7785 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39 V 7785A e h « "* r\f! No««* " ' ”mew clW s=^<>8ton’ 7 .7 — 8 .5 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 7 8 5 A is a n in te rn a lly im p e d a n c e -m a t c h e d

HH-1174-10

Abstract: 030-31
Contextual Info: JMK. Inc. USA JMK Inc 15 Caldwell Dr. Amherst, NH 03031 EUR JMK Inc Glasgow G13 1DN Scotland UK HH-1174-10 PH: 603 886-4100 FX: 603 886-4115 email: info@jmkfilters.com PH: 44- 0 7785310729 FX: 44-(0) 141-589-1884

77803

Abstract: 1x24
Contextual Info: Winchester Electronics Presents. 7785 Series Dual Video Jackfields Standard Size Analog or Digital SD or HD Compliant Product Benefits 75 Ohm performance suitable for Analog, Serial Digital, and HDTV Dual Video Jacks mounted to standard 19” panels Mates with standard-sized patch

5527G

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 7785 7 .7 —8 .5G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8,5 G H z band amplifiers. The herm etically sealed metal-ceramic

77803

Contextual Info: 7785 Series Product Benefits Standard-Size Dual Video Jackfields 75 Ohm performance suitable for Analog, Serial Digital, and HDTV Dual Video Jacks mounted to standard 19” panels Mates with standard-size patch plugs 0.37” diameter, 0.090” center pins

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B preU 'i ‘" ' 7 .7 ~ 8 .5 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 4 0 V 7 7 8 5 B is an internally im ped an ce-m atched GaAs power F E T especially designed fo r use in 7 . 7 - 8 . 5

Contextual Info: June 1997 PRELIMINARY 7785-35SL TIM 7785-35SL CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB Compression Point Power Gain at 1dB GidB VDS= 10V f=7.7-8.5 GHz Compression Point Drain Current

7785-12DA

Contextual Info: F L M 7785-12DA Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz

7785A

Abstract: FC36V
Contextual Info: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *

Contextual Info: Standard / HDTV Video Jackfields - 7780 Series 7780-1 Video Jack with Jackfield 7785-8 • High Definition Standard Size Dual-Self Normal Video Jack: Analog, Serial Digital and HDTV Broadcasting. • Impedance: 75 ohms nominal. • Density: Up to 28 Jacks per panel. 1, 1.5 and 2 rack unit high panels.

TIM7785-35SL

Contextual Info: June 1997 PRELIMINARY TIM 7785-35SL T IM 7785-35S L CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB — 8.0 Compression Point Power Gain at 1dB GidB Compression Point VDS= 10V f=7.7 -8 .5 GHz Drain Current

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

7785

Abstract: hd 7780 video 77803 2x26
Contextual Info: Winchester Electronics Presents. 7785 Series Dual Video Jackfields Standard Size Analog or Digital SD or HD Compliant Product Benefits 75 Ohm performance suitable for Analog, Serial Digital, and HDTV Dual Video Jacks mounted to standard 19” panels Mates with standard-sized patch

7785A

Abstract: C39V7785A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 7785A 7 .7 8.SG Hz BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7 . 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> pvoduction MGFC36 V 7785 p la n * ° r d ,s c o n t .n u e 7.7 ~ 8.5G H z BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M 7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7.7 ~ 8.5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC 40V 7785A ^ 0. . 7 7 —8.5G H z BAND lO W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 40V 7785A is an internally impedance-matched GaAs power FET especially designed fo r use in 7 .7 —8 .5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B •b e U 7 .7 —8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e-m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785 7 .7 —8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 - 8 . 5

THERMAL RUNAWAY IN RECTIFIER

Abstract: MC20400 MHz rectifier Oltronics 200 Amp current 1000 volt diode 400 amp 20 volt rectifier
Contextual Info: . 6 7785 94 OL T R O N IC S INC . Z '. 42 DE I k 7705^ 4 00 00 05 e] b | OLTRONICS, INC. 73 Tremont S t Boston, MA 02108 D -f" &Ì ' t? Data Sheet No. 88308 Power Schottky Diodes Semiconductor O.EM. Tel. 617 3 5 4 -6 534 20 AMP, 400 Volt Power Schottky Rectifier

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz

DIN 46330

Abstract: RS 7901 F din 46247 din 46247 6.3-2.5 DIN 7603 46247 7603-001 2018 7900F 7900/F
Contextual Info: Flachsteckhülsen Receptacles Lötfr eie Flachsteckhülsen ohne Isolation Lötfreie Solderless rreceptacles, eceptacles, non insulated Artikel-Nummer ähnlich Part number similar to DIN 46247 z RS 7785.003 F 2,8-1 Leiterquerschnitt Wire size mm² AWG Steckdicke

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> P B E V -' M G FC 40V 7785A \\ sp«“'-' are 5 7«7 8 .5G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 A ts a n internally im pedance-m atched GaAs power FET especially designed fo r use in 7 .7 —8 .5

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