742 MOSFET Search Results

IRF740

Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

irf740

Abstract: irf740 mosfet power MOSFET IRF740 IRF740 ir irf741 F7403
Contextual Info: N-CHANNEL POWER MOSFETS IRF740/741/742/743 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysllicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

um 741

Abstract: LS 741 a 741 j
Contextual Info: N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower Rds O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

1RF624

Contextual Info: 1RF624A Advanced Power MOSFET FEATURES B Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A M ax. @ VDS = 250V H Low R ds(on) •0-742 D s s 2

ci 741

Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
Contextual Info: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance

TRANSISTOR wv4

Abstract: universal fet biasing curve graph LM343 Use High-Voltage Op Amps to Drive Power MOSFETs jerry steele LM12 PA03 PA04 PA07 PA12
Contextual Info: P r o te c t T h o se E xp en sive P o w e r OP Amps TT JERRY STEELE Apex Microtechnology Corp., 5980 North Shannon Rd., Tucson, AZ 85741; 602 742-8600. ybrid, power op amps can reliably deliver large power outputs as long as proper protection is • ■

742r

Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
Contextual Info: 23 H A R R IS IR F740/741/742/743 IRF740R/741R/742R/743R N -Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B • 8A and 10A, 350V - 400V TOP VIEW • rD S °n = 0 .5 5 fi and 0.8J1 • Single Pulse Avalanche Energy Rated*

AX643

Abstract: RC4193 DC-DC converters 1.8W MAX743CPE
Contextual Info: POWER SUPPUES Data Sheets • Applications Notes • Free Samples +5V To ±15V DG-DC Converter Delivers 30W No Design Required—J u s t Drop It In T he M A X 742/M A X 743 DC-DC converters provide the sim plest m eans available for generating ±12V or ± 15V from a +5V supply. T îie M AX743, with internal M O SFETs, powers 3 w att loads, while th e MAX742,

IN5223

Abstract: T1003 742p ERAB2-004
Contextual Info: y n y jx iy n D ual-O utput, S w itch -M o d e R eg u la to r + 5 V to ± 1 2 V o r± 1 5 V _ G eneral D escription The M A X 742 D C -D C c o n v e rte r is a c o n tro lle r for dual-outp u t pow er s u p p lie s in the 3W to 60W range. R elying on

Contextual Info: ! 9 JAN 199 y i/iy jx iy i/i D u a l-O u tp u t, S w itc h -M o d e R e g u la to r + 5 V to ± 1 2 V o r ± 1 5 V _ G eneral Description _Features T h e M A X 742 D C -D C c o n v e rte r is a c o n tro lle r for d u a l-o u tp u t p o w e r s u p p lie s In th e 3W to 6 0 W ra n g e . R e lying on

SSH6N80

Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
Contextual Info: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65

74123 spice

Abstract: 74123 SUU50N025-09BP
Contextual Info: SPICE Device Model SUU50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

application notes 74121

Abstract: 74121 spice model 74121 sud*50n025 09bp 74121 ON SUD50N025-09BP sud*50n025
Contextual Info: SPICE Device Model SUD50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUR50N025-09BP

Abstract: convergence
Contextual Info: SPICE Device Model SUR50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: P re lim in a ry data Standard Power MOSFET IX T H IX T H P-Channel Enhancement Mode Avalanche Rated 10P50 11P50 Symbol Test Conditions V DSS T j = 25 °C to 150°C -500 V VDGR Tj = 25 °C to 150°C; RGS = 1 M£2 -500 V Vos V GSM Continuous +20 V Transient

74123

Abstract: 74123 spice 742 mosfet
Contextual Info: SPICE Device Model SUU50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

Contextual Info: BEE D • 023fc.32Q Q0171b7 = « S I P SIPMOS N Channel MOSFET _ S IE M E N S / SPCLi BSS 138 X ^ Z S ' ^ S T _ S EM IC O N D S • SIPMOS - enhancement mode • Draln-source voltage Vt» = 50V • Continuous drain current Io = 0.22A • Drain-source on-resistance

Contextual Info: IRLS530A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS=100V

D745

Contextual Info: IRFS720A Advanced Power MOSFET FEATURES bvdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA M ax. @ VDS= 400V ■ Lower RDS(ON) : 1.408 £2 (Typ.)

Contextual Info: SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC

Contextual Info: SFW/I9520 Advanced Power MOSFET FEATURES b v dss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -6.0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

CD 1517

Abstract: IRFIBE20G
Contextual Info: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =