74 C 909 Search Results

Contextual Info: Pomona M lM sm h • B ! .74-77 Alligator C lip . 22,40,41,56,63 Attenuator .45,47

ML-8741

Abstract: Raytheon Company
Contextual Info: The M achlett Laboratories, Inc. 7W 1063 Hope Street • Stam ford, Conn. 0 69 0 7 ISSU ED 9.66 Tel. 203-348-7511 • TW X 7 10 -4 74 -1 74 4 S 1 .af§]7 M in ia tu r e UHF P la n a r Triodes C W , Plate or Grid Pulsed Low Grid-Plate Capacitance Phormat Cathode

5059 mixer

Abstract: 35X14 23128 E 70 5059
Contextual Info: SC IEN TIFIC/ M IN I-CIR CUITS ^C^Z D • flObflfill 0001431 345 * S C C surface-m ount T-74-09-0] Frequency Mixers Models LEVEL 7 + 7dBm LO, up to + 1dBm RF LRMS-2D computer-automated performance data typical production unit / for data of other models consult factory

2SD1438

Abstract: AC46C
Contextual Info: 9097250 TOSHIBA de | b o t t e s d o c a 7 e!74 T Tb TOSHIBA íDISCRETE/OPTO} DISCRETE/OPTO SILICON NPN EPITAXIAL TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS U n i t i n mm MICRO MOTOR DRIVE, HAMMER. DRIVE APPLICATIONS.

OPTO 817 C

Abstract: 0817B opto 817 817 OPTO
Contextual Info: TOSHIBA {DISCRET E/OP TO 3- Sb 9097250 T O S H IB A i Ê| ^017250 0DQñl74 4 ‘j o C 0 817 '+ D IS C R E T E /O PT O ) T - 74- 09-01 TOSHIBA RF POWER AMPLIFIER MODULE 800MHE UHF POWER AMPLIFIER MODULE <FM) Unit in m m 6 6.0 FEATURES: -&ÜQ- . Output Power

Contextual Info: Plug-In 4TE ì> m flO bf lfl ll 000122S SflT « S C C Frequency Mixers Model LEVEL 7 T-74-09-01 LMX-113 + 7 dB m LO, up to +1dBm RF SC IE N TIFIC / M IN I-C IR C U ITS computer-automated performance data typical production unit / for data of other models consult factory

nl 545

Abstract: Si 4209 Si 4593
Contextual Info: WE most widely-used, surface-mount S C IE N T IF IC / H IN I- C IR C U IT S ]> • f iO b f if ill 0001371 Frequency Mixers LEVEL 7 +7dB m LO, up to +1dBm RF 040 Models «SC C T -74-09-01 RMS-2 LRMS-2R LRMS-2F LRMS-2 |§5I computer-automated performance data

IC str 1229

Abstract: fairchild 90028 L4W 63
Contextual Info: FAIRCHILD SALES REPRESENTATIVES C A LIFO R N IA CELTEC COMPANY 7380 C lairem ont Mesa Blvd., Suite 109 San Diego, C alifornia 92111 Tel: 714-279-7961 TWX: 910 -33 5-15 12 KANSAS B.C. ELECTRONICS 1015 W est Santa Fe Olathe, Kansas 66061 Tel: 913 -78 2-66 96 TWX: 910 -74 9-64 14

cv 2663

Abstract: 2322 712 83
Contextual Info: MTE J> • SCIENTIFIC/ MINI-CIRCUITS aotaail DDD1313 M4T « S C C very low distortion T - 74-09-07 Frequency Mixers ^ LEVEL 'I7S + 17dBm LO, up to + /l4 d B m RF TUF-2H ZFM-2H computer-automated performance data typical production unit / for d a ta of other models consult factory

Contextual Info: TT TOSHIBA -[DISCRETE/OPTO} DE I ^ C H V B S D 99D 16674 9097250 TOSHIBA <DISCRETE/OPTO D T ' tfoòhìht SEMICONDUCTOR 301LL.74 i r - 2 .tr TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 4 2 2 SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS Unit in mm TECHNICAL DATA

Contextual Info: TOSHIBA {DISCRETE/OPTO} Sb 9097250 T O S H IB A Î Ë| TOT7HSO 0DDÛ170 7 | 5 6C C D IS C R E T E / O P T O ) 08170 D T-74-09-Û1 S-AU6L S-AU6M S-AU6H TOSHIBA RF POWER AMPLIFIER MODULE Unit in mm UHF POWER AMPLIFIER MODULE 6S0 6C to 5 2.8 FEATURES : 2— R3.1:ta3

Contextual Info: SC IEN TIFIC / M INI-C IRC UITS ^C ^Z D • f lO b f lf il l 000 143 1 34S * S C C su rfa ce -m o u n t T-74-09-0] Frequency M ixers Models LEVEL 7 LRMS-2D + 7dBm LO, up to + 1dBm RF com puter-autom ated perform ance data typical production unit / for ctata of other models consult factory

05Z36Y

Abstract: 05Z3.9 05Z30 05Z3.3 05Z47 05Z39 05Z2.2 05Z3.9Y 05Z2.0 05Z36
Contextual Info: b7 T OSHIBA {DISC RE TE /O PT O} DE | ‘ÌDIÌ72SD 00CHH74 2 | 9097250 TOSHIBA <D I S C R E T E / O P T O 67C 092 74 *• — D * - - :— S ilico n P la n a r T y p é Zener D io de 05Z2.0-05Z4.7 Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS.

Contextual Info: S C IE N T IF IC / M IN I-C IR C U IT S 4TE D flO bflflll s u rfa c e m o u n t, p iu g -m 00013TS Frequency Mixers Sfl4 B S C C Models T - 74-09-01 ASK-2 KK-81 (W-38) (X-65) L E V E L 7 (+ 7 dBm LO, up to +1 dBm RF) c o m p u te r-a u to m a te d p e rfo rm a n c e d a ta

2SC2104

Abstract: 10ID
Contextual Info: Sb TOSHIBA {DISCRETE/OPTO} D E ] TCHTESO Q0□ 74ö 4 3 | I7 9097250 T O S H IB A bbC <D I S C R E T E / O P T O > S IL IC O N NPN E P IT A X IA L P L A N A R TYPE_ 07484 2 S C O ' f ' 3 3 -OJ^ 2 1 0 4 Unit in mm UHF BAND POWER AM PL IF IE R APPLICATIONS.

D13BB

Contextual Info: T o : 1603BB01932 From : D o c u F A C T S U n l Ph# 3 49 -2 5 3 -74 3 8 Pomona — 1.55 — 3 9.37 .56 -• (14.22) 6:06am p. 2 o f 4 Model 1368 Double Banana Plug To Single Banana Plug Breakouts - LENGTH ± .5 0 (± 12.7 0) 1.25 (31.75) - 2X 5.0Q ± .5 0

2SD697

Contextual Info: "St TOSHIBA -CDISCRETE/OPTOï 9097250 TOSHIBA bòC CDISCRETE/O PTO 2SD647A 2SD697 Ai dF | TO^ESO DDG7?m ö I 07 74 1 Ur T-33-29 SILICON NP N TRIPLE DIFFUSED M E S A TYPE DARLINGTON P O W E R ) INDUSTRIAL APPLICATIONS HI GH PO WE R S W I T C H I N G APPLIC AT IO NS .

135-155MHZ

Abstract: OPTO 1142
Contextual Info: TOSHIBA {DISCRETE/OPTO} Sb 9097250 TOSHIBA »Ë| ^ 7 2 5 0 CDIS C R E T E / O P T O DDOfllID H |~~ 5oC 08L9Û D T-74-09-01 S-AV9L" TO SH IB A RF POWER A M P LIFIE R MODULE VHF POWER AMPLIFIER MODULE Unit in mm 6ao FEATURES : 2-R2.X±a2 / <0 a s in o • Output Power : P0 -S8W

5962-87792

Contextual Info: DESC FORM 193 SEP 87 DISTR IB U TIO N STA TEM EN T A, »U S GOVERNMENT PRINTING OfFICi: 1917 — 74»-129/60911 5962-E756 Approved for public release; distribution is unlim ited. 1. SCOPE 1.1 S co p e . T h is draw ing d e s c rib e s d e v ic e re q u ire m e n ts f o r c la s s B m ic r o c ir c u it s in acco rdan ce

bmdc

Abstract: 93P3976 KENAI32 qm77 SMDC075 TOKYO-3 PLANAR kt 501 1608B A04 SOT23 R5C554
Contextual Info: A B C D E F G H J K L M N DATE 05/13/03 05/27/03 9 TOKYO-2 PLANAR W/TOKYO-3 RAW CARD 8 7 6 5 4 3 2 1 41. 42. 43. 44. 45. 46. 47. 48. 49. 50. 51. 52. 53. 54. 55. 56. 57. 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. 70. 71. 72. 73. 74. 75. 76. 77. 78. 79.

BB909

Abstract: "Variable Capacitance Diode" BB909A BB909B
Contextual Info: b3E D • 1^53=124 QG 74 27 1 TIT « S I C B BB909A BB909B N A P C / P H I L I P S SE n i C O N D FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE O F H A N D B O O K SC01 OR D A T A S H E E T SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB909 is a variable capacitance diode in a glass envelope intended fo r e le ctro n ic tu n ing in v.h .f.

HA-2500

Abstract: HA-2502 HA-2510 HA-2512 HA-2520 HA-2522 HA-2600 HA-2602 HA-2620 HA-909
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, H A-2500, HA-2502, HA-2510, HA-2512, H A-2520, HA-2522, HA-2600, HA-2602, HA-2620, H A-2622, HA -2050, HA-2050A , HA-2060, HA-2060A TO-99 H < a "1 3 j— NOTES: T a = + 1 2 5 °C R- = 1 M e g o h m C-] = 0 .0 1 jU F , 1 0 0 V

106 25K 011

Abstract: HA-2500 HA-2502 HA-2510 HA-2512 HA-2520 HA-2522 HA-2600 HA-2602 HA-2620
Contextual Info: BURN-IN CIRCUITS H A-909 H A-909, H A-2500, H A-2502, H A-2510, HA-2512, H A-2520, H A-2522, H A-2600, H A-2602, HA-2620, H A-2622, H A-2050, H A -2050A , H A-2060, HA-2060A TO-99 H < a "1 3 j— NOTES: T a = + 1 2 5 °C R- = 1 M e g o h m C-] = 0 .0 1 jU F , 1 0 0 V

AT 2005A

Abstract: 106 25K 011 HA-2000 HA-2000A HA-2050A HA-2060 HA-2060A HA-2500 HA-2502 HA-2510
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for M ilita ry Applications -55°C to +125°C PARAM ETER* F.E.T. PR EA M P HA-2000 HA-2000A HA-205O HA-909 ?r a m HA-2060A HA-2400 HA-2050A HA-2060 S/H HA-2420 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C T E R IST IC S