERE IS LIGHT. AND THERE IS OSRAM. OSRAM L IGHT A good table light is not just bright, it has to provide illumination of a high quality. This is determined by a number of functional and

Triac bt 808 600C

Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
Contextual Info: 2361 Technical portal and online community for Design Engineers - www.element-14.com Sensors & Transducers Accelerometers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contrast Scanners . . . . . . . . . . . . . . . . . . . . . . . . . Current Transducers . . . . . . . . . . . . . . . . . . . . . . .

crystal 11.0592 MHz

Abstract: 17-1BB TRW coded digital signals 73k224l-28ih
Contextual Info: smmsvskms SSI 73D2240 V.22bis 2400 Bit/s Modem Device Set A TDK Group/Company December 1992 DESCRIPTION FEATURES The SSI 73D2240 is a set of two ICs that provide the data pump functions needed to design a high-perform­ ance, low-power 2400 bit/s intelligent modem for use in

c103 a ge

Contextual Info: ADE-207-111 A Z HA13536F Three-Phase Brushless DC Motor Driver IC HITACHI Description The HA13536F is a 3-phase brushless DC motor driver IC with digital speed control. It is being developed for direct drive of the spindle motor of 5 V floppy disk drives with a height of 3/4" or less.

Contextual Info: O rJer hiur^bey mUTlll HM530281 331,776-Word x 8-Bit Frame Memory Prelim inary HITACHI The H M 530280/281 series memory products provide completely asynchronous I/O and operate at the high speed of 50 MHz. A 0.8 ^m CMOS process is used in their fabrication.

Contextual Info: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in­

ELL80

Abstract: 500-SS A912S continental Ceramic ecu HA1227
Contextual Info: ADE-202-066 0 Aug. 1993 HD404054 Series/HD404094 Series 4-B it Single-Chip Microcomputer HITACHI Description T he H D 404054 S eries and H D 404094 S eries are H M C S 4 0 0 -s e rie s m ic ro c o m p u te rs d e s ig n e d to increase program productivity w ith large-capacity

Contextual Info: HB56TW432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW432D is a 4M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16-Mbit DRAM (HM51W16400ATS) sealed in TSOP package. An outline of the HB56TW432D is 72-pin Zig Zag

ALRS8

Contextual Info: m iir 1^ 2 , HM5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The