74HCT04 CD4689 Search Results

CD4689

Abstract: 74hct04 cd4689
Contextual Info: HMC232C8 v01.0703 MICROWAVE CORPORATION GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Typical Applications Features The HMC232C8 is ideal for: Isolation: 55 dB @ 2.0 GHz 43 dB @ 6.0 GHz • Telecom Infrastructure Insertion Loss: 1.6 dB Typical @ 6.0 GHz

Contextual Info: MICROWAVE CORPORATION HMC132G7/132P7 FEBRUARY 1998 Features General Description BANDWIDTH: DC-6 GHz The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC HIGH ISOLATION : > 40 dB SPDT switch. NON-REFLECTIVE DESIGN Both use the same 7-pin ceramic package but with modified lead

CD4689

Abstract: 74HC04 74HCT04 DC-10 HMC110
Contextual Info: GaAs MM 1C 5 - Bi t Digital Attenuator HITTITE MICROWAVE CORPORATION HMC110 FEBRUARY 1995 Features BANDWIDTH: DC-10 GHZ LOW INSERTION LOSS : <6 dB 31 dB ATTENUATION RANGE Typical Performance FAST SWITCHING: 6nS General Description The HMC110 chip is a 5-bit digital attenua­

CD4689

Abstract: 74hct04 cd4689
Contextual Info: MICROWAVE CORPORATION FEBRUARY 1998 Features General Description BANDWIDTH: DC-9 GHz The HMC132C8 is a surface mount, low HIGH ISOLATION : >50dB cost, non-hermetic packaged version of the NON-REFLECTIVE DESIGN HMC132G7 MMtC SPDT switch The device is a fast, broadband SPDT switch featuring

Contextual Info: GaAs MMIC 5 - Bi t Digital Attenuator HITTITE MICROWAVE CORPORATION HMC110 FEBRUARY 1995 Features BANDWIDTH: DC-10 GHZ LOW INSERTION LOSS : <6dB 31 dB ATTENUATION RANGE Typical Performance FAST SWITCHING: 6nS in General Description O z O F <r The HMC110 chip is a 5-bit digital attenua­

74hct04 cd4689

Contextual Info: MICROW AVE CORPO RATION GaAs MMIC HIGH-POWER SPOT SWITCH DC - 4 GHz FEBRUARY 1998 Features General Description BANDWIDTH: DC-4 GHz The HMC106 chip isafast, broadband SPDT LOW INSERTION LOSS : <1 dB switch which can handle 3 Watt RF signals. HIGH POWER CAPABILITY: 3 WATTS

CD4689

Abstract: 74hct04 cd4689 DC 74HC04 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 74HC04 74HCT04 HMC132 GaAs DC-6 GHz SPDT Switch
Contextual Info: * ► I ?s[x X[ HITTITE MICROWAVE CORPORATION GaAs MMIC High-lsolation SPDT Switch HMC132 JUNE 1996 Features BANDWIDTH: DC-15 GHZ HIGH ISOLATION : > 50 dB NON-REFLECT1VE DESIGN Typical Performance GeneraI Description •a % o The H M C 132 chip is a fast, broadband

5B113

Abstract: 74HC04 74HCT04 HMC106 TTL 74hc04
Contextual Info: HITTITE MICROWAVE CORPORATION GaAs MMIC High-Power SPDT Switch HMC106 FEBRUARY 1995 Features BANDWIDTH: DC-4 GHZ LOW INSERTION LOSS : <1 dB HIGH POWER CAPABILITY: 3 WATTS Typical Performance GeneraI Description The HMC106 chip is a fast, broadband SPD T switch which can handle 3 W att RF

Contextual Info: GaAs MM 1C Non-Reflective SPDT Switch HITTITE MICROWAVE CORPORATION HMC104 FEBRUARY 1995 Features BANDWIDTH: DC-6 GHZ LOW INSERTION LOSS : <1 dB HIGH ISOLATION: > 40 dB Typical Performance General Description The HMC104 chip is a fast, broadband SPDT switch. It features RF and control

CD4689

Abstract: 74hct04 cd4689 74HC04 74HCT04 DC-10 HMC110 HMC110C14 HMC110G16 HMC1105
Contextual Info: HMC110 MICROWAVE CORPORATION GaAs MMIC 5 - BIT DIGITAL ATTENUATOR DC - 10 GHz FEBRUARY 2001 Features General Description BANDWIDTH: DC-10 GHZ The HMC110 chip is a 5-bit digital attenuator with a 31 dB range in 1 dB steps. Each bit is activated by applying 0V to port A and

DC 74HC04

Abstract: ultrasonic driver CD4689 74hct04 cd4689
Contextual Info: GaAs MMIC Non-Reflective SPST Switch HITTITE MICROWAVE CORPORATION FEBRUARY 1995 HMC103 Absolute Maximum Ratings Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.

Contextual Info: HMC132G7 HMC132P7 MICROWAVE CORPORATION GaAS MMIC HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ SEPTEMBER 1999 Features General Description BANDWIDTH: DC-6 GHz The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT switch. Both use the same 7-pin

74hct04 cd4689

Contextual Info: FEBR U AR Y 1998 Features BANDWIDTH: General Description DC-9 GHz The HMC132C8 is a surface mount, low HIGH ISOLATION : > 5 0 dB cost, non-hermetic packaged version of the NON-REFLECTIVE DESIGN HMC132G7MMICSPDTswitch. Thedevice is a fast, broadband SP D T switch featuring

Contextual Info: MICROWAVE CORPO RATION FEBRUARY 1998 Features General Description BANDWIDTH: DC-15 GHz The HMC132 chip is a fast, broadband SPDT HIGH ISOLATION : >50dB switch featuring high > 50 dB isolation over NON-REFLECTIVE DESIGN the entire band, provided by on-chip ground

CD4689

Abstract: 74HC04 74HCT04 HMC132 HMC132G7 HMC132P7 5V200
Contextual Info: '9 9 n ew ! HMC132G7 HMC132P7 MICROWAVE CORPORATION GaAS MMIC HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Features General Description BANDWIDTH: DC-6 GHz The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT switch. Both use the same 7-pin

Contextual Info: WL M V • HMC110G16 MICROWAVE CORPORATION GaAs MMIC SMT 5 - BIT DIGITAL ATTENUATOR DC - 2.0 GH FEBRUARY 1998 Features General Description B A N D W ID TH : DC-2 GHz The H M C 110G 16 is a 5-bit surface mount herm etically sealed digital attenuator. BIT LEVELS:

Contextual Info: HMC110 MICROWAVE CORPORATION GaAs MMIC 5 - BIT DIGITAL ATTENUATOR DC - 10 GHz SEPTEMBER 1999 Features General Description BANDWIDTH: DC-10 GHZ The HMC110 chip is a 5-bit digital attenuator with a 31 dB range in 1 dB steps. Each bit is activated by applying 0V to port A and

CD4689

Abstract: 74HC04 74HCT04 HMC132 74hct04 cd4689
Contextual Info: GaAs MMIC High-lsolation SPDT Switch HITTITE MICROWAVE CORPORATION HMC132 FEBRUARY 1995 Features BANDWIDTH: DC-15 GHZ HIGH ISOLATION : > 50 dB NON-REFLECTIVE DESIGN . H I H Typical Performance General Description The HMC132 chip is a fast, broadband SPDT switch featuring high > 50 dB isola­

74HC04

Abstract: 74HCT04 CD4689 HMC110 HMC110C14 HMC110G16 74hct04 cd4689
Contextual Info: HMC110G16 MICROWAVE CORPORATION GaAs MMIC SMT 5 - BIT DIGITAL ATTENUATOR DC - 2.0 GHz FEBRUARY 2001 V01.0301 Features General Description BANDWIDTH: DC-2 GHz The HMC110G16 is a 5-bit surface mount hermetically sealed digital attenuator. Each bit is activated by applying a 0V

74hct04 cd4689

Abstract: CD4689 74HC04 74HCT04 HMC106
Contextual Info: HMC106 MICROWAVE CORPORATION GaAS MMIC HIGH-POWER SPDT SWITCH DC - 4 GHZ SEPTEMBER 1999 Features General Description BANDWIDTH: DC-4 GHz The HMC106 chip is a fast, broadband SPDT LOW INSERTION LOSS : <1 dB switch which can handle 3 Watt RF signals. HIGH POWER CAPABILITY: 3 WATTS

74HC04

Contextual Info: Hittite HMC239S8 MICROWAVE CORPORATION as • 2.5 GHz jjj SPOT SWITC FEBRUARY 1998 Features General Description LOW INSERTION LOSS: 0.4 dB The HMC293S8 is a low cost GaAs MMIC SPDT switch in an 8-lead SOIC package. The switch can control signals from DC to

Contextual Info: v01.0801 HMC132G7/HMC132P7 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION GaAs MMIC HIGH-ISOLATION SPDT SWITCH, DC - 6 GHz Typical Applications Features The HMC132G7 and HMC132P7 are ideal for: Bandwidth: DC - 6 GHz • Military High Isolation: >40 dB

74HC04

Abstract: 74HCT04 CD4689 HMC110C14 HMC110G16
Contextual Info: HMC110G16 v01.0301 MICROWAVE CORPORATION 1 dB LSB GaAs MMIC SMT 5-BIT DIGITAL ATTENUATOR, DC - 2.0 GHz ATTENUATORS - SMT 2 Typical Applications Features • Base station Infrustructure Bandwidth: DC - 2 GHz • Portable Wireless Low Insertion Loss: 5 dB • CATV & DBS

Contextual Info: HMC110G16 MICROWAVE CORPORATION GaAs MMIC SMT 5 - BIT DIGITAL ATTENUATOR DC - 2.0 GHz SEPTEMBER 1999 Features General Description BANDWIDTH: DC-2 GHz The HMC110G16 is a 5-bit surface mount hermetically sealed digital attenuator. Each bit is activated by applying a 0V