732 774 047 Search Results

ultrasonic weld

Contextual Info: 3mm LED CBI Circuit Board Indicator Ganged Arrays CBI Type 553-xxxx-0xx Standard View STANDARD POLARITY CATHODE ON RIGHT 9.06 [.36] 5.16 [.203] REF CARRIER BI-LEVEL ASSY 10.67 [.420] ULTRASONIC WELD 3.68 [.145] 90° 4.44 [.175] REF 2.80 [.103] MAX 2.54 [.100] TYP

Contextual Info: WJ-RG2Q/SMRG20 W 10 TO 2000 MHz TO-8B LINEARIZED VOLTAGE CONTROLLED ATTENUATOR F : W¥< ilpi 'V ' ♦ ATTENUATOR AND LINEARIZER FULLY INTEGRATED IN ONE PACKAGE ♦ HIGH DYNAMIC RANGE ♦ WIDE BANDWIDTH ♦ LOW INSERTION LOSS f i b ; . Outline Drawings RG20

Contextual Info: M60 Section 8 FREV2:11-2011 11/20/11 2:51 PM Page 129 ANTI-VIBRATION GROMMETS Anti-vibration grommets are designed for noise suppression in office or lab equipment. Additionally, they isolate sensitive instrumentation from unpredictable vibration and shock. The fingers of the grommets

CQ 765

Abstract: CQ 637 CQ 818 FLK022
Contextual Info: FLK022XP : FLK022XV GaAs F ET u n dH E M T Chips ELECTRICAL CHARACTERISE CS Amb ent Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions 100 150 mA - 50 - mS -1.0 -2.0 -3.5 V -5 - - V 23 24 - dBm 6 7 - dB - 32 - % VdS = 5V, Ids = 65mA

SXM 08

Abstract: APLMK SXA/M001 JST SXA-001T-P0.6L APLNC XMR-02V XMR-03V XMR-04V XMR-05V E60389 LR20812
Contextual Info: Crimp 2.5mm XM CONNECTOR Crimp style wire-to-wire connectors .098" pitch Features –––––––––––––––––––––––– • Inner-housing lock This inner-housing lock secures the plug to the receptacle and prevents accidental disconnection. The lock is protected and

FLK022XV

Contextual Info: FLK022XP, FLK022XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a pow er G aAs FET that is

FLK022

Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
Contextual Info: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is

tdk ferrite pc30

Abstract: PC40EE13-Z PC40EE22-Z EE-625 PC30EE30Z ferrite core tdk pc30 BE30-1110CP pc40EE25 BE-22-1110CP BE-13-1110CPS
Contextual Info: TDK Ferrite Cores / EE AND EF CORES X Q LLI < X \ C F B Fig. 1 Part No. U.S. lam. cores, DIN standard JIS Fig. Dimensions in mm inches A B C D E F H 3.0±0.1 .118± .004 1.0 .039 4.2±0.15 .165± .006 4.45 ±0.15 .175 ±.006 4.7 ±0.1 .185 ±.004 1.1 .043

funkschau

Abstract: RGN2004 EZ707 ERG IC 1118 rgn 1064 AZ4 philips Scans-048 RGN1504 telefunken rohren PP031
Contextual Info: S ta rk e rw e ite rte , v ö llig neu b e c rb e ite te A u fla g e l Q i / I / 4 0 I FUNKSCHAU-ROHRENTABELLE D ie F U N K S C H A U - R ö h re n to b e lle b rin g t in ih re m H o uptte il d ie a u s fü h rlic h e n D a te n un d S o c k e ls c h a lto n g e n

108 046f

Abstract: 03e1 046F 044f 03C24 b 0334 046b
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03E1

Abstract: 00CF ISD33000 b0334 04D5
Contextual Info:

 
      
 
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microMELF dimensions

Contextual Info: MCC TM Micro Commercial Components PACKA CKAGE GE OUTLINES A D D C B Cathode Mark DODO-41 DODO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE ∅ ∅ DIM A B C D DIMENSIONS INCHES

Contextual Info: TM Micro Commercial Components A D D C B Cathode Mark DO-41 DO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE DIM A B C D DIM A B C D MAX 5.20 2.70 .64 - NOTE DIM A B C D DIM

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

702 TRANSISTOR sot-23

Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

mje 1303

Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

bticino

Abstract: bTicino Magic 1SL9891A00 1SL9143A00 1SLC800001D0201 6 canali 393 EZ 639 393 EZ 952 galvanised steel conduit 1SL9033A00
Contextual Info: Technical catalogue Plastic and metal trunking systems Plastic and metal trunking systems In consideration of modifications to Standards and materials, the characteristics and overall dimensions indicated in this catalogue may be considered binding only following

1057 D21B

Abstract: 072d silabs 353 PCA B 790 0029 1588 RS232 062d b4420 07BC 0352 FCS 530 rfm 1207
Contextual Info: TRC101/102 FHSS By Bob Nelson 2/7/2007 Scope: This application will demonstrate the ease of implementing a FHSS radio when using the TRC101/2. This document will give you the schematic and firmware to implement the design. Keep in mind that the TRC101/2 will meet or exceed FCC

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

BJT BF 331

Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

014e1

Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

transistor bf 968

Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O

mje 1303

Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE