7A SF Search Results

G3N60B

Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high

Contextual Info: FRS9240D, FRS9240R, FRS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735£i TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)

STGP7NB60H

Contextual Info: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

STGP7NB60H

Contextual Info: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

STGD7NB60H

Contextual Info: STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH IGBT TYPE STD7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat ) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

STGD7NB60H

Contextual Info: STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH IGBT TYPE STD7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

Contextual Info: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat ) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

TS PQ4 24

Abstract: 3885 pj 56 diode pj diode J78B fdk IDF
Contextual Info: <:113:/E0E< ?=@=5EFC9 <=;< BAH9C C9>5I `{-4cggkwc0e0ya :NKXYVNW Z Z Z Z Z Z Z Z Z Z w?B; *Edp vgijkgm w?B; *Edpggloij w?B; *Edpt-tfhffgffgokg 7A=> 7A@E57E 85E5 tEDJ79J 7HH7D=;C;DJ grb gt tEDJ79J H;I?IJ7D9; tE?B FEM;H ywggkwc0yp hkfC3q ywggkwc0p jffC3 gffC `7J gr l2uta

2SA733AP

Abstract: 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H
Contextual Info: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP

Green

Abstract: SMBJ11CA BAS70WT S1B40 UF5406T MTZJ10A SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA
Contextual Info: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP

Contextual Info: RF1K49211 HARRIS S E M I C O N D U C T O R 7A, 12V, 0.020ÌÌ, Logic Level, Single N-Channel Power MOSFET June 1997 Features Description • 7A, 12V The RF1K49211 Single N-Channel power MOSFET is man­ ufactured using an advanced MegaFET process. This pro­

54016

Abstract: HSc 7d
Contextual Info: <:113:/E0E< ?=@=5EFC9 <=;< BAH9C C9>5I :NKXYVNW Y Y Y Y Y Y Y Y Y Y x?B; *Eeq whjklhn G 8 9 x?B; *Eeqhhmpjk x?B; *Eequ-ugoggigiohjg 7A=> 7A@E57E 85E5 uEDJ79J 7HH7D=;C;DJ hsc hu uEDJ79J H;I?IJ7D9; uE?B FEM;H zxhhlxd0zq ilgC3r zxhhlxd0q kggC3 hggC `7J hs m2vua

Contextual Info: I 1/ V R R I 15 FRS230D, FRS230R, S E M I C O N D U C T O R 7A, 200V, 0.515 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 200V, RDS on = 0.515£2 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma

l4970

Abstract: L4977 TRANSISTOR UO 112 THOMSON ui35 L4974 40KHZ L4377 0d22B 7e2e 18KA
Contextual Info: • YTSTHB? Q O a S tiQ M L. S G S -T H O M S O N G " S S 'U - 3 1 L4977 3DE » S-THOMSON 7A SWITCHING REGULATOR ADVANCE DATA 7A OUTPUT CURRENT 5.1V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA­ TION INTERNAL CURRENT LIMITING

Contextual Info: MITSUBISHI Neh POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE FK7VS-12 OUTLINE DRAWING I q J w e Q w r V d s s . 600V Id . 7A

Pressure Sensor P10

Abstract: pressure sensor sp 13 SP300-16A sensonor sp 13 SP300-7 piezoresistive "Pressure Sensor" digital output pressure sensor sp 20 harsh environment PRESSURE SENSOR negative PRESSURE SENSOR SENSONOR
Contextual Info: DATASHEET SP300 PRESSURE SENSOR SERIES SP300-7 T , SP300-7A(T), SP300-16A SP300 Series Compensated Pressure Sensors With Embedded Microcontroller The SP300 Pressure Sensor series represents Sensonor Technologies’ most advanced pressure sensors. Based on

ASTM A123

Abstract: D2863-77 bussmann smd 5A fuse with solder leads FC5312 BUSS SFT 5A 125V BUSS SFT 10A FC-5312 buss sft buss sft 2A 125V
Contextual Info: Bussmann SMD TRON® Surface Mount Fuses SFT For .170” x .294” 4.32mm x 7.47mm Fuses R 12.5A 7A 10A AMPERE RATING 1A 1.5A 2A 2.5A 3A 3.5A 5A 10 250mA 375mA 500mA 750mA Time-Current Characteristic CurvesÐAverage Melt (Full Size Curves Available) Catalog Symbol:

Contextual Info: 19-0094; Rev 7a; 12/96 JV\S\YAJV\ M icroprocessor Supervisory Circuits The MAX691A/MAX693A/MAX800L/MAX800M micro­ processor pP supervisory circuits are pin-compatible upgrades to the MAX691, MAX693, and MAX695. They improve performance with 30pA supply current, 200ms

Contextual Info: HARRI S SEIHCOND SECTOR SfiE D HARRIS 43G2271 0045ÖGG Ô04 I HAS 2N7318D, 2N7318R 2N7318H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9240 D, R, H Radiation Hardened P-Channel Power MOSFETs December 1992 Features • 7A, -200V, RDS(on)» 0.720Q

Contextual Info: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H V CES VcE sat lc 60 0 V < 2.8 V 7 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW ON-VOLTAGE DROP (Vcesat) . . . . LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

G3N60B3

Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

Contextual Info: BUZ 73L Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds b ^DS on Package Ordering Code BUZ 73 L 200 V 7A 0.4 £2. TO-220 AB C67078-S1328-A2 Maximum Ratings Symbol Parameter Continuous drain current

Contextual Info: Philips Sem iconductors Product specification 7A. Q1flQ. Dual J-K positive edge triggered flip-flop with set and reset PIN CONFIGURATION DESCRIPTION The 74ALS109A is a dual positive edge-triggered JK-type flip-flop featuring individual J, K, clock, set, and reset inputs; also true and

Contextual Info: STW8NB80 N - CHANNEL 800V - 1 .2û - 7A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW8NB80 . . . . . 800 V R d S oii < 1.6 = a Id 7 A TYPICAL RDS(on) 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES