75X75X1 Search Results

RD9.1EW

Abstract: RD6A rd6d
Contextual Info: -2 5 1 x tS H p Vz V iz typ max <«*) (•A) min 400 6. 8 7. 14 6. 47 500 6. 32 6 .9 7 200 7. 2 (>. 4 200 Ij. 47 7. 14 1W 7. 2 8. 4 6. 8 200 7 .1 7 i>. 44 150 7. 14 6. 41 150 7 .1 7 6 .4 4 250 5. 2 6. 4 6 .4 10» 5. 2 500 7. 0 7. 9 400 6. 88 7. 64 1W 7. 9

RD22L

Abstract: RD16P RD16S RD18E RD18ES RD18F RD18FM
Contextual Info: - 254- y B RDI 6M RD16P RD16S RD16ÜJ RD16UM RD18E RD18ES RD18F RD18FM RD18J RD18JS RD18K RD18L RD18M RD18P RD18S RD18UJ RD18UM RD19A RD19D RD20E RD20ES RD20F RD20FM RD20J RD20JS RD20K RD20L RD20M RD20P RD20S RD20UJ RD20UH RD22E RD22ES RD22F RD22FM RD22J RD22JS

RD9.1EW

Abstract: RD7A 416B RD6A
Contextual Info: -251 y x t S H m % ft € p <«* RD6.8K R D 6.8L RD6.8M RD6.8MW RD6. 8P Bn RD6.8S RD6. 8UJ RD6.8UM RD6A KD6D RD7. 5E RD7. SES RD7.5F RD7.5FM RD7.5J an RD7.5JS RD7. 5K RD7. 5L RD7. 5M RD7. SMW RD7. 5P RD7. 5S R D 7.5U J R D 7 . 5 UM RD7A RD7D R D 8.2E R D 8.2ES

RD29A

Abstract: RD24A RD22UM RD24D RD24E RD24ES RD24F RD24FM RD24J RD24JS
Contextual Info: - y * + n !£ Vz m iz B RD22UM RD24A RD24D RD24E RD24ES RD24F RD24FM RD24J R D 24 JS RD24K RD24L RD24M RD24P RD24S RD24UJ RD24UM RD27B RD27ES RD27F RD27FM R D 27J R D 27 JS RD27K RD27L RD27M RD27P RD27S RD27UJ RD27UM RD29A RD29D RD30E RD30ES RD30F RD30FM

KBP610

Contextual Info: Suntan Su ® GBJ6005 THRU GBJ610 Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes 6KBJ FEATU R E S ◆Ideal for printed circuit board ◆Reliable low cost construction technique results in inexpensive product

34-AG

Abstract: a 1184 y 27al
Contextual Info: nixYS Silicon Chip Resistors Silicon Chip Resistors are offered only conjunctively to purchase order of further IXYS chips Part Type Chip Dimension n mm mils Resistance CD Wafer Diameter mm Rtt, Notes K/W IXRW 13-AL 1 2.0x2.88x0.43 79x113x17 1184 100 2.5

91x0

Abstract: dimension of chip resistor 1M resistor datasheet chip resistor
Contextual Info: Silicon Chip Resistors Silicon Chip Resistors are offered only conjunctively to purchase order of further IXYS chips Part Type Resistance ¬ Chips per Wafer Wafer Diameter mm Rth ­ Chip Dimension W mm mils IXWW 13-AL 1 2.0x2.88x0.43 79x113x17 1184 100 2.5

r033f

Abstract: R043F R043P RD33ES RD33F RD33FM RD33J RD33JS RD33K RD33M
Contextual Info: - 256- y *i-ns. m RD33ES RD33F RD33FM RD33J RD33JS RD33K RD33L RD33M RD33P RD33S RD33UJ RD33UM RD35A RD35D RD36B RD36ES RD36F RD36FM RD36J RD36JS RD36K RD36L RD36M RD36P RD36S RD36UJ RD36UM RD39E RD39ES RD39F RD39FM RD39J RD39JS RD39K RD39L RD39M RD39P RD39S

RD33K

Abstract: bm 308 an r033f RD33ES RD33F RD33FM RD33J RD33JS RD33M RD33P
Contextual Info: - 256- y *i-ns. m % a « p mir RD33ES RD33F RD33FM RD33J RD33JS RD33K RD33L RD33M RD33P RD33S RD33UJ RD33UM RD35A RD35D RD36B RD36ES RD36F RD36FM RD36J RD36JS RD36K RD36L RD36M RD36P RD36S RD36UJ RD36UM RD39E RD39ES RD39F RD39FM RD39J RD39JS RD39K RD39L

RD6A

Abstract: RD9.1EW RD9.1E 7A SF SC 30
Contextual Info: -251 y x t S H m % ft € p <«* RD6.8K R D 6.8L RD6.8M RD6.8MW RD6. 8P Bn RD6.8S RD6. 8UJ RD6.8UM RD6A KD6D RD7. 5E RD7. SES RD7.5F RD7.5FM RD7.5J an RD7.5JS RD7. 5K RD7. 5L RD7. 5M RD7. SMW RD7. 5P RD7. 5S R D 7.5U J R D 7 . 5 UM RD7A RD7D R D 8.2E R D 8.2ES

RD9A

Abstract: RD10E RD10L RD11J RD11JS RD11S
Contextual Info: - 252- m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL RDI IM RDllP

H118

Abstract: R030P R030M RD24D RD22UM RD24A RD24E RD24ES RD24F RD24FM
Contextual Info: - y * + n !£ Vz m iz B £ tt % p Iz •f> (mA Vz (V ) min ty p m ^. Zzmax ntax Iz (m A ) (O ) mm Iz (mA) (Q ) Iz (m A ) B B a a 1 M n n 150 250 io f 500 400 20. 81 2 0.0 20. 0 22. 22.26 23. 25 2 7.0 27. 0 25. 6 24. 81 5 5 200 5 5 55 100 4 35 35 5 5 200

RB16M

Abstract: RD18L R020f RD22L RD16P RD16S RD18E RD18ES RD18F RD18FM
Contextual Info: - 254- y x tlH B RDI 6M RD16P RD16S RD16ÜJ RD16UM RD18E RD18ES RD18F RD18FM RD18J RD18JS RD18K RD18L RD18M RD18P RD18S RD18UJ RD18UM RD19A RD19D RD20E RD20ES RD20F RD20FM RD20J RD20JS RD20K RD20L RD20M RD20P RD20S RD20UJ RD20UH RD22E RD22ES RD22F RD22FM RD22J

Contextual Info: Suntan Su ® KBJ6005 THRU KBJ610 Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes FEATU R E S Ideal for printed circuit board Reliable low cost construction technique results in inexpensive product

AN8495SB

Abstract: an8495 AN84*9*S AN8495S
Contextual Info: New Stepping Motor Dr ive IC AN8495SB • Overview Unit:mm 18.40±0.20 5.15 (4.80) 28 22 21 15 +0.10 0.30-0.05 8.30±0.20 (1.315) 10.93±0.30 AN8495SB is a stepping-motor-driving IC, created by using a D-MOS process, and provides a maximum output of 30V at 1.5A. By the PWM drive

MOS LSI Design

Contextual Info: AN44069A 37V/1.5A Stepping Motor Driver FEATURES DESCRIPTION • 4-phase input control W1-2 phase excitation enabled AN44069A is a two channels H-bridge driver LSI. • Built-in CR chopping (with frequency selected) Bipolar stepping motor can be controlled by a single

RD22UM

Abstract: RD24A RD24D RD24E RD24ES RD24F RD24FM RD24J RD24JS RD24K
Contextual Info: - y * + n !£ Vz m iz B RD22UM RD24A RD24D RD24E RD24ES RD24F RD24FM RD24J R D 24 JS RD24K RD24L RD24M RD24P RD24S RD24UJ RD24UM RD27B RD27ES RD27F RD27FM R D 27J R D 27 JS RD27K RD27L RD27M RD27P RD27S RD27UJ RD27UM RD29A RD29D RD30E RD30ES RD30F RD30FM

RD5.6S

Abstract: 610C 3420B
Contextual Info: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min typ 400 400 SOO 200 200 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 Vz <D X SÜÆ Vz (V) lz max Iz <mA) Zzmax (fi) M it I z(mA) 5. 37

r033f

Abstract: RD33ES RD33F RD33FM RD33J RD33JS RD33K RD33M RD33P RD33S
Contextual Info: - 256- y *i-ns. m RD33ES RD33F RD33FM RD33J RD33JS RD33K RD33L RD33M RD33P RD33S RD33UJ RD33UM RD35A RD35D RD36B RD36ES RD36F RD36FM RD36J RD36JS RD36K RD36L RD36M RD36P RD36S RD36UJ RD36UM RD39E RD39ES RD39F RD39FM RD39J RD39JS RD39K RD39L RD39M RD39P RD39S

r033f

Abstract: RD33ES RD33F RD33FM RD33J RD33JS RD33K RD33M RD33P RD33S
Contextual Info: - 256- y *i-ns. m RD33ES RD33F RD33FM RD33J RD33JS RD33K RD33L RD33M RD33P RD33S RD33UJ RD33UM RD35A RD35D RD36B RD36ES RD36F RD36FM RD36J RD36JS RD36K RD36L RD36M RD36P RD36S RD36UJ RD36UM RD39E RD39ES RD39F RD39FM RD39J RD39JS RD39K RD39L RD39M RD39P RD39S

RD24A

Abstract: RD29A RD22UM RD24D RD24E RD24ES RD24F RD24FM RD24J RD24JS
Contextual Info: - y * + n !£ Vz m iz B RD22UM RD24A RD24D RD24E RD24ES RD24F RD24FM RD24J R D 24 JS RD24K RD24L RD24M RD24P RD24S RD24UJ RD24UM RD27B RD27ES RD27F RD27FM R D 27J R D 27 JS RD27K RD27L RD27M RD27P RD27S RD27UJ RD27UM RD29A RD29D RD30E RD30ES RD30F RD30FM

GBJ610

Abstract: GBJ6005 GBJ601 GBJ602 GBJ604 GBJ606 GBJ608
Contextual Info: GBJ6005–GBJ610 Vishay Lite–On Power Semiconducter 6.0A Glass Passivated Bridge Rectifier Features D D D D D D Glass passivated die construction High case dielectric strength of 1500VRMS Low reverse leakage current Surge overload rating to 170A peak Ideal for printed circuit board applications

KBP206G

Abstract: KBP2005G KBP201G KBP202G KBP204G KBP208G KBP210G E95060
Contextual Info: KBP2005G–KBP210G Vishay Lite–On Power Semiconductor 2.0A Glass Passivated Bridge Rectifier Features D D D D D D Glass passivated die construction High case dielectric strength of 1500VRMS Low reverse leakage current Surge overload rating to 65A peak Ideal for printed circuit board applications

Contextual Info: GBJ6005 THRU GBJ610 Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes Package: 6KBJ FEATURES ◆Ideal for printed circuit board ◆Reliable low cost construction technique results in inexpensive product