75B DIODE Search Results

BUK9516-75B

Abstract: BUK9616-75B
Contextual Info: BUK95/9616-75B TrenchMOS logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

03ad10

Abstract: PSMN008-75B PSMN008-75P
Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

7606-75B

Abstract: diode 7446
Contextual Info: BUK75/7606-75B TrenchMOS standard level FET Rev. 02 — 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

BUK9506-75B

Contextual Info: BUK95/9606-75B TrenchMOS logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

BUK7213-75B

Contextual Info: BUK7213-75B TrenchMOS standard level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

diode 2JC

Abstract: 4S125
Contextual Info: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching

HZG469

Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
Contextual Info: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

Contextual Info: BUK7Y54-75B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: BUK7Y28-75B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

BUK7214-75B

Contextual Info: BUK7214-75B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

03no42

Abstract: BUK9217-75B
Contextual Info: BUK9217-75B TrenchMOS logic level FET Rev. 01 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7513-75B

Abstract: BUK7613-75B
Contextual Info: BUK75/7613-75B TrenchMOS standard level FET Rev. 01 — 14 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9Y30-75B

Contextual Info: BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 01 — 14 July 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK75

Abstract: BUK7513-75B
Contextual Info: BUK7513-75B N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

75B2

Contextual Info: BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.

2n491a

Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
Contextual Info: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. TX2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A

Contextual Info: BUK7Y18-75B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

PSMN005-75P

Abstract: 75p diode PSMN005-75B
Contextual Info: PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN005-75P in SOT78 TO-220AB

BUK9214-75B

Contextual Info: BUK9214-75B TrenchMOS logic level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

Contextual Info: LF PA K 56 BUK7Y18-75B N-channel TrenchMOS standard level FET 1 March 2013 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

BUK9506-75B

Contextual Info: BUK95/9606-75B TrenchMOS logic level FET Rev. 01 — 5 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: BUK75/7606-75B TrenchMOS standard level FET Rev. 01 — 5 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

BUK7214-75B

Contextual Info: DP AK BUK7214-75B N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to