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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
N-Channel IGBTContextual Info: A D E - 2 0 8 - 2 9 4 Z 2SH21 Silicon N-Channel IGBT 1 st. Edition Feb. 1995 HITACHI Application TO-3P High speed power switching Features • High speed switching • Low on saturation voltage 1. Gate 2. Collector 3. Emitter Table 1 Absolute M axim u m Ratings (Ta = 25^C) |
OCR Scan |
2SH21 D-85622 73592f 730607f ADE-208-294 N-Channel IGBT | |
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Contextual Info: A D E - 2 0 8 - 2 9 2 Z 2SH19 Silicon N-Channel IGBT HITACHI 1 St. Edition Application High speed power switching Features • High speed switching • Low on saturation voltage Table 1 Absolute M axim u m Ratings (Ta = 25^C) Item Sym boi Ratings Unit Collector to emitter voltage |
OCR Scan |
2SH19 D-85622 73592f 730607f ADE-208-292 | |
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Contextual Info: A D E - 2 0 8 - 2 9 5 Z 2SH22 Silicon N-Channel IGBT 1 st. Edition Feb. 1995 HITACHI Application T O -3 P L High speed power switching Features • High speed switching • Low on saturation voltage 1. Gate 2. Collector 3. Emitter Table 1 Absolute M axim u m Ratings (Ta = 25^C ) |
OCR Scan |
2SH22 D-85622 73592f 730607f ADE-208-295 |