77D PH Search Results

Contextual Info: Filename: tfs 77d.doc Version 1.2 VI TELEFILTER 12.05.2006 Filter specification TFS 77D 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 25 °C dBm 61 Ω | -70,9 pF 57 Ω | -82,6 pF Characteristics

Contextual Info: TOSHIBA TENTATIVE TLP224GJLP224G-2 TOSHIBA PHOTOCOUPLER Tl P 77d d • g GaAs IRED & PHOTO-MOS FET Tl ■ P77AG-? ■ 'W M O D EM S U nit in mm PBX 4 TLP224G 3 ti rr Ai !_2!=, TELECOMMUNICATIONS The TOSHIBA TLP224G series consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a

Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7 ^ 4 1 4 2 DDlSb30 77D ■ SM6K KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM 41C4002B is a C M O S high speed 4,194,304 x 1 Dynamic Random A cce ss Memory. Its de­

PH 17D

Contextual Info: AM PHEN O L D -SU B M IN IA TU R E 17D/117D F SERIES FIXED M A C H IN ED C O N TA C T IN D U S T R IA L CO N NEC TO R A m ph en ols 17D and 117DF series are a fixed co n ta ct heavier du ty D-sub suitable for com m e rcial or industrial use. The m achined co n ta cts provide stability and

Contextual Info: 3 4 '— ~i r I o I I 1 I o" ^ * T C\l 1 \l Mv V 00.60 - 00.20 00.90 — tj> / O Pitch C\l RECOMMENDED P.C.B LAYOUT (TOLERANCE + /- 0 . Customer drawing D IN / L S ^ ^ ^ ^ H E L L 9 15 25 37 A B 30.70 39.00 52.90 69.20 16.40 24.80 38.50 54.90 C D 25.00 10.96

ceramic crystal

Contextual Info: PLETRONICS RoHS 6/6 Compliant Crystal Controlled Oscillators LVDS OUTPUT LV55D Series LV77D Series LCC Ceramic Package 3.2 x 5.0 x 1.35 mm • 3rd Overtone crystal • Enable/Disable function on pad 1  Small SMD package for high density board designs LCC Ceramic Package

Contextual Info: DATA SHEET LASER DIODE NDL7620P Series 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NDL7620P Series is a 1 310 nm A/4-phase-shifted DFB Distributed Feed-Back laser diode coaxial module

BFQ32M

Contextual Info: Philips Semiconductors bbBB'lBl 0031541 fi34 M APX Product specification PNP 4 GHz wideband transistor I BFQ32M . N Af1ER DESCRIPTION philips /discrete ERE PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • • • PACKAGE DRAWING Unit: mm High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)

S4874

Abstract: S4871 S5464 linear cmos SENSOR infrared CMOS sensor
Contextual Info: S-8. N-MOS Linear Image Sensors IR-enhanced Types S4871 Series. S4874 Series High sensitivity in the infrared range useful for soft X-ray detection This linear image sensor has been designed for higher sensitivity in the infrared range than conventional linear sensor. The wavelength of peak

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It

Contextual Info: DATA SHEET_ NEC N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAsMESFETdesigned forhigh power transmitter applications for PCS, DCS and PHS base station systems. It is capableof delivering 50 wattsof output power CW

DIODES BYD

Contextual Info: 107 Rectifiers vF max lF (AV) (max) Package Type (A) VRRM (V) *FSM (A) 200 400 20 20 600 800 20 20 20 20 @ lp (A) (V) trr (max) (ns) GENERAL PURPOSE BYD 17D S O D -8 7 1 .5 BYD 17G BYD 17J S O D -8 7 S O D -8 7 S O D -8 7 1 .5 1 .5 BYD17K BYD 17M P R LL4001

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3T31 DDETISS OES BLV94 Jl IAPX UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz communication band. Features

SLD104AU

Abstract: SLD105UL
Contextual Info: SONY SLD105UL1 GaAIAs Laser Diode Description Package Outline Unit : mm The SLD 105U L is a low-noise laser diode developed fo r the positive pow er supply. In com parison with the SLD 104AU , even lower pow er consum ption is achieved. Features • Low current consum ption

1AMN

Abstract: amphenol wire to board connectors 777DF
Contextual Info: AMPHENOL D-SUBMINIATURE FIXED MACHINED CONTACT INDUSTRIAL CONNECTOR 17D/117DF SERIES Amphenol's 17D and 117DF series fixed contact D-subminiature connector is suitable for commercial or Industrial use. The machined contacts provide stability and reliability.

Contextual Info: ¿77 SGS-1H0MS0N * J I . M » I I U M W P @ i _ L 6 2 3 4 THREE PHASE MOTOR DRIVER ADVANCE DATA . SUPPLY VOLTAGE FROM 7 TO 58V . 5A PEAK CURRENT . DC MAX CURRENT T ^ = 70°C ♦ 1.5A(SO(16+2+2 ♦ 4A (PowerS020) • R ds on 0.3Q TYP VALUE AT 25°C

Contextual Info: D-ST S cre w T e rm in a tio n D 'S u b series CO C onnectors acco rding to : M IL C 243 08 - NFC 93425-HE5 The Amphenol Screw Termination M aterials and platings Shells Steel Tin plated cn Insulator Glass filled thermoplastic, UL94V-0 UJ C ontacts Machined tra s s for ptey full gold

laser diode sony cd

Abstract: laser diode 780 nm cd SLD303V SLD303V-1 SLD303V-2 SLD303V-21 SLD303V-3 300 mw IR Laser Diode
Contextual Info: SLD303V SONY, 500mW High Power Laser Diode For the availability of this product, please contact the sales office. D e s c rip tio n P a cka g e O u tlin e U n it: m m SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition

Sony 104A

Abstract: SLD104AU SLD105UL
Contextual Info: SONY SLD105UL GaAIAs Laser Diode o r the a v a ila b ility -p f th is p r o d u c t ,-pt-*ase-e o n ta c t tho s a le s -efftee-. Description Package O utline U n it : mm The SLD 105U L is a low-noise laser diode developed fo r the positive pow er supply. In com parison with the

AJ3 amphenol

Abstract: AMPHENOL 117D
Contextual Info: AMPHENOL D-SUBMINIATURE 17D/117DF SERIES FIXED MACHINED CONTACT INDUSTRIAL CONNECTOR Amphenol's 17D and 117DF series fixed contact D-subminiature connector is suitable for commercial or industrial use. The machined contacts provide stability and reliability.

10h100c

Contextual Info: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars

Contextual Info: R C H II- D S E M IC O N D U C T O R tm MM74HC00 Quad 2-Input NAND Gate General Description Features These NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS in­

Contextual Info: TOSHIBA TC74VH CTOO F/FN/FS TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT00F, TC74VHCT00FN, TC74VHCT00FS QUAD 2 -INPUT NAND GATE The TC74VHCT00 is an advanced high speed CMOS 2INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to