748 TRANSISTOR ON Search Results

2n7505

Abstract: IRF5Y9540CM
Contextual Info: INCH-POUND MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.

RS4-1D1-B

Abstract: RS4-1D1-A ac spst relays spst relays scr snubber
Contextual Info: Selector Guide Solid State Relays Series Features RS1 RS2 • Opto Isolated • Upright • Industry Standard Package Contact Arrangement • Compatible with TTL Gates • Push−on Connector Terminals • Mounts on a TO3 Transistor Heat Sink RS3 RS4 • AC and DC Models

Contextual Info: Features • • • Compatible with TTL Gates Push−On Connector Terminals Mounts on a TO3 Transistor Heat Sink RS2 Series Printed Circuit Board Mountable Solid State Relay, 7 Amp. D37 1.500 38.1 1.188 (30.2) .325 (8.3) INPUT .670 (17.0) Max OUTPUT .500

uzj845

Abstract: 748 transistor on UZJ313 UZJ3325 chloride ups circuit diagram transistor 335 UZJ3245 UZJ844 UZJ316 UZJ3225
Contextual Info: UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first hook-up connector.

RS2-1D7-35

Abstract: 5vdc relay 12VDC TTL RS2-1D7-33
Contextual Info: Features • • • Compatible with TTL Gates Push−On Connector Terminals Mounts on a TO3 Transistor Heat Sink RS2 Series Printed Circuit Board Mountable Solid State Relay, 7 Amp. D37 1.500 38.1 1.188 (30.2) .325 (8.3) INPUT .670 (17.0) Max OUTPUT .500

UZJ3335

Abstract: UZJ334 UZJ845 UZJ323 UZJ316 UZJ3245 UZJ313 transistor case To 106 UZJ3325 UZJ311
Contextual Info: UZJ3 series 0.6.8 16:42 Page 23 UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first

UZZ8031

Abstract: 748 DIODE UZA801 UZA802 UZN11 UZN115 UZZ8032 UZZ8131 UZZ8132 acceleration sensor matsushita
Contextual Info: UZN10.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P X “ UZN10 Series WATER DETECTION SENSORS DETECTS WATER.RELIABLY! Strong beam Power As the beam power is strong, its beam can pass through not only translucent containers PFA tanks, etc. but also opaque containers of shampoo bottles,

transistors BC 543

Abstract: TRANSISTOR BC 748 transistor BC 543
Contextual Info: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration

748 transistor on

Abstract: "by 236" diode UZQ300 UZQ831 UZQ301 UZQ302 UZQ303 UZQ304 UZQ305 UZQ306
Contextual Info: UZQ3 series 232-242 0.6.10 14:44 Page 1 UZQ30 Series SQUARE-SHAPED MINIATURE PROXIMITY SENSORS HIGH PERFORMANCE IN SURPRISINGLY SMALL BODY WITH COST EFFECTIVENESS The Smallest Size Close Mounting Mountable in a tight space as the sensor is just 6‫ן‬6‫ן‬19mm

Contextual Info: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

zener n7

Abstract: UZD62 W10H DC-12 DC-13 EN50081-2 UZD60 UZD61 UZD621 UZD861
Contextual Info: UZD6 series 0.6.8 15:52 Page 5 FIXED-FOCUS REFLECTIVE TYPE PHOTOELECTRIC SENSORS UZD6 Series PRECISE OBJECT DETECTION IN LIMITED AREA Stable Sensing by Fixed-focus No matter to install in a limited space. 100 3.937 50 1.969 30 1.181 Central sensing distance

PHN110

Abstract: MS-012AA
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor PHN110 FEATURES DESCRIPTION • High-speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 S08 package. • No secondary breakdown • Very low on-resistance.

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

GP1A71A1

Contextual Info: SHARP GP1A71A/GP1A71A1 • Features 1. Com pact type 2. Snap-in m ounting type 3. Can be m ounted on 3 different thickness boards 1.0mm, 1.2mm, 1.6mm 4. 3-pin connector term inal GP1A71A/GP1A71A1 Photofciterrupter with Connector ■ OuUne Dim ensions G P1A71A

transistor zc

Abstract: transistor zx series transistor C3 C3EX
Contextual Info: Cell-Based IC Crystal Oscillators Introduction Crystal Theory This Engineering Application Note EAN describes the use of the Crystal Oscillator parts in the ATMEL Libraries. The mechanical impedance of a crystal for one particular series resonant frequency k (the fundamental and its overtones) can be electrically modeled by a

UZG121

Abstract: UZG120 UZG1205 UZG130 UZG140 UZH130 UZH200 UZH301 UZH302 UZH462
Contextual Info: UZG series 0.6.7 15:56 Page 1 AMPLIFIER-SEPARATED PHOTOELECTRIC SENSORS UZG/H Series SMALL PACKAGE POWER & FLEXIBILITY Just Press the Buttons Anyone can achieve the optimum sensitivity setting with the press of a button. ᕃ Press “ON” button on the mark.

MOSFET J132

Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
Contextual Info: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

MOSFET J132

Abstract: J132 MOSFET J127 mosfet MRF8S7170N AN1955 MRF8S7170NR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station

transistor J128

Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station

5007

Abstract: COMMUNICATIONS TRANSISTOR CORP EC-0006 EC-5007
Contextual Info: EC-5007 PRELIMINARY DATA LNA / DOWNCONVERTER 500–3000 MHz Features n n n n n n n n Single 3.0 to 5.0 Vdc Operation Separate LNA and Active Downconverter functions Balanced IF Output to 200 MHz Power-down Capability Low Power Consumption Low LO Power Use EC-0006 for LO drive

ic smd 851

Abstract: KPA1890 transistor P 24 smd
Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1890 TSSOP-8 Features Unit: mm Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS on 1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m