7626 TRANSISTOR Search Results

BUK7526-100B

Abstract: BUK7626-100B
Contextual Info: BUK75/7626-100B TrenchMOS standard level FET Rev. 01 — 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

relay SR7626

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details SR-7626 Product Details Military/Aerospace High Performance Relays

7626 transistor

Contextual Info: SR-7626 Product Details Military/Ae rospace High Pe rform an ce Re lays Not reviewed for RoHS Compliance Previous 1 . 16 17 18 [19] 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product

2SA1547

Abstract: 2SA1548 2SA874M 2SA937M 2SA937MLN 2SC2021MLN 2SC202M 2SC4010 2SC4776M 2SC4778
Contextual Info: Transisto rs <Pin Inserting Types> ROHM CO LTD SbE D • 7626^ 0007034 044 ■ RHM ■ATR • ATV -T -2-7 -Z l Almost the same size as TO-92 but 1W Pc package type. Taped type for automated placement; or bulk specification. Package Application ATR Vc e o V

Transistor KU 607 VC

Abstract: KU 607 VC M 607 Transistor KU 607
Contextual Info: Video tCs Video signal switcher for AV amplifiers BA7626/BA7626F T he B A 7626 and B A 7626F are video signal switches that contains two five-chan nel analog multiplexers for switching chrom a and audio signals, and two w id e -b a n d 6dB amplifiers. By simply addi ng transistor buffers to the outputs, it is pos­

Contextual Info: ROHM CO L T D i> 40E ' 7626^1 OQQSS7S h 7 > ÿ ^ i f / T ransistors Ô ^IRHM 2SB1186 T -2 3 -t - 2 S B - f U — r m P H P 1 1 ; h 7 > y X <? Î î ! E J l } $ l Ì : f t i Ì lÌÌffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor

Contextual Info: ROHM CO LTD 40E D B9 7626^ Q 0 0 5 S2 7 /I ransistors I fl H R H N 2SB1064 — 7=33-1*} “ y'J-\> 2 : h 7>V ^$ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor » fi 1 • ^ J f ^ iiH / Z D im e n s io n s U n it: mm) V c E (s a t)= 0 .5 V (T y p . )

D1980

Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated

marking code MH5

Abstract: DTC124EK DTC114EK UMB10 UMH8 DTA114EK MB11 UMB11 UMH3
Contextual Info: Digital Transistürs<S urface Mounted Types> • 7 0 2 8 ^ 0GG774=J ^41 ■ RHÎ1 [6 pin type including 2 Independent circuits] Tow transistors with b u ilt-in resistors digital transistors in 2125 type and 2916 type packages. The two digital transistors

TRANSISTOR d1760

Abstract: 2SD1760F5
Contextual Info: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMH3N / IMH3A •E x te rn a l dim ensions (Units: mm) • F e a tu re s 1) T w o D T A K 13 T in U M T an d SM T IMH3A UMH3N packages. 2.0 ± 0.2 2) M o u n tin g p o s s ib le w ith UM T3 o r

Z7-27

Contextual Info: S -7 /Transistors IMT1 ROHM CO LTD I M T 40E D Si T flE Û 'm OQObmi 1 5 E3RHM 7 -2 7 -2 7 — M 'it • ^ - ii'Ü f f l/G e n e r a l Small Signal Amp. Isolated M ini-M old Device • ¿'tJfé'vJ'üISl/D im ensions Unit : 1 SMT (SC-59) ¿ ( S l - ^ Î f t C 2f@CD h

TRANSISTOR 636

Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
Contextual Info: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation

ic tms 1000

Abstract: 2SB1130M 2SB1236 2SD1665M 2SD1857 CLZ80
Contextual Info: ROHM CO LTD 4QE 7û2flem D b s7 > y X ^ i //Transistors S B 1 1 3 0 M x e * * ^ 'T J [ / y 0 ^ 2 S 3 1 2 3 S ^ R HM 2SB1130M /2SB1236 - — • 7 ^ 7 - 2 ! — 2 000555M 0 • PNP ^ u 3 v h ^ > * p ° w e r A m p- Epitaxial Planar PNP Silicon Transistors

FMS1 T148

Abstract: FMS2 T148
Contextual Info: h7 £ /Transistors FM S1/FM S2 ROHM CO L T ]> 40E FMS1 FiV3S2 i t ‘ if + y a ? ] ; i • ? 0 2 ä cJc3tl / 00Db330 S B IR H tl - PNP '> y a > h v > v 7 > $ 5- ï - K — ^ h fl^ -iiiiffl/G en eral Small Signal Amp. Epitaxial Planar Dual Mini-Mold PNP Silicon Transistors

JD 1803

Abstract: 2SA1870 100V 2A MPT3 2SA1900 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870
Contextual Info: 2SA1870 Transistor, PNP Features Dimensions U n its : mm • available in PSD package • low collector saturation voltage, typicallyVCE(sat) = -0.2 V a t lc/lB = -6A /-0.3A • high switching speed, typically tf = 0.17 (AS for lc = -6 A • wide safe operating area (SOA)

2SD2008

Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application

Contextual Info: Regulator ICs DC-DC converter BP5020/BP5021 /BP5022 The BP5020, BP5021, and BP5022 are DC-DC converter units that use a pulse width modulation PWM system. They contain control circuits, switching devices, rectifiers, and coils, and operate by only connecting an I/O

BA6860FS

Abstract: BA6862FS transistor a3h
Contextual Info: Motor driver ICs 3-phase motor driver BA6860FS/BA6862FS The BA6860FS and BA6862FS are 3-phase, full-wave, pseudo-linear motor drivers suited for driving movie camera capstan motors that can be operated at low voltages. The ICs have a torque ripple cancellation circuit to reduce

A933

Abstract: A933 S BA7626F BA7626FS SSOP-A16 a933 transistor
Contextual Info: High performance video signal switcher Five inputs Dual Circuits Video Signal Switchers BA7626F,BA7626FS No.11066EAT01 ●Description The BA7626F/FS is a 5-input video signal switching circuit with a broadband 6 dB amplifier that was developed for AV amplifier input switching. Just by devising a transistor buffer in the output, player switching of two VCR or other videotape

VLN 2003

Abstract: BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF BA12004B high current darlington transistor
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting o f seven circuits o f Darlington transistors.

marking R1P

Abstract: SST2222A RXT2222A FDCT2222A MMST2222A PN2222A T100 T106 T116 T146
Contextual Info: Transistors NPN Medium Power Transistor Switching I UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •Package, marking and packaging specifications

marking bt5

Abstract: MMST2907A PN2907A RXT2907A SST2907A T106 T116 UMT2907A
Contextual Info: Transistors PNP Medium Power Transistor Switching I UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A •F e a tu r e s 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complem ents the UM T2222A/SST2222A/M M ST2222A/ RXT2222A/PN2222A. •E x te r n a l dim ensions (Units : mm)

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­