79A DIODE Search Results

79a diode

Abstract: diode 79A VPS05163 W301
Contextual Info: BAS 79A . BAS 79D Silicon Switching Diodes • Switching applications 4 • High breakdown voltage • Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration Package BAS 79A BAS 79A 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79B BAS 79B

LE 79A

Abstract: diode MARKING CODE 917 a915 BAS79D
Contextual Info: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C

79a diode

Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Contextual Info: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2

FDPF79N15

Abstract: FDP79N15
Contextual Info: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V

T0311

Contextual Info: 35E D m ÔS3b3B0 QOlbSlT 1 « S I P Silicon Switching Diodes X~ BAS 79A. BAS 79b _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage • Com m on cathode T yp e M arking O rde ring c o d e 12-tnm tape

FDP79N15

Abstract: FDPF79N15
Contextual Info: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V

FDA79N15

Contextual Info: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)

79a diode

Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
Contextual Info: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)

FDB2532

Abstract: FDI2532 FDP2532 AN-7517 RG101 TO262AB FDP2532 Mosfet
Contextual Info: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • rDS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 86nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

BAS79A

Abstract: BAS79B BAS79C BAS79D VPS05163 Marking 2c1
Contextual Info: BAS79A.BAS79D Silicon Switching Diodes
Switching applications 4
High breakdown voltage
Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration BAS79A BAS 79A 1 = A1 2=C1/2 3 = A2 BAS79B BAS 79B 1 = A1 2=C1/2 3 = A2 BAS79C BAS 79C

Contextual Info: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDP2532

Abstract: FDB2532 marking 33a on semiconductor FDI2532 an7517
Contextual Info: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDP2532 Mosfet

Contextual Info: FDB2532 / FDP2532 N-Channel UltraFET Trench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 86nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDB2532

Contextual Info: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

ba sot223

Abstract: ba sot89 DS410
Contextual Info: SILICON PLANAR DUAL HIGH VOLTAGE SWITCHING DIODES IN SOT89 AND SOT223 PACKAGES BAS79A-D SOT223 BAW79A-D (SOT89) PARTM ARKING DETAIL BA W 79A - GE B A W 7 9 B -G F BAW 79C - GG BAW 79D - GH BAS79A 1 BA S79A \ DEVICE TYPE IN B A S79A I FULL B A S79A I ABSOLUTE MAXIMUM RATINGS

marking A1 SOT89

Abstract: C1 SOT89 marking A2 SOT89 BAW79A BAW79B BAW79C BAW79D C123 Marking gg SOT89
Contextual Info: BAW79A.BAW79D Silicon Switching Diodes 1
Switching applications 2
High breakdown voltage 3
Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW79A GE 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79B GF 1 = A1 2 = C1/2 3 = A2 SOT89

Contextual Info: SIEMENS SITAC AC Switches B R T11 B R T12 BRT 13 AC switch w ith ou t zero-voltage d e te cto r con sistin g o f two e le ctrica lly insulated lateral pow er ICs w hich integrate a th y ris to r system, a photo d e tector and noise suppression at the o u tput and an IR GaAs diode at the input.

Contextual Info: SEMICONDUCTOR KU2307D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.

Contextual Info: SEMICONDUCTOR KU2307K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.

Contextual Info: SEMICONDUCTOR KU054N03D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.

BAW78D

Abstract: BAW78 BAW79D tp200 marking GD
Contextual Info: BAW78./BAW79. Silicon Switching Diodes
Switching applications
High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: SIEMENS Silicon Switching Diodes BAW 79 A BAW 79 D • For high-speed switching • High breakdown voltage • Common cathode Type Marking Ordering Code tape and reel BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733

79AB

Abstract: 3G SOT223 MARKING
Contextual Info: SIEMENS Silicon Switching Diodes BAS 79 A . BAS 79 D • Switching applications • High breakdown voltage • Common cathode Type BAS BAS BAS BAS 79 79 79 79 A B C D Marking Ordering Code tape and reel BAS BAS BAS BAS Q62702-A914 Q62702-A915 Q62702-A916

diode marking gg 2a

Abstract: BAW79C 79AB
Contextual Info: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF