733 MOSFET Search Results

003A

Abstract: 2SJ472-01L
Contextual Info: Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com _ SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2SJ472-01L.S

Contextual Info: PACKAGE DIMENSIONS mm TO-3PF 5 . 5 —0 3 Power MOSFET 1. Gate 2. Drain 3. Source Collmer Semiconductor, Inc. • Phone: (972) 733-1700 • FAX: (972) 381-9991 37

JANSR2N7524

Abstract: JANSR2N7524T1 JANSF2N7524T1
Contextual Info: PD-94713C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level IRHMS597064 100K Rads (Si) IRHMS593064 300K Rads (Si) RDS(on)

JANSR2N7524

Abstract: JANSR2N7524T1
Contextual Info: PD-94713C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level IRHMS597064 100K Rads (Si) IRHMS593064 300K Rads (Si) RDS(on)

irf730

Abstract: IRF N-Channel Power MOSFETs irf730 mosfet IRF731 DIODE IRFP330 IRF732 IRF733
Contextual Info: IRF730/731/732/733 IRFP330/331/332/333 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRF730

Abstract: F7303 IR 733 IR 732 p
Contextual Info: N-CHANNEL POWER MOSFETS IRF730/731/732/733 FEATURES • • • • • • • TO-220 Lower Rds <on> Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

GR 733

Abstract: IR 733
Contextual Info: N-CHANNEL POWER MOSFETS IRFS730/731/732/733 FEATURES TO-220F • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRFS730

Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

QL8X12B-XPL68C

Abstract: U112 FET intel 80960 MOTHERBOARD pcb CIRCUIT diagram pci arbiter schematics AM26LS32SC PGA zif socket U118 AP-733 QL8x12B-0PL68C vhdl code for watchdog timer of ATM
Contextual Info: A AP-733 APPLICATION NOTE Switched Ethernet Reference Design Description Rod Mullendore SPG 80960 Applications Engineer Intel Corporation Semiconductor Products Group Mail Stop CH6-412 5000 W. Chandler Blvd. Chandler, Arizona 85226 July 23, 1996 Order Number: 272907-001

F730R

Contextual Info: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ

HB-1M1608

Abstract: HB-1M2012-601JT smd diode f4 4d HB-1M2012 N32N A21 SMD diod SMD diod B13 c151 smd diod Compal Electronics foxconn
Contextual Info: A B C D E 1 1 2 2 Hurricane 1.6 N32N LA-733 REV. 4A SCHEMATIC DOCUMENT uPGA2 COPPERMINE with Geyserville 3 3 4 4 Compal Electronics, inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL

IRF730

Abstract: 733 331 IRFP330 731 MOSFET IRF731 IRFP331 331Z Z012I IRF732 dd173d
Contextual Info: SA M S UN G E L E C T R O N I C S INC b7E D • V T b M l M S D G I T S T T 523 ■ SUCK N-CHANNEL POWER MOSFETS IRF730/731Z732/733 IRFP330/331/332/333 FEATURES • • • • • • • TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

733R

Abstract: F730 55a5e
Contextual Info: 23 HARRIS IR F730/731/732/733 IR F730R/731R/732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 F e a tu re s • Package T O -2 2 0 A B 4.5A and 5.5A, 350V - 400V T O P VIEW • r D S ° n = 1 -o f l a n d 1 -5 f l • Single Pulse Avalanche Energy Rated*

MAX752CPA

Abstract: ITS470 1N5817 MAX752 MAX752EVKIT-DIP MAXC001
Contextual Info: 19-0036, Rev 0, 6/92 EVALUATION KIT /i/i/ix iy i/i M A X 7 5 2 E v a lu a tio n K it The MAX732/733/752 use current-mode pulse-width modulation PWM controllers to provide precise output regulation and low subharmonic noise Typical no-load supply current is 2mA.

Contextual Info: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO

IRFP60A

Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Contextual Info: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes

FN730

Abstract: ufn731
Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel FEATURES • C om pact Plastic Package • Fast Sw itching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability UFN730 UFN731 UFN732 UFN733 DESCRIPTION

Contextual Info: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays

ksd 250v 10a

Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623

3K45

Contextual Info: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%

Contextual Info: AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V 2078 N Channel Power MOSFET 3449 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Micaless package facilitating easy mounting. bsolute M axim um R atin g s a t Ta = 25°C

SA SOT-23

Abstract: diode sv 03
Contextual Info: SIPMOS N Channel MOSFET BSS 123 • SIPMOS - enhancement mode • Drain-source voltage Vfci = 100V • Corrtinuous drain current l D = 0.17A • Drain-source on-resistance • Total power dissipation /%* «• = 6.00 PD - 0.36W Type Marking Ordering code for

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

SSR -100 DD

Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471
Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V