75D DIODE Search Results

PSHI75D-06

Abstract: PSHI75D 75D06
Contextual Info: TM ECO-PAC 2 IGBT Module PSHI 75D/06* H-Bridge Configuration IC25 = 69 A VCES = 600 V VCE sat typ. = 2.3 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 N9 NTC P18 PSHI 75D/06* IGBTs *NTC optional Symbol Conditions Maximum Ratings

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

SUM75N15-18P-E3

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

SUM75N15-18P-E3

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

SUM75N15-18P-E3

Abstract: S-82349-Rev 75D diode
Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

single phase inverter IGBT

Abstract: 3 phase inverter circuit control PM75DHA120 55 volt switching power supply circuit circuit using IC SA 110 single phase inverter powerex inverter pwm INVERTER igbt "single phase" BP107 QDQS777
Contextual Info: POùlEREX INC _ 51E » • 72 T 4 b 2 1 0005772 311 H P R X P M 75D H A 120 '¡zô ' 7 ' X cf Powerex, Inc., mills Street, Youngwood, Pennsylvania 15697 412 925-7272 /n t C l l i t ï 1 0 C P ^ m3 M o d U l G S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Q/ng ie p fjas e

Contextual Info: 3 E Z 3.9D 5 thru 3EZ200D5 Microsemi Corp. $ The û«xa» experts SCOTTSDALE, AZ For more information call: m m s m im s m 602 941-6300 SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V • HIGH SURGE CURRENT RATING • 3 W ATTS DISSIPATION IN A N O RM ALLY 1 W ATT PACKAGE

3SK38A

Abstract: 3SK38 251C
Contextual Info: 3SK O 38A ^ IL IC O N N-CHANNEL MOS FIELD EFFECT TRANSÌSTOR I f s x t l a ^ ''HiSffl INDUSTRIAL APPLICATIONS Unit in mm o Chopper Circuit Applications • * >- * #&39MAX. ; f*s Ron = 5 0 0 n Max. Roff=100Mfi (Min.) 013 Vemf = 2/‘V/'C (Max.) i'' - — h • K u 4 y , ^ — V •V —-*

K1273

Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Contextual Info: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30

SK 30 DB 100D

Contextual Info: SIE J> • Ö13LL71 0003Ö0Ö 4DD M S E K G SEMIKRQN SEMIKRON INC Maximum Ratings Symbol Conditions Values Units lc = 1 A, Vbe = - 2 V 1000 V VcEV Vbe = - 2 V 1000 V VcBO Ie = 0 1000 V V ebo lc = 0 7 V lc ICM If = -lc Ib D. C. 75 tP= 1 ms 150 - 4 0 . . . + 125

Contextual Info: Bulletin 12074 rev.C 02/97 International I S R Rectifier SD823C.C s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w er F A S T re c o v e ry d io d e s e r ie s ■ 2 .0 to 3 .0 Ms re c o v e ry tim e ■ H igh vo lta g e ra tin g s up to 2 5 0 0 V

Contextual Info: Tem ic Si4532DY S e m ic onduc tors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V D S (V ) N -C h a n n e ) P -C h a n n e ) r DS(on) (£2) I d (A ) 0 .0 6 5 @ V G S = 10 V ± 3 .9 0 .0 9 5 @ V GS = 4 .5 V ± 3 .1 0 .0 8 5 @ V Gs = - 1 0 V

BPMB6A ceramic filter

Abstract: bpmb6a
Contextual Info: Audio ICs FM / TV front end BA4425F The BA4425F is a m o n o lith ic 1C d e sig ned fo r FM fro n t end use. It consists o f an RF am p lifie r circuit, m ixer circuit, oscillation circuit, and IF buffer amplifier. Front end •A p p lic a tio n s FM radios

Contextual Info: CM75DU-24H Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DliSl IGBTMOD U-Series Module 75 Amperes/1200 Volts Tc Measured Description: Powerex IG B TM O D ™ Modules are designed for use in switching applications. Each module consists

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ­ ration w ith each tra n s is to r having

t5d diode

Contextual Info: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of tw o IGBTs in a half-bridge configuration w ith each tra n sisto r having a reve rse-connected su pe r-fa st recov­

DP0702

Abstract: dn1001 dn1002 Adams-Russell SDI Microwave diodes dn1002 MIL-I-45208A DP0701 DP-2000 DN1005A DP1005A
Contextual Info: ADAMS-RUSSELL/ I | S D I INC □□0G3Q4 2 |~ V - * T-ZS " Description * Features The DP series of PIN diodes and the DN series of NIP diodes are designed to cover a wide range of applica­ tions th at fall into the general catagories of switching, phase shifting, attenuating and limiting.

CM75DY-24

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching app li­ cations. Each m odule consists of tw o IGBTs in a half bridge co nfig u ­ ration w ith each tra n sisto r having

Contextual Info: 74LS375 Signetics Latch Quad Bistable Latch Product Specification Logic Products FEATURES TYPE • Quad transparent latch • Complementary outputs T Y P IC A L PR O P A G A TIO N D E LA Y T Y P IC A L SU PP LY C U R R E N T TO T A L 1 2 ns 6.3m A 74LS375

75DSA120

Abstract: PM75DSA120
Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM75DSA120 FLAT-BASE TYPE INSULATED PACKAGE N 1. 2. 3. 4. 5. SIDE VN1 SN R CN1 VN C FNO P SIDE VP1 SPR CP1 VPC FPO Description: M itsubishi Intelligent Pow er M od­ ules are isolated base m odules d e ­ signed fo r pow er sw itching app lica ­