7922 DIODE Search Results
7922 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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CUZ6V8 |
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Zener Diode, 6.8 V, USC |
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CEZ5V6 |
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Zener Diode, 5.6 V, ESC |
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CUZ6V2 |
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Zener Diode, 6.2 V, USC |
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CUZ30V |
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Zener Diode, 30 V, USC |
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7922 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: S 9 P S P T 7922 T 12-BIT, 30 MSPS, TTL, A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 64 dB SNR @ 3.58 MHz Input On-Chip Track/Hold |
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12-BIT, 12-Bit SPT7922 12-bit SPT7922 D0-D11 | |
LP 8029
Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
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CQY37N BPW17N D-74025 LP 8029 DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N cqy 17 | |
Contextual Info: CQY37N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. |
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CQY37N CQY37N BPW17N D-74025 20-May-99 | |
BPW17
Abstract: CQY37N BPW17N
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CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17 | |
BPW17
Abstract: BPW17N CQY37 CQY37N
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CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17 CQY37 | |
CQY37Contextual Info: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. |
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CQY37N CQY37N BPW17N D-74025 29-Mar-04 CQY37 | |
Contextual Info: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. |
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CQY37N CQY37N BPW17N D-74025 05-May-04 | |
CQY37Contextual Info: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. |
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CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 08-Mar-05 CQY37 | |
Contextual Info: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. |
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CQY37N CQY37N BPW17N D-74025 20-May-99 | |
BPW17N
Abstract: CQY37N BPW17
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CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17 | |
Contextual Info: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. |
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CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 18-Jul-08 | |
BPW17
Abstract: telefunken BPW17N CQY37N
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CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17 telefunken | |
CQY37N
Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
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CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 18-Jul-08 7922 diode BPW17 Infrared Emitting Diode BPW17N | |
BPW17
Abstract: BPW17N CQY37N
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CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 30-Mar-06 BPW17 | |
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Contextual Info: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage |
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CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 2002/95/EC. 2011/65/EU. JS709A | |
BPW17N
Abstract: CQY37N
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CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 11-Mar-11 BPW17N | |
BPW17
Abstract: BPW17N CQY37N
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CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 08-Apr-05 BPW17 | |
BPW17
Abstract: BPW17N CQY37N
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CQY37N CQY37N BPW17N 2002/95/Eed 08-Apr-05 BPW17 | |
12109Contextual Info: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage |
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CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 950trademarks 2011/65/EU 2002/95/EC. 12109 | |
siemens m
Abstract: sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor CCD76-40
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CCD76-40 DHA-PC14-3G DHA-HPD14-10 CCD76-40, siemens m sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor | |
SN54152
Abstract: SNS4151A sn7451b
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SN54150, SN54151A, SN54152A. SN54LS151, SN54LS152, SN54S151, SN74150, SN74151A, SN74LS151, SN74S151 SN54152 SNS4151A sn7451b | |
7400ASContextual Info: Control & Measurement PRODUCT Catalogue www.trumeter.com 03 Dear Customer, It is with great pleasure and pride that I write this introduction to our brand new product catalogue. This is the best catalogue that we have ever produced and contains exciting new products, as well as all the core products that |
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240VAC/DC, 7400AS | |
sn74181
Abstract: 7B222 SN74LS1S1 SN741S1
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SN54LS181, SN841B1, SN54LS1S1, SN54S181 SN741S1, SN74LS1S1 8N74S181 7S222 sn74181 7B222 SN741S1 | |
TFK 839
Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
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