samsung dram
Abstract: cmos 4001 dip
Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X DRAM X XXXXX X X X SPEED ORGANIZATION X1 X4 X8 X9 X16 X18 PROCESS & POWER •C: CMOS, 5V •V: CMOS, 3 3V •6 •7 : •8 : •10: 60ns 70ns 80ns 100ns PACKAGE DIP SOJ ZIP TS O P n TR: Reverse
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OCR Scan
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PDF
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100ns
16M/4K,
16M/2K,
16M/1K,
75CXXA
samsung dram
cmos 4001 dip
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Untitled
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED 6 0n s ORGANIZATION •7 • 1: XI • 4: X4 70ns 80ns •1 0 100ns • 8 X8 • 9 X9 •1 6 X16 •1 8 X1S PROCESS & POWER •C CMOS. 5V •V CMOS. 3 3V PACKAGE
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OCR Scan
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PDF
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100ns
16M--4K.
I256K.
25SOIC
75CXXA
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Untitled
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COM PONENT KM XX X C XXXX X X X X - XX DEVICE TYPE SPEED •4 : •42: •6 : •23: •28: •93: •75: •65: •6: 60ns •7: 70ns •8: 80ns •10: 100ns •12: 120ns •20: 200ns DRAM VIDEO MEMORY
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OCR Scan
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PDF
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100ns
120ns
200ns
100ns
120ns
150ns
200ns
75CXXA
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SC4M
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : 60ns •7 • 70ns •8 : 80ns •10: 100ns ORGANIZATION • 8 • 9 •16 • 18 X1 X4 X8 X9 X16 X18 PROCESS & POWER •C CMOS, 5V •V CMOS, 3 3V PACKAGE
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OCR Scan
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PDF
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100ns
16M/4K,
16M/2K,
16M/1K,
75CXXA
100ns
SC4M
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samsung 64k nmos static ram
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COMPONENT KM XX X C DEVICE TYPE •4 •42 •6 •23 •28 •93 •75 •65 DRAM VIDEO MEMORY SRAM MASK ROM STANDARD EEPROM Serial EEPROM FIFO PSEUDO ORGANIZATION • 1 : X1 •4 : X4 •8 : X8 •9 : X9
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OCR Scan
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PDF
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100ns
120ns
200ns
100ns
120ns
150ns
200ns
75CXXA
samsung 64k nmos static ram
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