731 MOSFET Search Results

IRFS730

Abstract: 731 MOSFET 250M IRFS731 L17M
Contextual Info: N-CHANNEL POWER MOSFETS IRFS730/731 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

passive mixer

Abstract: PE4150 peregrine
Contextual Info: NEWS RELEASE EDITORIAL CONTACT: Reader/Literature Inquiries: Mark Schrepferman, Director, Comm/Industrial Products Phone: 858-731-9512 Cindy Trotto, Marketing Communications Manager Phone: 602-750-7203 sales@psemi.com Peregrine Semiconductor Corporation 9380 Carroll Park Drive

irf730

Contextual Info: N-CHANNEL POWER MOSFETS IRF730/731 FEATURES • • • • • • • Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

irf730

Abstract: IRF N-Channel Power MOSFETs irf730 mosfet IRF731 DIODE IRFP330 IRF732 IRF733
Contextual Info: IRF730/731/732/733 IRFP330/331/332/333 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRF730

Abstract: F7303 IR 733 IR 732 p
Contextual Info: N-CHANNEL POWER MOSFETS IRF730/731/732/733 FEATURES • • • • • • • TO-220 Lower Rds <on> Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

GR 733

Abstract: IR 733
Contextual Info: N-CHANNEL POWER MOSFETS IRFS730/731/732/733 FEATURES TO-220F • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

MAX471

Abstract: MAX933
Contextual Info: AMPLIFIER AND COMPARATOR CIRCUITS BATTERY MANAGEMENT CIRCUIT PROTECTION PORTABLE POWER Application Note 731: Jan 31, 2001 Overload Circuitry Protects Batteries and Power Supplies A combination of current-sense amplifier, dual-comparator and external CMOS switches can be used to

IRFS730

Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: Specification No. Q/WAPL785060-1011 Edition No. 1.0 Polymer Lithium-ion Battery Product Specification Model：785060 2500mAh Hunan Sounddon New Energy Co., Ltd Address:No.98, Fuzhou Road,Jinhua Demonstration Area,Xiangtan City,Hunan Province,China. Tel: 86 731 - 5856 7126

APP731

Abstract: MAX9943 731 MOSFET AN-731 MAX4172 AN731 MAX623 MAX933
Contextual Info: Maxim > App Notes > Circuit Protection Keywords: current sense amplifier, comparator, overload protection, comparators, current overload, battery protection Jan 31, 2001 APPLICATION NOTE 731 Overload Circuitry Protects Batteries and Power Supplies Abstract: A combination of current-sense amplifier, dual-comparator, and external CMOS switches can be used to

F730R

Contextual Info: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ

equivalent ic to PAL 007 E MOSFET

Abstract: mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent
Contextual Info: INDEX Order Code Description Manufacturer 789-719 789-707 792-731 792-561 704-453 704-441 792-160 791-787 790-722 703-722 703-710 597-351 597-363 597-375 941-864 705-263 663-773 705-275 704-957 786-809 786-810 786-822 795-410 505-031 792-962 793-061 793-358

733R

Abstract: F730 55a5e
Contextual Info: 23 HARRIS IR F730/731/732/733 IR F730R/731R/732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 F e a tu re s • Package T O -2 2 0 A B 4.5A and 5.5A, 350V - 400V T O P VIEW • r D S ° n = 1 -o f l a n d 1 -5 f l • Single Pulse Avalanche Energy Rated*

IRF730

Abstract: 733 331 IRFP330 731 MOSFET IRF731 IRFP331 331Z Z012I IRF732 dd173d
Contextual Info: SA M S UN G E L E C T R O N I C S INC b7E D • V T b M l M S D G I T S T T 523 ■ SUCK N-CHANNEL POWER MOSFETS IRF730/731Z732/733 IRFP330/331/332/333 FEATURES • • • • • • • TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

zxms6004

Abstract: ZXMS6004FF ZXMS66004FFTA zxms66004 design ideas TS16949
Contextual Info: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 90mJ Description

ZXMS66004SGTA

Abstract: zxms6004 design ideas TS16949 ZXMS6004SG zxms66004
Contextual Info: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description

zxms66004

Abstract: ZXMS66004DGTA 6004D design ideas ZXMS6004DG TS16949 ZXMS6004
Contextual Info: A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 490mJ Description

Contextual Info: A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 490mJ Description

Contextual Info: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description

Contextual Info: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 90mJ Description

MAX752cpa

Contextual Info: 19-4672,Rev2,2/93 >i/iyjxi>i/i +5V/Adjustable Step-Up Current-Mode DC-DC Converters G e n e ra l D e s crip tio n The MAX731 and MAX752 are fixed and adjustable CMOS, step-up, DC-DC switch-m ode regulators The MAX731 a cce p ts a positive input voltage between +2 5V

6A08

Abstract: design ideas TS16949 ZXMN6A08K ZXMN6A08KTC ZXMN6A08
Contextual Info: Part no. ZXMN6A08K 60V DPAK N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.080 @ VGS= 10V 18.2 0.150 @ VGS= 4.5V 13.3 60 Description This new generation Trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for

Contextual Info: ZXGD3103EV1 EVALUATION BOARD USER GUIDE Description This document describes how to connect and evaluate the ZXGD3103EV1 evaluation board shown in Figure 1. The purpose of this board is to demonstrate the driving of a synchronous MOSFET as a Schottky/ultra-fast recovery diode replacement in high efficiency power converters. End applications

ZXMP 6A17

Abstract: 6a17 ZXMP6A17K design ideas ZXMP6A17KTC TS16949 zxmp6A17
Contextual Info: Part no. ZXMP6A17K 60V DPAK P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.125 @ VGS= -10V 15.6 0.190 @ VGS= -4.5V 12.6 -60 Description This new generation Trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for