778MM Search Results

Contextual Info: SD Series - Precision Shrink Sockets i,778mm/.070“pitch E-tec the Sw iss connection „Break-away“ Shrink SIP Open & Closed Frame Shrink DIP Terminal Styles 1 .4 4 .0 5 6 3 .1 7 .1 2 4 118 Standard terminal 081 Wire-wrap terminal 1.32 rosi 3.S3 .154 3.96

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. S E A T IN G g ST1332 G ood optical to m echanical alignm ent SYMBOL INCHES MIN. MAX. A <f>b MILLIMETERS MIN. .255

Contextual Info: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021

Contextual Info: FQ B GaAs INFRARED EMITTING DIODE wmm* OPTOELECTRONICS CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES Good optical to mechanical alignment SYM BO L IN C H E S MIN. A M ILLIM ETER S MAX.

Contextual Info: E HERMETIC SILICON PHOTODARLINGTON 9 iP iß u u iR im c s BPW38 ' PACKAGE IHMEMSIONS Tfce BPW38 is a silicon photadarlington mounted in a narrow angle TO-18 package. SYMBOL A •D , a 6: h tNCHES MIN. MAX. .225 -256 .021 .Olfi .209 .230 .195 .178 iQCNQM .050 NOM

ST10M

Contextual Info: E O 8 GaAs INFRARED EMITTING DIODE P?ßfLiCTBSiiCS 1N6264 The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. ST1332 • Good optical to mechanical alignment SYMBOL A j»b «D &C, e «. rt i k L » INCHES MAX. MIN 255 ,01S .021 .230 ,iac .<86 .100 NOM.

Contextual Info: CXA1293M/N Sony. Low Power FM IF Amplifier Description The C X A 1 2 93 M /N are single-chip ICs FM radio such as CELLULAR mobile, etc. C XA1293M 24pin SOP Plastic CXA1293N 24pin VSOP (P lastic) Features • Low current consum ption (lcc = 3.8m A ,at VCC=3.6V )

LTA 902 sx

Abstract: 3SK166
Contextual Info: 3SK166 Sony. GaAs N-channel Dual-Gate MES FET Description Package Outline 3 S K 166 is a GaAs N-channel Dual-Gate MES FET fo r lo w noise UHF am plifiers. Low noise and high gain characteristics are accom plished by optim um mask pattern design. Easier high frequency circuits adjust­

ST1604

Abstract: LED55B LED56 MA171 st1332 LED55C
Contextual Info: so GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G FEATURES ST1332 SYM BOL IN C H E S MIN. A MAX. M ILL IM E T E R S MIN. .255

cfvm455

Abstract: CXA1484M CXA1484N 4 PIN THROUGH HOLE TRANSISTORS CDBM455 Shrink Zig-Zag In-line Package
Contextual Info: CXA1484M/N SONY. Low Current Consumption FM IF Amplifier for Double Conversion Pagers Description T h e C X A 1 484 M /N is a low current consumption FM IF amplifiers which employ the newest bipolar process. It is suitable for double conversion pagers for overseas

amplifier - ATH 226

Abstract: mobile control car a2c0 sony car volume chip
Contextual Info: CXD1271Q/R SONY, Cellular Telephone Filter LSI Description The CXD1271Q/R is a filter LSI chip designed for the cellular telephone. A successor to the already marketed CXD1237Q/R, this LSI chip conforms to the N-TACS standards and is easy to adjust as it allows serial data

CXD1233BM

Abstract: cxd1233 CXD1233BQ 20 mhz through hole crystal oscillator CXD12338M line code manchester Manchester code manchester
Contextual Info: CXD1233BM/BQ SONY. Cordless Telephone Modem IC Description CXD1233BM/BQ developed for cordless tele­ phones, provides a modem when used in con­ junction w ith microcomputor and filter. Features • Uses the low error rate manchester code, de­ coder and encoder.

Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode

st1029

Abstract: L14G ST1026 T125 f5d1 diode ST10-30 MA7 diode 3143 diode ST1025 ST1030
Contextual Info: EO AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5D1/2/3 PACKAGE DIMENSIONS DESCRIPTION The F5D series is 880nm LEDs in a narrow angle, TO-46 package. SEATING FEATURES ST1332 SYMBOL A $3, e ei h i k L a * Good optical to mechanical alignment INCHES MfN. MAX.

ST1026

Abstract: ST1025 ST1331 DIODE T 25-4 jo ST1028
Contextual Info: E*Q AIGaAs INFRARED EMITTING DIODE OPTOELECTBOHiCS F5E1/2/3 PACKAGE DIMENSIONS DESCRIPTION The F5E series is 880nm LEDs in a wide angle, TO-46 package. SEATING FEATURES • Good optical to mechanical alignment SYMBOL INCHES MIN. A 0b fa e . MIN. MAX. 3.93

ST1076

Abstract: L14F2 ST1333 l14f1 ST-107 of94
Contextual Info: HERMETIC SILICON PHOTODARLINGTON OPTOELECTRONICS L14F1/2 PACKAGE DIMENSIONS DESCRIPTION The L14FX is a silicon photodaiiington mounted in a narrow angle, TO-18 package. ¿b-g*- SYMBOL A 40 40, e e, h I k L a FEATURES INCHES MIN, MAX 255 ,225 .016 ,021 .209

p 421 optoisolator

Abstract: 421 opto isolator bo 947 bo 615
Contextual Info: Dim ensional O utlines Package Designations TO-18 Style Hermetic Package »57 2-Lead with Flat Window 2-Lead with Lens 3-Lead with Flat Window 3-Lead with Lens 6-Pin Dual-in-Line Plastic Package #295 #296 Optolsolator Standard Version Lead-Formed #297 #298

st 1086

Abstract: L14G1 phototransistor L14G1 ST-1605 ST1087
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister m ounted in a narrow angle, TO -18 package. FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A .225 .255 5.71 6.47

a 3131 opto

Contextual Info: GaAs INFRARED EMITTING DIODE PT0 ELEC1 RÛIICS 1N6265 PACKAGE DIMENSIONS II DESCRIPTION Th e 1N 6265 is a 940nm LED in a wide angle, TO-46 package. SEATIN G FEATURES ST1331 SYM BO L Good optical to m echanical alignm ent IN C H E S M IL L IM E T E R S MIN.

t 935

Abstract: 1r 10e T935
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. SEATING a FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A <£b 40 e 01 h MAX MILLIMETERS

LED56F

Abstract: phototransistor 940nm
Contextual Info: G aA s INFRARED EMITTING DIODE DPTOELECÏBOIIICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING 3 FEATURES Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMFTERS

OF LED 55B

Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Contextual Info: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of

ST1254

Abstract: ST-125-4 BFW36
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR 6PT8 E lECTBOH t CS BPW36/BPW37 The BFW36/37 are silicon phototransisters mounted in narrow angle TO-18 packages. o SYMBOL A 80 »0 #0, e e. h i K i. » INCHES MIN. MAX .226 .255 .016 .021 .209 .230 .J?8 .196 .100 MOM .QSC MOM