7A, 100V FAST RECOVERY DIODE Search Results

Contextual Info: AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

Contextual Info: AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

k07n120

Abstract: Q67040-S4280 PG-TO-247-3 SKW07N120
Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

Contextual Info: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V

LT4352

Abstract: 1000 volt mosfet mosfet irf3710 TRANSZORB 24v DE14 FDB3632 LN1351C MBR10100 IRF3710
Contextual Info: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V

LTC4352

Abstract: lt 0210 ORing fet 48v 5a DE14 FDB3632 LN1351C MBR10100 ZENER DIODE 1.23V 7A, 100v fast recovery diode IRLR3110
Contextual Info: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V

SKW07N120

Contextual Info: Preliminary SKW07N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

K02N120

Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

K02N120

Abstract: fast recovery diode 2a trr 200ns
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

K02N120

Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation  Short circuit withstand time – 10 s

k07n120

Abstract: PG-TO-247-3 SKW07N120 Diode 25a 800v
Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

SKW07N120

Abstract: inverter 4v to 12v infineon igbt 1200v 600A
Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

Contextual Info: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors Description Features n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V

K02N120

Abstract: k02n12 SKP02N120
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • Lower Eoff compared to previous generation  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter - SMPS  NPT-Technology offers:

SKP02N120

Abstract: 15v 60w smps smps 10w 5V SKB02N120
Contextual Info: SKP02N120 Preliminary SKB02N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter

Q67040-S4279

Abstract: FAST RECOVERY DIODE 200ns SKB02N120 FAST RECOVERY DIODE 200ns 2a 15v 60w smps SKP02N120
Contextual Info: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

k02n120

Abstract: PG-TO-263-3-2 SKB02N120 k02n12
Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,

Contextual Info: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

K02N120

Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation  Short circuit withstand time – 10 s

K07N120

Abstract: SKW07N120 PG-TO-247-3-21
Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

k02n120

Abstract: 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs